2019年8月29日 (木) 08:25時点における版

Arturo Donate

学術論文

2019

• Taro Ikeda1,Akira Tanihara, Nobuhiko Yamamoto, and Koji Eriguchi: “Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma", J. Appl. Phys. 126, 083304 (2019). <doi:10.1063/1.5083937>
• Takashi Hamano, Keiichiro Urabe, and Koji Eriguchi: “Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance-voltage characteristics”, Journal of Physics D: Applied Physics, Vol. 52, 455102 (2019). <doi: 10.1088/1361-6463/ab3550>
• Tomoya Higuchi, Masao Noma, Michiru Yamashita, Keiichiro Urabe, Shigehiko Hasegawa, and Koji Eriguchi, "Characterization of surface modification mechanisms for boron nitride films under plasma exposure", Surface and Coatings Technology, Vol. 377, 124854 (2019). <doi: 10.1016/j.surfcoat.2019.07.071>
• Masahito Mori, Yugo Osano, Shoki Irie, Koji Eriguchi, and Kouichi Ono, "Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas", J. Vac. Sci. Technol. A 37, 051301 (2019). <doi:10.1116/1.5091673>
• Koji Eriguchi, Takashi Hamano, and Keiichiro Urabe, "Improvement of the plasma‐induced defect generation model in Si substrates and the optimization design framework", Plasma Process. Polym. e1900058 (2019). <doi:10.1002/ppap.201900058>
• Takeshi Takahashi, Daisuke Mori, Tetsuo Kawanabe, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Microplasma thruster powered by X-band microwaves," J. Appl. Phys. 125, 083301 (2019). <doi:10.1063/1.5054790>
• Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe, and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate", J. Vac. Sci. Technol. A 37, 011304 (2019). <doi:10.1116/1.5048027>

2018

• Takumi Hatsuse, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection", Journal of Applied Physics 124, 143301 (2018), <doi:10.1063/1.5041846>
• Tomohiro Kuyama and Koji Eriguchi, "Optical and electrical characterization methods of plasma-induced damage in silicon nitride films", Japanese Journal of Applied Physics, Vol. 57, No. 6S2, 06JD03, (2018), <doi:10.7567/JJAP.57.06JD03>
• Yuta Yoshikawa and Koji Eriguchi, "First-principles predictions of electronic structure change in plasma-damaged materials", Japanese Journal of Applied Physics, Vol. 57, No. 6S2, 06JD04, (2018), <doi:10.7567/JJAP.57.06JD04>
• Takashi Hamano and Koji Eriguchi, "Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas", Japanese Journal of Applied Physics, Vol. 57, No. 6S2, 06JD02, (2018), <doi:10.7567/JJAP.57.06JD02>
• Nobuya Nakazaki, Haruka Matsumoto, Soma Sonobe, Takumi Hatsuse, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Ripple formation on Si surfaces during plasma etching in Cl2", AIP Adv. 8 (2018), pp. 055027. <doi:10.1063/1.5017070>

2017

• Koji Eriguchi, "Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage", Journal of Physics D: Applied Physics, Vol. 50, No. 33, pp.333001, (2017), <doi:10.1088/1361-6463/aa7523>
• Kouichi Ono, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, and Koji Eriguchi, "Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation”, J. Phys. D: Appl. Phys. 50, 414001 (2017), <doi: 10.1088/1361-6463/aa8523>
• Koji Eriguchi and Yukimasa Okada, "Electrical characterization of carrier trapping behavior of defects created by plasma exposures", Journal of Physics D: Applied Physics, Vol. 50, No. 26, 26LT01, (2017), <doi:10.1088/1361-6463/aa731a>
• Yukimasa Okada, Kouichi Ono and Koji Eriguchi, "An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD04, (2017), <doi:10.7567/JJAP.56.06HD04>
• Koji Eriguchi, "Defect generation in electronic devices under plasma exposure: Plasma-induced damage", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HA01, (2017), <doi:10.7567/JJAP.56.06HA01>
• Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD03, (2017), <doi:10.7567/JJAP.56.06HD03>
• Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD01, (2017), <doi:10.7567/JJAP.56.06HD01>
• Z. Wei and K. Eriguchi, "Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation", IEEE Transactions on Electron Devices, Vol. 64, No. 5, 2201-2206 (2017), <doi: 10.1109/ted.2017.2681104>

2016

• Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Surface smoothing during plasma etching of Si in Cl2", APPLIED PHYSICS LETTERS 109, 204101 (2016). <doi: 10.1063/1.4967474>
• Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono,"Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring",Japanese Journal of Applied Physics, Volume 55, Number 6S2,06HB04,May 2016,<doi:10.7567/JJAP.55.06HB04>

2015

• Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals", J. Appl. Phys. 118, 233304 (2015).   KURENAI repository   doi:10.1063/1.4937449. http://dx.doi.org/10.1063/1.4937449
  Publisher's Note: J. Appl. Phys. 119, 059901 (2016). doi:10.1063/1.4941034. http://dx.doi.org/10.1063/1.4941034
• Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2", Appl. Phys. Express. 8, 066201 (2015). <APEX Spotlights> doi:10.7567/APEX.8.066201. http://iopscience.iop.org/1882-0786/8/6/066201
• Takaaki Iwai, Koji Eriguchi, Shohei Yamauchi, Naotaka Noro, Junichi Kitagawa, and Kouichi Ono: "Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate", J. Vac. Sci. Technol. A 33, 061403 (2015). doi:10.1116/1.4927128. http://dx.doi.org/10.1116/1.4927128
• Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate", ECS Journal of Solid State Science and Technology, 4(6), N5077-N5083 (2015). doi:10.1149/2.0121506jss.
• Koji Eriguchi and Kouichi Ono: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability", Microelectronics Reliability 55, 1464-1470 (2015).

2014

• Yoshinori Takao, Hiroyuki Koizumi, Kamiya Komurasaki, Koji Eriguchi, and Kouichi Ono: “Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster", Plasma Sources Sci. Technol. 23 (Dec 2014) 064004. doi:10.1088/0963-0252/23/6/064004. http://iopscience.iop.org/0963-0252/23/6/064004
• Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products", J. Appl. Phys. 116 (Dec 2014) 223302.   KURENAI repository   doi:10.1063/1.4903956. http://scitation.aip.org/content/aip/journal/jap/116/22/10.1063/1.4903956
• Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas", Jpn. J. Appl. Phys. 53 (May 2014) 056201. <JJAP Spotlights> doi:10.7567/JJAP.53.056201. http://iopscience.iop.org/1347-4065/53/5/056201/
• Hirotaka Tsuda, Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments", J. Vac. Sci. Technol. B 32 (May 2014) 031212.  KURENAI repository  doi: 10.1116/1.4874309. http://scitation.aip.org/content/avs/journal/jvstb/32/3/10.1116/1.4874309
• Yoshinori Takao, Masataka Sakamoto, Koji Eriguchi, and Kouichi Ono: "Investigation of Plasma Characteristics and Ion Beam Extraction for a Micro RF Ion Thruster", Trans. JSASS Aerospace Tech. Japan 12 ists29 (Dec 2014) Pb_13-Pb_18. doi:10.2322/tastj.12.Pb_13. https://www.jstage.jst.go.jp/article/tastj/12/ists29/12_Pb_13/_article
• Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao and Kouichi Ono:"Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DE02.doi:10.7567/JJAP.53.03DE02. http://iopscience.iop.org/1347-4065/53/3S2/03DE02
• Masayuki Kamei, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2 and high-k gate dielectrics", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DF02. doi:10.7567/JJAP.53.03DF02. http://iopscience.iop.org/1347-4065/53/3S2/03DF02
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DF01. doi:10.7567/JJAP.53.03DF01. http://iopscience.iop.org/1347-4065/53/3S2/03DF01
• T. Okumura, K. Eriguchi, M. Saitoh, and H. Kawaura, "Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DG01.
• Masao Noma, Koji Eriguchi, Yoshinori Takao, Nobuyuki Terayama, and Kouichi Ono:"Structural, mechanical, and electrical properties of cubic boron nitride thin films deposited by magnetically enhanced plasma ion plating method", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DB02. doi:10.7567/JJAP.53.03DB02. http://iopscience.iop.org/1347-4065/53/3S2/03DB02

2012

• K. Eriguchi, M. Kamei, Y. Takao, and K. Ono: "High-k MOSFET performance degradation by plasma process-induced charging damage" 2012 IEEE International Integrated Reliability Workshop Final Report, pp. 80-84 (2012).
• Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effect of capacitive coupling in a miniature inductively coupled plasma source", J. Appl. Phys. 112(9) (Nov 2012) 093306. <JAP Research Highlights>   KURENAI repository   doi: 10.1063/1.4764333. http://link.aip.org/link/?JAP/112/093306
• Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence”, Jpn. J. Appl. Phys. 51 (Aug 2012) 08HC01. doi: 10.1143/JJAP.51.08HC01. http://jjap.jsap.jp/link?JJAP/51/08HC01/

2011

• Koji Eriguchi, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor", Jpn. J. Appl. Phys. 50(10) (Oct 2011) 10PG02. doi: 10.1143/JJAP.50.10PG02. http://jjap.jsap.jp/link?JJAP/50/10PG02/
• Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KB02. doi: 10.1143/JJAP.50.08KB02. http://jjap.jsap.jp/link?JJAP/50/08KB02/
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD03. doi: 10.1143/JJAP.50.08KD03. http://jjap.jsap.jp/link?JJAP/50/08KD03/
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD04. doi: 10.1143/JJAP.50.08KD04. http://jjap.jsap.jp/link?JJAP/50/08KD04/
• Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Comparative Study of Plasma-Charging Damage in High-k Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD05. doi: 10.1143/JJAP.50.08KD05. http://jjap.jsap.jp/link?JJAP/50/08KD05/
• Hirotaka Tsuda, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08JE06. doi: 10.1143/JJAP.50.08JE06. http://jjap.jsap.jp/link?JJAP/50/08JE06/
• Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08JE04. doi: 10.1143/JJAP.50.08JE04. http://jjap.jsap.jp/link?JJAP/50/08JE04/
• Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08JC02. doi: 10.1143/JJAP.50.08JC02. http://jjap.jsap.jp/link?JJAP/50/08JC02/
• Takeshi Takahashi, Yoshinori Takao, Yugo Ichida, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster with helium and hydrogen propellants", Phys. Plasmas 18(6) (Jun 2011) 063505.   KURENAI repository   doi: 10.1063/1.3596539. http://link.aip.org/link/?PHP/18/063505
• Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices", J. Vac. Sci. Technol. A 29(4) (Jun 2011) 041303.   KURENAI repository   doi: 10.1116/1.3598382. http://link.aip.org/link/?JVA/29/041303/1
• Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono, Masaki Minami, Fumikatsu Uesawa, and Tetsuya Tatsumi: "Structural and electrical characterization of HBr/O2 plasma damage to Si substrate", J. Vac. Sci. Technol. A 29(4) (Jun 2011) 041301. doi: 10.1116/1.3596606. http://link.aip.org/link/?JVA/29/041301/1
• Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching", AIP Conf. Proc. 1333 (May 2011) 1051.   KURENAI repository   doi: 10.1063/1.3562784. http://link.aip.org/link/?APCPCS/1333/1051/1

2010

• Yoshinori Takao, Naoki Kusaba, Koji Eriguchi, and Kouichi Ono: "Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source", J. Appl. Phys. 108(9) (Nov 2010) 093309.   KURENAI repository   doi: 10.1063/1.3506536. http://link.aip.org/link/?JAP/108/093309/
• Takumi Saegusa, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires", Jpn. J. Appl. Phys. 49 (2010) 095204. doi:10.1143/JJAP.49.095204. http://jjap.ipap.jp/link?JJAP/49/095204/
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
• Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring", Jpn. J. Appl. Phys. 49 (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
• Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity", Jpn. J. Appl. Phys. 49 (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. 49 (2010) 056203. <JJAP Spotlights> http://jjap.ipap.jp/link?JJAP/49/056203/
• Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, and Kouichi Ono: "Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films", J. Appl. Phys. 107(1) (2010) 014518.   KURENAI repository   http://link.aip.org/link/JAPIAU/v107/i1/p014518/s1
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 04DA18. http://jjap.ipap.jp/link?JJAP/49/04DA18/
• Kouichi Ono, Hiroaki Ohta, and Koji Eriguchi: "Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study", Thin Solid Films 518(13) (2010) 3461-3468. doi:10.1016/j.tsf.2009.11.030
• Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing", Thin Solid Films 518(13) (2010) 3469-3474. doi:10.1016/j.tsf.2009.11.042
• Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue", Thin Solid Films 518(13) (2010) 3475-3480. doi:10.1016/j.tsf.2009.11.043
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", Thin Solid Films 518(13) (2010) 3481-3486. doi:10.1016/j.tsf.2009.11.044

2009

• Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of a Microwave-Excited Microplasma Thruster", Trans. Japan Soc. Aero. Space Sci., Space Technol. Japan 7 ists26 (Dec 2009) Pb_135. http://www.jstage.jst.go.jp/article/tstj/7/ists26/7_Pb_135/_article
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs", IEEE Electron Dev. Lett. 31(12) (Dec 2009) 1275-1277.   KURENAI repository   doi:10.1109/LED.2009.2033726
• Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology", Appl. Phys. Express 2 (Nov 2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/
• Hiroshi Fukumoto, Koji Eriguchi, and Kouichi Ono: "Effects of Mask Pattern Geometry on Plasma Etching Profiles", Jpn. J. Appl. Phys. 48(9) (Sep 2009) 096001. http://jjap.ipap.jp/link?JJAP/48/096001/
• Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono : "Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄ plasma etching of SiO₂", Plasma Sources Sci. Technol. 18(4) (Sep 2009) 045027. http://dx.doi.org/10.1088/0963-0252/18/4/045027
• Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster", Phys. Plasmas 16(8) (Aug 2009) 083505.   KURENAI repository   http://link.aip.org/link/?PHP/16/083505
• Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical Study on Si Etching by Monatomic Br⁺/Cl⁺ Beams and Diatomic Br₂⁺/Cl₂⁺/HBr⁺ Beams", Jpn. J. Appl. Phys. 48(7) (Jul 2009) 070219. http://jjap.ipap.jp/link?JJAP/48/070219/
• Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. doi:10.1109/LED.2009.2022347
• Hiroaki Ohta, Tatsuya Nagaoka, Koji Eriguchi, and Kouichi Ono: "An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations", Jpn. J. Appl. Phys. 48(2) (Feb 2009) 020225. http://jjap.ipap.jp/link?JJAP/48/020225/
• Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr⁺", J. Appl. Phys. 105(2) (Jan 2009) 023302.   KURENAI repository   http://link.aip.org/link/?JAPIAU/105/023302/1
• Keisuke Nakamura, Daisuke Hamada, Yoshinori Ueda, Koji Eriguchi, and Kouichi Ono: "Selective Etching of High-k Dielectric HfO₂ Films over Si in BCl₃-Containing Plasmas without rf Biasing", Appl. Phys. Express 2(1) (Jan 2009) 016503. http://apex.ipap.jp/link?APEX/2/016503/
• Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, Hiroaki Ohta, and Kouichi Ono: "Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method", Appl. Phys. Lett. 94(1) (Jan 2009) 013507.   KURENAI repository   http://link.aip.org/link/?APPLAB/94/013507/1

2008

• Akira Iwakawa, Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics simulation of Si etching by off-normal Cl⁺ bombardment at high neutral-to-ion flux ratios", Jpn. J. Appl. Phys. 47(11) (Nov 2008) 8560-8564. https://iopscience.iop.org/article/10.1143/JJAP.47.8560/meta
• Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow", J. Phys. D: Appl. Phys. 41(19) (Oct 2008) 194005. http://stacks.iop.org/0022-3727/41/194005
• Hiroaki Ohta, Akira Iwakawa, Koji Eriguchi, and Kouichi Ono: "An Interatomic Potential Model for Molecular Dynamics Simulation of Silicon Etching by Br⁺-containing Plasmas", J. Appl. Phys. 104(7) (Oct 2008) 073302.   KURENAI repository   http://link.aip.org/link/?JAPIAU/104/073302/1
• Yoshinori Takao, Takeshi Takahashi, Koji Eriguchi and Kouichi Ono: "Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects", Pure Appl. Chem. 80(9) (Sep 2008) 2013-2023. http://www.iupac.org/publications/pac/80/9/2013/
• Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers ", Jpn. J. Appl. Phys. 47(4) (Aug 2008) 2446-2451. http://jjap.ipap.jp/link?JJAP/47/2446
• Yuichi Setsuhara, Daisuke Tsukiyama, Kosuke Takenaka, and Koichi Ono: "Simulation-Aided Designing of Meter-Scale Large-Area Plasma Source with Multiple Low-Inductance Antenna Modules", Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6903-6906. http://jjap.ipap.jp/link?JJAP/47/6903
• Yugo Osano and Kouichi Ono: "Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles", J. Vac. Sci. Technol. B 26(4) (Aug 2008) 1425-1439.   KURENAI repository   http://dx.doi.org/10.1116/1.2958240
• Akira Iwakawa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical investigation on the origin of microscopic surface roughness during Si etching by chemically reactive plasmas", Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6464-6466. https://iopscience.iop.org/article/10.1143/JJAP.47.6464
• Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, and Kouichi Ono: "Estimation of defect generation probability in thin Si surface damaged layer during plasma processing", Thin Solid Films 516(19) (Aug 2008) 6604-6608. http://dx.doi.org/10.1016/j.tsf.2007.11.035
• Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono : "Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics", Jpn. J. Appl. Phys. 47(4) (Apr 2008) 2369-2374. http://jjap.ipap.jp/link?JJAP/47/2369
• Koji Eriguchi and Kouichi Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices", J. Phys. D: Appl. Phys. 41(2) (Jan 2008) 024002. http://dx.doi.org/10.1088/0022-3727/41/2/024002

2007

• Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis", J. Appl. Phys. 101(12) (Jun 2007) 123307.   KURENAI repository   http://link.aip.org/link/?JAPIAU/101/123307/1

2006

• Yoshinori Takao, Kouichi Ono, Kazuo Takahashi and Koji Eriguchi : "Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8235-8240.
• Yugo Osano, Masahito Mori, Naoshi Itabashi, Kazuo Takahashi, Koji Eriguchi and Kouichi Ono : "A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl₂/O₂ Plasmas", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8157-8162.
• Kosuke Takenaka, Yuichi Setsuhara, Kazuaki Nishisaka, Akinori Ebe, Shinya Sugiura, Kazuo Takahashi, and Koichi Ono: "Characterization of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Units", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8046-8049.
• Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, and Kouichi Ono: "Plasma etching of high-k and metal gate materials", Vacuum 80(7) (May 2006) 761-767.
• Yoshinori Takao, Kouichi Ono, Kazuo Takahashi, and Yuichi Setsuhara: "Microwave-sustained miniature plasmas for an ultra small thruster", Thin Solid Films 506-507 (May 2006) 592-596.
• H. Kousaka, K. Ono, N. Umehara, I. Sawada, and K. Ishibashi: "Plasma distribution in a planar-type surface wave-excited plasma source", Thin Solid Films 506-507 (May 2006) 503-507.
• Kazuo Takahashi and Kouichi Ono: "Selective etching of high-k HfO₂ films over Si in hydrogen-added fluorocarbon (CF₄/Ar/H₂ and C₄F₈/Ar/H₂) plasmas", J. Vac. Sci. Technol. A 24(3) (May 2006) 437-443.   KURENAI repository  
• Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, Kazuo Takahashi, Kouichi Ono, Masanori Oosawa, Satoshi Hasaka, and Minoru Inoue: "Etching of High-k Dielectric HfO₂ Films in BCl₃-Containing Plasmas Enhanced with O₂ Addition", Jpn. J. Appl. Phys. 45(10) (Mar 2006) L297-L300.
• Yoshinori Takao and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited plasmas: a numerical design consideration", Plasma Sources Sci. Technol. 15(2) (Mar 2006) 211-227.