Member:Satoh
京大推進研
（版間での差分）
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*博士3年 | *博士3年 | ||
*社会人D | *社会人D | ||
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| + | == 投稿論文 / Journal article == | ||
| + | # '''Yoshihiro Sato''', Satoshi Shibata, Keiichiro Urabe and Koji Eriguchi, "Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions," Journal of Vacuum Science & Technology B '''38''', 012205 (2020).<[[doi:10.1116/1.5126344]]> | ||
| + | # '''Yoshihiro Sato''', Satoshi Shibata, Akira Uedono, Keiichiro Urabe and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," Journal of Vacuum Science & Technology A '''37''', 011304 (2019). <[doi:10.1116/1.5048027]]> | ||
2021年9月21日 (火) 10:26時点における版
佐藤 好弘 (Yoshihiro Sato)
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- 博士3年
- 社会人D
投稿論文 / Journal article
- Yoshihiro Sato, Satoshi Shibata, Keiichiro Urabe and Koji Eriguchi, "Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions," Journal of Vacuum Science & Technology B 38, 012205 (2020).<doi:10.1116/1.5126344>
- Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," Journal of Vacuum Science & Technology A 37, 011304 (2019). <[doi:10.1116/1.5048027]]>