2021年9月21日 (火) 10:44時点における版

佐藤 好弘 (Yoshihiro Sato)

• 博士3年
• 社会人D

受賞 / Award

1. 第19回プラズマエレクトロニクス賞, 2021年3月.

投稿論文 / Journal article

1. Yoshihiro Sato, Satoshi Shibata, Keiichiro Urabe and Koji Eriguchi, "Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions," Journal of Vacuum Science & Technology B 38, 012205 (2020).<doi:10.1116/1.5126344>
   Beneath the AVS Surface Highlighted Paper
2. Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," Journal of Vacuum Science & Technology A 37, 011304 (2019). <doi:10.1116/1.5048027>

招待講演 / Invited talks

International conferences

1. Y. Sato, T. Yamada, K. Nishimura, M. Yamasaki, M. Murakami, K. Urabe, and K. Eriguchi: "Evaluation of Plasma-Induced Stochastic Damage Creation in the Lateral Direction Using pn Junction Structures," The 20th International Workshop on Junction Technology (IWJT2021), S2-2 (On-line).
2. Y. Sato, S. Shibata, A. Uedono, K. Urabe, and K. Eriguch: “Characterization of residual defects created in Si substrates”, The Forum on the Science and Technology of Silicon Materials 2018, November 18-21, 2018, Okayama University 50th Anniversary Hall, Okayama, Japan.

Domestic conferences

1. 佐藤 好弘 ，柴田 聡，占部 継一郎，江利口浩二:「pn 接合構造を用いたシリコン基板へのプラズマ誘起ダメージの評価」,第82回応用物理学会秋季学術講演会，2021年9月10日～13日，オンライン開催，10p-S301-2．[プラズマエレクトロニクス賞受賞記念講演]