Member:Satoh
京大推進研
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#'''Yoshihiro Sato''', Satoshi Shibata, Keiichiro Urabe and Koji Eriguchi, "Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions," Journal of Vacuum Science & Technology B '''38''', 012205 (2020).<[[doi:10.1116/1.5126344]]> <br>'''[http://campaign.r20.constantcontact.com/render?m=1101176060676&ca=569cd11f-3b79-4732-a21b-36c451c21628#LETTER.BLOCK659/ Beneath the AVS Surface Highlighted Paper]''' | #'''Yoshihiro Sato''', Satoshi Shibata, Keiichiro Urabe and Koji Eriguchi, "Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions," Journal of Vacuum Science & Technology B '''38''', 012205 (2020).<[[doi:10.1116/1.5126344]]> <br>'''[http://campaign.r20.constantcontact.com/render?m=1101176060676&ca=569cd11f-3b79-4732-a21b-36c451c21628#LETTER.BLOCK659/ Beneath the AVS Surface Highlighted Paper]''' | ||
# '''Yoshihiro Sato''', Satoshi Shibata, Akira Uedono, Keiichiro Urabe and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," Journal of Vacuum Science & Technology A '''37''', 011304 (2019). <[[doi:10.1116/1.5048027]]> | # '''Yoshihiro Sato''', Satoshi Shibata, Akira Uedono, Keiichiro Urabe and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," Journal of Vacuum Science & Technology A '''37''', 011304 (2019). <[[doi:10.1116/1.5048027]]> | ||
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+ | == 招待講演 / Invited talks == | ||
+ | #'''[プラズマエレクトロニクス賞受賞記念講演]''' 佐藤 好弘 ,柴田 聡,占部 継一郎,江利口浩二:「pn 接合構造を用いたシリコン基板へのプラズマ誘起ダメージの評価」,[https://meeting.jsap.or.jp/jsap2021a/ 第82回応用物理学会秋季学術講演会],2021年9月10日~13日,オンライン開催,10p-S301-2.. |
2021年9月21日 (火) 10:39時点における版
佐藤 好弘 (Yoshihiro Sato)
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- 博士3年
- 社会人D
受賞 / Award
- 第19回プラズマエレクトロニクス賞, 2021年3月.
投稿論文 / Journal article
- Yoshihiro Sato, Satoshi Shibata, Keiichiro Urabe and Koji Eriguchi, "Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions," Journal of Vacuum Science & Technology B 38, 012205 (2020).<doi:10.1116/1.5126344>
Beneath the AVS Surface Highlighted Paper - Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," Journal of Vacuum Science & Technology A 37, 011304 (2019). <doi:10.1116/1.5048027>
招待講演 / Invited talks
- [プラズマエレクトロニクス賞受賞記念講演] 佐藤 好弘 ,柴田 聡,占部 継一郎,江利口浩二:「pn 接合構造を用いたシリコン基板へのプラズマ誘起ダメージの評価」,第82回応用物理学会秋季学術講演会,2021年9月10日~13日,オンライン開催,10p-S301-2..