Member:Matsuda

京大推進研

2011年1月7日 (金) 15:46時点におけるMatsuda (トーク | 投稿記録)による版
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松田朝彦 (Asahiko Matsuda)

目次

プラズマによる半導体材料のエッチングの際に、固体表面に生じるプラズマダメージの測定・解析手法について研究しています。 プラズマに曝露したSiウエハ表面のダメージ層を、光の反射を使って測定する手法の高精度化・高感度化に取り組んでいます。実験・測定を主体とし、時に数値シミュレーション（古典的分子動力学法）を併用しております。

  • 学年：博士後期課程1年
  • メール：asahikoCinnamonroll.pngphys.mbox.media.kyoto-u.ac.jp
  • 所属学会：応用物理学会
  • 研究室内役職：HP委員。このサイトの管理を担当しています。

略歴

  • 2008年3月　京都大学 工学部 物理工学科（宇宙基礎工学コース）卒業
  • 2010年3月　京都大学 大学院 工学研究科 航空宇宙工学専攻 修士課程 修了
  • 2010年4月　同　博士後期課程　進学

趣味・特技

  • Wikipediaに記事を投稿すること
  • アメリカ英語とイギリス英語とオーストラリア英語の喋り分けができる
  • もっと運動しなくてはいけないと思っている

Journal papers

First author

  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", Thin Solid Films 518 (Apr 2010) 3481-3486. http://dx.doi.org/10.1016/j.tsf.2009.11.044

Co-authored

  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. 49 (2010) 056203. http://jjap.ipap.jp/link?JJAP/49/056203/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs", IEEE Electron Dev. Lett. 31(12) (Dec 2009) 1275-1277. http://hdl.handle.net/2433/89515
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. http://dx.doi.org/10.1109/LED.2009.2022347

International Conference Presentations

First author

  • Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-28. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 346-347.
  • Asahiko Matsuda, Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 97-100.
  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Ueda, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-13. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 358-359.

Co-authored

  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-24. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 338-339.
  • Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 3-3. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 125-126.
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 9-4. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268.
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 101-104.
  • K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, K. Ishikawa, M. Yoshimaru, and K. Ono: "A New Framework for Performance Prediction of Advanced MOSFETs with Plasma-Induced Recess Structure and Latent Defect Site", IEEE International Electron Devices Meeting (IEDM), 2008, December 15-17, 2008, San Francisco, CA, USA. 2008 IEDM Technical Digest, 2008, pp. 1-4.
  • Y. Nakakubo, A. Matsuda, Y. Ueda, H. Ohta, K. Eriguchi, and K. Ono: "Clarification of Surface and Interface Structures exposed to Inductively Coupled Plasma with Various Superposed Bias Frequencies and Its Implication in Plasma Damage Control", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS1-WeM4 .
  • Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, K. Eriguchi and K. Ono: "Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 101-104.

Domestic Conference Presentations

（まとめ中）

本サイト内の記事

Links

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