Member:Nakakubo

From 京大推進研

Jump to: navigation, search

中久保 義則 / Yoshinori Nakakubo

  • 学年:博士課程3年
  • 所属学会:応用物理学会, American Vacuum Society

学術論文

  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD03. doi: 10.1143/JJAP.50.08KD03. http://jjap.jsap.jp/link?JJAP/50/08KD03/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD04. doi: 10.1143/JJAP.50.08KD04. http://jjap.jsap.jp/link?JJAP/50/08KD04/
  • Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono, Masaki Minami, Fumikatsu Uesawa, and Tetsuya Tatsumi: "Structural and electrical characterization of HBr/O2 plasma damage to Si substrate", J. Vac. Sci. Technol. A 29(4) (Jun 2011) 041301. doi: 10.1116/1.3596606. http://link.aip.org/link/?JVA/29/041301/1
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
  • Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring", Jpn. J. Appl. Phys. 49 (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. 49 (2010) 056203. http://jjap.ipap.jp/link?JJAP/49/056203/
  • Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing", Thin Solid Films 518(13) (2010) 3469-3474. doi:10.1016/j.tsf.2009.11.042
  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", Thin Solid Films 518(13) (2010) 3481-3486. doi:10.1016/j.tsf.2009.11.044
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs", IEEE Electron Dev. Lett. 31(12) (Dec 2009) 1275-1277.  PDF KURENAI repository   doi:10.1109/LED.2009.2033726
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. doi:10.1109/LED.2009.2022347

著書

  • Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Chapter 8: Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", in Emerging Technologies and Circuits, eds. Amara Amara, Thomas Ea, and Marc Belleville. Lecture Notes in Electrical Engineering 66 (Springer, London, 2010) Part IV, pp. 107-120. ISBN 978-90-481-9378-3.