佐藤 好弘 (Yoshihiro Sato)

• 博士3年
• 社会人D

受賞 / Award

1. 第19回プラズマエレクトロニクス賞, 2021年3月.

投稿論文 / Journal article

1. [Beneath the AVS Surface Highlighted Paper] Yoshihiro Sato, Satoshi Shibata, Keiichiro Urabe and Koji Eriguchi, "Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions," Journal of Vacuum Science & Technology B 38, 012205 (2020).<doi:10.1116/1.5126344>
2. Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," Journal of Vacuum Science & Technology A 37, 011304 (2019). <doi:10.1116/1.5048027>