Publications/International conferences

京大推進研

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2014年1月3日 (金) 07:08時点におけるMatsuda (トーク | 投稿記録)による版
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国際会議発表一覧 （過去5年間）

(Showing presentations in the last 5 years)

目次

2013

  • Nobuya Nakazaki(D), Yoshinori Takao, Koji Eriguchi, Kouichi Ono: "Molecular Dynamics Analysis of Si Etching in HBr-based Plasmas: Ion Incident Energy and Angle Dependence", AVS 60th International Symposium & Exhibition, October 27-November 1, 2013, the Long Beach Convention Center, California, USA, PS-ThM-1.
  • Asahiko Matsuda, Yoshinori Nakakubo, Masanaga Fukasawa (Sony Corporation, Japan), Yoshinori Takao, Koji Eriguchi, Tetsuya Tatsumi (Sony Corporation, Japan), Kouichi Ono: "Effects of Plasma-Induced Si Damage Structures on Annealing Process Design—Gas Chemistry Impact", AVS 60th International Symposium & Exhibition, October 27-November 1, 2013, the Long Beach Convention Center, California, USA, PS-MoM-1.
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Molecular dynamics simulation of plasma-induced Si substrate damage: Latent defect structures and bias-frequency effects", The 66th Annual Gaseous Electronics Conference (GEC), September 30-October 4, 2013, the Westin Hotel, Princeton, New Jersey, NR2-3, Bull. Am. Phys. Soc. 58(8) p. 96.
  • Nobuya Nakazaki(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Effects of Etch By-Products Ion Incidence", The 66th Annual Gaseous Electronics Conference (GEC), September 30-October 4, 2013, the Westin Hotel, Princeton, New Jersey, LW1-6, Bull. Am. Phys. Soc. 58(8) p. 71.
  • Junya Suzuki(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Airflows Induced by Asymmetric Bipolar Voltage Pulses in Dielectric Barrier Discharge Plasma Actuator", The 66th Annual Gaseous Electronics Conference (GEC), September 30-October 4, 2013, the Westin Hotel, Princeton, New Jersey, CT1-83, Bull. Am. Phys. Soc. 58(8) p. 31.
  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "μ-Photoreflectance Spectroscopy for Microscale Monitoring of Plasma-induced Physical Damage", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, A-2, Proc. 35th Int. Symp. Dry Process, p.
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Scenario of plasma-induced physical damage in FinFET - the effects of "straggling" of incident ions by a range theory -", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, G-1, Proc. 35th Int. Symp. Dry Process, p. 181.
  • Nobuya Nakazaki(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics analysis of Si etching in HBr-based Plasmas: Effects of neutral radicals", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, P-74, Proc. 35th Int. Symp. Dry Process, p. 159.
  • Kouichi ono: "Plasma Etch Challenges for Nanoscale Device Fabrication: Modeling, Analysis, and Control of Plasma-Surface Interactions", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, Plenary-2, Proc. 35th Int. Symp. Dry Process, p. 47.
  • Tomoki Hazama(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Basic Study on Plasma Characteristics of ECR Discharges Toward High Power Electric Propulsion", 29th International Symposium on Space Technology and Science (ISTS 2013), June 2-9, 2013, Nagoya Congress Center, Nagoya, Aichi, Japan, s-11-b, Proc. 29th ISTS, 2013, pp. 2013-s-11-b.
  • Yoshinori Takao, Masataka Sakamoto, Koji Eriguchi, and Kouichi Ono: "Investigation of Plasma Characteristics and Ion Beam Extraction for a Micro RF Ion Thruster", 29th International Symposium on Space Technology and Science (ISTS 2013), June 2-9, 2013, Nagoya Congress Center, Nagoya, Aichi, Japan, b-19, Proc. 29th ISTS, 2013, pp. 2013-b-19.
  • Daisuke Mori(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microplasma Thruster Using Electron Cyclotron Resonance with Permanent Magnets", 29th International Symposium on Space Technology and Science (ISTS 2013), June 2-9, 2013, Nagoya Congress Center, Nagoya, Aichi, Japan, s-43-b, Proc. 29th ISTS, 2013, pp. 2013-s-43-b.
  • [Invited] Hirotaka Tsuda(D), Nobuya Nakazaki, Daisuke Fukushima, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Surface roughening during Si etching in inductively coupled Cl2 plasmas: Experimental investigations and a comparison with numerical simulations", The 6th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2013), Feburary 2-3, 2013, Gero Synergy Center, Gero, Gifu, Japan, S-1. IC-PLANTS 2013 The 6th International Conference on Plasma-Nanotechnology & Science, 2013, pp. S-01.

2012

2011

  • Hiroki Miyata (M), Hirotaka Tsuda, Daisuke Fukushima, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Fourier Transofrm Infrared Absorption Spectroscopy of Gas-Phase and Surface Reaction Products during Si Etching in Inductively Coupled Cl2 Plasmas", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, NR1-10, Bull. Am. Phys. Soc. 56(15) p. 64.
  • Nobuya Nakazaki (M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependences of Si etching with Cl, Br, and HBr beams", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, NR1-11, Bull. Am. Phys. Soc. 56(15) p. 64.
  • Kenji Matsuoka (M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle-in-cell/Monte Carlo simulation of capacitively coupled chlorine plasmas", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, TF2-3, Bull. Am. Phys. Soc. 56(15) p. 94.
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical analysis of inductive and capacitive coupling in radio-frequency micro discharges", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, FTP1-00043, Bull. Am. Phys. Soc. 56(15) p. 36.
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, B-2, Proc. 33rd Int. Symp. Dry Process, p. 15.
  • Kenji Matsuoka (M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of Capacitively Coupled Chlorine Plasma Using Two-dimensional Particle-in-cell/Monte Carlo Method", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, P1-13, Proc. 33rd Int. Symp. Dry Process, p. 47.
  • Nobuya Nakazaki (M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependence of Si etching with Cl, Br, and HBr beams", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, P1-16, Proc. 33rd Int. Symp. Dry Process, p. 53.
  • Asahiko Matsuda (D), Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, E-2, Proc. 33rd Int. Symp. Dry Process, p. 159.
  • Asahiko Matsuda (D), Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Improvement in the Evaluation Technique for Plasma-Etch Si Damage using Photoreflectance Spectroscopy with Temperature Control", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-ThM9.
  • Yoshinori Nakakubo (D), Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Effect of Rapid Thermal Annealing on Si Surface Damage by HBr/O2- and H2-Plasma", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-ThM12.
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Three-Dimensional Modeling and Formation Mechanisms of Atomic-Scale Surface Roughness during Si Etching in Chlorine-Based Plasmas", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-FrM9.
  • Tetsuo Kawanabe (M), Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited Microplasma Thruster with Applied Magnetic Field", 32nd International Electric Propulsion Conference, September 11–15, 2011, Kurhaus, Wiesbaden, Germany, IEPC-2011-262
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Two-Dimensional Particle-in-Cell Simulation of a Micro RF Ion Thruster", 32nd International Electric Propulsion Conference, September 11–15, 2011, Kurhaus, Wiesbaden, Germany, IEPC-2011-076
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution”, 4th International Conference on Plasma Nano-Technology & Science (IC-PLANTS 2011), March 10-12, 2011, Takayama Public Cultural Hall, Takayama, Gifu, Japan, Paper O-07, Proceedings, O-07.
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Surface Roughness Formation during Si Etching in Chlorine-based Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution”, 2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (2WPNI), March 1-4, Hotel Raj, Cerklje, Slovenia, March 2011, Proceedings, pp.41-42.

2010

2009

  • Hirotaka Tsuda (M), Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Fully Atomistic Profile Evolution Simulation of Nanometer-scale Si Trench Etching by Energetic F, Cl, and Br Beams", AVS 56th International Symposium & Exhibition (Plasma Science and Technology), November 8-13, 2009, San Jose Convention Center, San Jose, CA, USA, PS1-ThA8.
  • Yoshinori Takao, Takeshi Takahashi, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Optical Measurement of a Microwave-excited Miniature Plasma Source for Micro Propulsion", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, FT2.00001. Bull. Am. Phys. Soc. 54(12), 2009, p. 18.
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle Simulation of a Micro ICP Plasma Source for Miniature Ion Thruster", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, KTP.00097. Bull. Am. Phys. Soc. 54(12), 2009, p. 50.
  • Hirotaka Tsuda (M), Tatsuya Nagaoka, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Plasma-surface interactions during Si etching in Cl- and Br-based plasmas: An empirical and atomistic study", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, SR3.00004. Bull. Am. Phys. Soc. 54(12), 2009, p. 70.
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-24. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 338-339.
  • Asahiko Matsuda (M), Yoshinori Nakakubo, Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-28. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 346-347.
  • Hirotaka Tsuda (M), Masahito Mori, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 2-P19. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 45-46.
  • Yoshinori Nakakubo (D), Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 3-3. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 125-126.
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 9-4. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268.
  • Takeshi Takahashi (D), Shunsuke Kitanishi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design Improvement for Implemantation to Satellite", 31st International Electric Propulsion Conference (IEPC 2009), September 20-24, 2009, University of Michigan, Ann Arbor, MI, USA, IEPC-2009-190.
  • Takeshi Takahashi (D), Yugo Ichida, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight", 27th International Symposium on Space Technology and Science (ISTS 2009), July 5-12, 2009, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, b-21.
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 101-104.
  • Asahiko Matsuda (M), Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 97-100.
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