Publications/Journals

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Paper.png 学術論文

2022

  • Yoshihiro Sato, Satoshi Shibata, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami, Keiichiro Urabe, and Koji Eriguchi: "Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution," J. Vac. Sci. Technol. B 40, 062209 (2022). <doi: 10.1116/6.0002181>
  • Seiya Kito, Keiichiro Urabe, and Koji Eriguchi: "Multi-harmonic analysis in a floating harmonic probe method for diagnostics of electron energy and ion density in low-temperature plasmas", Japanese Journal of Applied Physics 61, 106002 (2022). <doi: 10.35848/1347-4065/ac87e1>
  • Yoshihiro Sato, Satoshi Shibata, Takayoshi Yamada, Kazuko Nishimura, Masayuku Yamasaki, Masashi Murakami, Keiichiro Urabe, and Koji Eriguchi: "Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage," IEEE Journal of the Electron Devices Society 10, 769 (2022). <doi: 10.1109/JEDS.2022.3176321>
  • Takayuki Matsuda, Takashi Hamano, Yuya Asamoto, Masao Noma, Michiru Yamashita, Shigehiko Hasegawa, Keiichiro Urabe, and Koji Eriguchi: “Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique,” Jpn. J. Appl. Phys. 61, Sl1014 (2022). <doi:10.35848/1347-4065/ac5d16>
  • Tomohiro Kuyama, Keiichiro Urabe, and Koji Eriguchi, "Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis," Journal of Applied Physics 131, 133302 (2022).<doi:10.1063/5.0085042>
  • Takashi Hamano, Takayuki Matsuda, Yuya Asamoto, Masao Noma, Shigehiko Hasegawa, Michiru Yamashita, Keiichiro Urabe, and Koji Eriguchi, “Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method,” Appl. Phys. Lett. 120, 031904 (2022). <doi:10.1063/5.0077147>

2021

  • Masahito Mori, Shoki Irie, Yugo Osano, Koji Eriguchi, and Kouichi Ono, "Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas," J. Vac. Sci. Technol. A 39, 043002 (2021).
  • Koji Eriguchi, "Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage," Jpn. J. Appl. Phys. 60, 040101 (2021). [INVITED REVIEW]<doi:10.35848/1347-4065/abe47c>

2020

  • Tomohiro Kuyama, Keiichiro Urabe, Masanaga Fukasawa, Tetsuya Tatsumi, and Koji Eriguchi, "Characterization of dynamic behaviors of defects in Si substrates created by H2 plasma using conductance method," Jpn. J. Appl. Phys. 59, SJJC02 (2020), <doi:10.35848/1347-4065/ab8280>
  • Florent P. Sainct, Keiichiro Urabe, Erwan Pannier, Deanna A. Lacoste, and Christophe O. Laux: “Electron number density measurements in nanosecond repetitively pulsed discharges in water vapor at atmospheric pressure," Plasma Sources Sci. Technol. 29, 025018 (2020). <doi: 10.1088/1361-6595/ab681b>
  • Tsuyoshi Akiyama, Michael A. Zeeland, Thomas N. Carlstrom, Rejean L. Boivin, Kai J. Brunner, Jens Knauer, Ryo Yasuhara, Kenji Tanaka, Hai-Qing Liu, Yan Zhou, Naoyuki Oyama, Antoine Sirinelli, Keiichiro Urabe, and Naoki Shirai: “Recent progress on dispersion interferometers for nuclear fusion and low-temperature plasmas," J. Instrum. 126, C01004 (2020). <doi: 10.1088/1748-0221/15/01/C01004>
  • Yoshihiro Sato, Satoshi Shibata, Keiichiro Urabe, and Koji Eriguchi: “Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions,” J. Vac. Sci. Technol. B 38, 012205 (2020). <picked up at a newsletter [Beneath the AVS Surface], Feb. 2020> <doi: 10.1116/1.5126344>

2019

  • Taro Ikeda, Akira Tanihara, Nobuhiko Yamamoto, and Koji Eriguchi: “Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma," J. Appl. Phys. 126, 083304 (2019). <doi:10.1063/1.5083937>
  • Takashi Hamano, Keiichiro Urabe, and Koji Eriguchi: “Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance-voltage characteristics,” J. Phys. D: Appl. Phys. 52, 455102 (2019). <doi: 10.1088/1361-6463/ab3550>
  • Tomoya Higuchi, Masao Noma, Michiru Yamashita, Keiichiro Urabe, Shigehiko Hasegawa, and Koji Eriguchi, "Characterization of surface modification mechanisms for boron nitride films under plasma exposure," Surface and Coatings Technol. 377, 124854 (2019). <doi: 10.1016/j.surfcoat.2019.07.071>
  • Masahito Mori, Yugo Osano, Shoki Irie, Koji Eriguchi, and Kouichi Ono, "Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas," J. Vac. Sci. Technol. A 37, 051301 (2019). <doi:10.1116/1.5091673>
  • Koji Eriguchi, Takashi Hamano, and Keiichiro Urabe, "Improvement of the plasma‐induced defect generation model in Si substrates and the optimization design framework," Plasma Process. Polym. 16, 1900058 (2019). <doi:10.1002/ppap.201900058>
  • Takeshi Takahashi, Daisuke Mori, Tetsuo Kawanabe, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Microplasma thruster powered by X-band microwaves," J. Appl. Phys. 125, 083301 (2019). <doi:10.1063/1.5054790>
  • Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe, and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," J. Vac. Sci. Technol. A 37, 011304 (2019). <doi:10.1116/1.5048027>
  • Hitoshi Muneoka, Shohei Himeno, Keiichiro Urabe, Sven Stauss, Motoyoshi Baba, Tohru Suemoto, and Kazuo Terashima, "Dynamics of cavitation bubbles formed by pulsed-laser ablation plasmas near the critical point of CO2," J. Phys. D: Appl. Phys. 52, 025201 (2019). <doi:10.1088/1361-6463/aae44a>

2018

  • Takumi Hatsuse, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection," J. Appl. Phys. 124, 143301 (2018). <doi:10.1063/1.5041846>
  • Tomohiro Kuyama and Koji Eriguchi, "Optical and electrical characterization methods of plasma-induced damage in silicon nitride films," Jpn. J. Appl. Phys. 57, 06JD03 (2018). <doi:10.7567/JJAP.57.06JD03>
  • Yuta Yoshikawa and Koji Eriguchi, "First-principles predictions of electronic structure change in plasma-damaged materials," Jpn. J. Appl. Phys. 57, 06JD04 (2018). <doi:10.7567/JJAP.57.06JD04>
  • Takashi Hamano and Koji Eriguchi, "Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas," Jpn. J. Appl. Phys. 57, 06JD02 (2018). <doi:10.7567/JJAP.57.06JD02>
  • Nobuya Nakazaki, Haruka Matsumoto, Soma Sonobe, Takumi Hatsuse, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Ripple formation on Si surfaces during plasma etching in Cl2," AIP Adv. 8, 055027 (2018). <doi:10.1063/1.5017070>

2017

  • Koji Eriguchi, "Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage," J. Phys. D: Appl. Phys. 50, No. 33, pp.333001, (2017), <doi:10.1088/1361-6463/aa7523>
  • Kouichi Ono, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, and Koji Eriguchi, "Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation,” J. Phys. D: Appl. Phys. 50, 414001 (2017), <doi: 10.1088/1361-6463/aa8523>
  • Koji Eriguchi and Yukimasa Okada, "Electrical characterization of carrier trapping behavior of defects created by plasma exposures," J. Phys. D: Appl. Phys. 50, No. 26, 26LT01, (2017), <doi:10.1088/1361-6463/aa731a>
  • Yukimasa Okada, Kouichi Ono and Koji Eriguchi, "An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement," Jpn. J. Appl. Phys. 56, No. 6S2, 06HD04, (2017), <doi:10.7567/JJAP.56.06HD04>
  • Koji Eriguchi, "Defect generation in electronic devices under plasma exposure: Plasma-induced damage," Jpn. J. Appl. Phys. 56, No. 6S2, 06HA01, (2017), <doi:10.7567/JJAP.56.06HA01>
  • Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing," Jpn. J. Appl. Phys. 56, No. 6S2, 06HD03, (2017), <doi:10.7567/JJAP.56.06HD03>
  • Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films," Jpn. J. Appl. Phys. 56, No. 6S2, 06HD01, (2017), <doi:10.7567/JJAP.56.06HD01>
  • Z. Wei and K. Eriguchi, "Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation," IEEE Trans. Electron Devices 64, No. 5, 2201-2206 (2017), <doi: 10.1109/ted.2017.2681104>

2016

  • Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Surface smoothing during plasma etching of Si in Cl2," Appl. Phys. Lett. 109, 204101 (2016), <doi: 10.1063/1.4967474>
  • Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono,"Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring," Jpn. J. Appl. Phys. 55, No. 6S2, 06HB04 (2016),<doi:10.7567/JJAP.55.06HB04>

2015

  • Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals," J. Appl. Phys. 118, 233304 (2015).  PDF KURENAI repository   doi:10.1063/1.4937449. http://dx.doi.org/10.1063/1.4937449
    Publisher's Note: J. Appl. Phys. 119, 059901 (2016). doi:10.1063/1.4941034. http://dx.doi.org/10.1063/1.4941034
  • Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2," Appl. Phys. Express. 8, 066201 (2015). <APEX Spotlights> doi:10.7567/APEX.8.066201. http://iopscience.iop.org/1882-0786/8/6/066201
  • Takaaki Iwai, Koji Eriguchi, Shohei Yamauchi, Naotaka Noro, Junichi Kitagawa, and Kouichi Ono: "Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate," J. Vac. Sci. Technol. A 33, 061403 (2015). doi:10.1116/1.4927128. http://dx.doi.org/10.1116/1.4927128
  • Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate," ECS Journal of Solid State Science and Technology, 4(6), N5077-N5083 (2015). doi:10.1149/2.0121506jss.
  • Koji Eriguchi and Kouichi Ono: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability," Microelectronics Reliability 55, 1464-1470 (2015).

2014

2012

  • K. Eriguchi, M. Kamei, Y. Takao, and K. Ono: "High-k MOSFET performance degradation by plasma process-induced charging damage," 2012 IEEE International Integrated Reliability Workshop Final Report, pp. 80-84 (2012).
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effect of capacitive coupling in a miniature inductively coupled plasma source," J. Appl. Phys. 112(9) (Nov 2012) 093306. <JAP Research Highlights>  PDF KURENAI repository   doi: 10.1063/1.4764333. http://link.aip.org/link/?JAP/112/093306
  • Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence,” Jpn. J. Appl. Phys. 51 (Aug 2012) 08HC01. doi: 10.1143/JJAP.51.08HC01. http://jjap.jsap.jp/link?JJAP/51/08HC01/

2011

2010

  • Yoshinori Takao, Naoki Kusaba, Koji Eriguchi, and Kouichi Ono: "Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source," J. Appl. Phys. 108(9) (Nov 2010) 093309.  PDF KURENAI repository   doi: 10.1063/1.3506536. http://link.aip.org/link/?JAP/108/093309/
  • Takumi Saegusa, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires," Jpn. J. Appl. Phys. 49 (2010) 095204. doi:10.1143/JJAP.49.095204. http://jjap.ipap.jp/link?JJAP/49/095204/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors," Jpn. J. Appl. Phys. 49 (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
  • Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring," Jpn. J. Appl. Phys. 49 (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
  • Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity," Jpn. J. Appl. Phys. 49 (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates," Jpn. J. Appl. Phys. 49 (2010) 056203. <JJAP Spotlights> http://jjap.ipap.jp/link?JJAP/49/056203/
  • Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, and Kouichi Ono: "Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films," J. Appl. Phys. 107(1) (2010) 014518.  PDF KURENAI repository   http://link.aip.org/link/JAPIAU/v107/i1/p014518/s1
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors," Jpn. J. Appl. Phys. 49 (2010) 04DA18. http://jjap.ipap.jp/link?JJAP/49/04DA18/
  • Kouichi Ono, Hiroaki Ohta, and Koji Eriguchi: "Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study," Thin Solid Films 518(13) (2010) 3461-3468. doi:10.1016/j.tsf.2009.11.030
  • Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing," Thin Solid Films 518(13) (2010) 3469-3474. doi:10.1016/j.tsf.2009.11.042
  • Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue," Thin Solid Films 518(13) (2010) 3475-3480. doi:10.1016/j.tsf.2009.11.043
  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis," Thin Solid Films 518(13) (2010) 3481-3486. doi:10.1016/j.tsf.2009.11.044

2009

  • Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of a Microwave-Excited Microplasma Thruster," Trans. Japan Soc. Aero. Space Sci., Space Technol. Japan 7 ists26 (Dec 2009) Pb_135. http://www.jstage.jst.go.jp/article/tstj/7/ists26/7_Pb_135/_article
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs," IEEE Electron Dev. Lett. 31(12) (Dec 2009) 1275-1277.  PDF KURENAI repository   doi:10.1109/LED.2009.2033726
  • Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology," Appl. Phys. Express 2 (Nov 2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/
  • Hiroshi Fukumoto, Koji Eriguchi, and Kouichi Ono: "Effects of Mask Pattern Geometry on Plasma Etching Profiles," Jpn. J. Appl. Phys. 48(9) (Sep 2009) 096001. http://jjap.ipap.jp/link?JJAP/48/096001/
  • Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono : "Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2," Plasma Sources Sci. Technol. 18(4) (Sep 2009) 045027. http://dx.doi.org/10.1088/0963-0252/18/4/045027
  • Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster," Phys. Plasmas 16(8) (Aug 2009) 083505.  PDF KURENAI repository   http://link.aip.org/link/?PHP/16/083505
  • Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical Study on Si Etching by Monatomic Br+/Cl+ Beams and Diatomic Br2+/Cl2+/HBr+ Beams," Jpn. J. Appl. Phys. 48(7) (Jul 2009) 070219. http://jjap.ipap.jp/link?JJAP/48/070219/
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation," IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. doi:10.1109/LED.2009.2022347
  • Hiroaki Ohta, Tatsuya Nagaoka, Koji Eriguchi, and Kouichi Ono: "An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations," Jpn. J. Appl. Phys. 48(2) (Feb 2009) 020225. http://jjap.ipap.jp/link?JJAP/48/020225/
  • Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+," J. Appl. Phys. 105(2) (Jan 2009) 023302.  PDF KURENAI repository   http://link.aip.org/link/?JAPIAU/105/023302/1
  • Keisuke Nakamura, Daisuke Hamada, Yoshinori Ueda, Koji Eriguchi, and Kouichi Ono: "Selective Etching of High-k Dielectric HfO2 Films over Si in BCl3-Containing Plasmas without rf Biasing," Appl. Phys. Express 2(1) (Jan 2009) 016503. http://apex.ipap.jp/link?APEX/2/016503/
  • Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, Hiroaki Ohta, and Kouichi Ono: "Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method," Appl. Phys. Lett. 94(1) (Jan 2009) 013507.  PDF KURENAI repository   http://link.aip.org/link/?APPLAB/94/013507/1

2008

  • Akira Iwakawa, Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics simulation of Si etching by off-normal Cl+ bombardment at high neutral-to-ion flux ratios," Jpn. J. Appl. Phys. 47(11) (Nov 2008) 8560-8564. https://iopscience.iop.org/article/10.1143/JJAP.47.8560/meta
  • Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow," J. Phys. D: Appl. Phys. 41(19) (Oct 2008) 194005. http://stacks.iop.org/0022-3727/41/194005
  • Hiroaki Ohta, Akira Iwakawa, Koji Eriguchi, and Kouichi Ono: "An Interatomic Potential Model for Molecular Dynamics Simulation of Silicon Etching by Br+-containing Plasmas," J. Appl. Phys. 104(7) (Oct 2008) 073302.  PDF KURENAI repository   http://link.aip.org/link/?JAPIAU/104/073302/1
  • Yoshinori Takao, Takeshi Takahashi, Koji Eriguchi and Kouichi Ono: "Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects," Pure Appl. Chem. 80(9) (Sep 2008) 2013-2023. http://www.iupac.org/publications/pac/80/9/2013/
  • Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers," Jpn. J. Appl. Phys. 47(4) (Aug 2008) 2446-2451. http://jjap.ipap.jp/link?JJAP/47/2446
  • Yuichi Setsuhara, Daisuke Tsukiyama, Kosuke Takenaka, and Koichi Ono: "Simulation-Aided Designing of Meter-Scale Large-Area Plasma Source with Multiple Low-Inductance Antenna Modules," Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6903-6906. http://jjap.ipap.jp/link?JJAP/47/6903
  • Yugo Osano and Kouichi Ono: "Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles," J. Vac. Sci. Technol. B 26(4) (Aug 2008) 1425-1439.  PDF KURENAI repository   http://dx.doi.org/10.1116/1.2958240
  • Akira Iwakawa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical investigation on the origin of microscopic surface roughness during Si etching by chemically reactive plasmas," Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6464-6466. https://iopscience.iop.org/article/10.1143/JJAP.47.6464
  • Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, and Kouichi Ono: "Estimation of defect generation probability in thin Si surface damaged layer during plasma processing," Thin Solid Films 516(19) (Aug 2008) 6604-6608. http://dx.doi.org/10.1016/j.tsf.2007.11.035
  • Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono : "Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics," Jpn. J. Appl. Phys. 47(4) (Apr 2008) 2369-2374. http://jjap.ipap.jp/link?JJAP/47/2369
  • Koji Eriguchi and Kouichi Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices," J. Phys. D: Appl. Phys. 41(2) (Jan 2008) 024002. http://dx.doi.org/10.1088/0022-3727/41/2/024002

2007

2006

  • Yoshinori Takao, Kouichi Ono, Kazuo Takahashi and Koji Eriguchi : "Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster," Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8235-8240.
  • Yugo Osano, Masahito Mori, Naoshi Itabashi, Kazuo Takahashi, Koji Eriguchi and Kouichi Ono : "A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl2/O2 Plasmas," Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8157-8162.