Member:Tsuda
京大推進研
（版間での差分）
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= 津田 博隆 / Hirotaka Tsuda = | = 津田 博隆 / Hirotaka Tsuda = | ||
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| + | 原子スケール微細加工に向けたプラズマ表面相互作用と加工形状制御に関する研究 | ||
| + | モンテカルロ法および分子動力学法を用いたSiエッチング形状進展シミュレーターの開発 | ||
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*学年：博士課程1年 | *学年：博士課程1年 | ||
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== Journal articles == | == Journal articles == | ||
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*Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity", Jpn. J. Appl. Phys. '''49''' (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/ | *Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity", Jpn. J. Appl. Phys. '''49''' (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/ | ||
*Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue", Thin Solid Films '''518''' (2010) 3475-3480. [[doi:10.1016/j.tsf.2009.11.043]] | *Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue", Thin Solid Films '''518''' (2010) 3475-3480. [[doi:10.1016/j.tsf.2009.11.043]] | ||
*Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology", Appl. Phys. Express '''2''' (2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/ | *Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology", Appl. Phys. Express '''2''' (2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/ | ||
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| + | == International conferences == | ||
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2011年5月23日 (月) 12:55時点における版
目次 |
津田 博隆 / Hirotaka Tsuda
原子スケール微細加工に向けたプラズマ表面相互作用と加工形状制御に関する研究 モンテカルロ法および分子動力学法を用いたSiエッチング形状進展シミュレーターの開発
- 学年：博士課程1年
- 所属学会：応用物理学会
Journal articles
First author
- Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity", Jpn. J. Appl. Phys. 49 (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
- Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue", Thin Solid Films 518 (2010) 3475-3480. doi:10.1016/j.tsf.2009.11.043
- Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology", Appl. Phys. Express 2 (2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/