中崎 暢也 (Nobuya Nakazaki)

• 修士課程2年
• メール：nakazaki.nobuya.58xst.kyoto-u.ac.jp
• 所属学会：応用物理学会 (JSAP)
• 研究室内役職：OA委員、学会係
• 学生実験TA

研究 / Research

分子動力学（Molecular Dynamics: MD）法を用いたプラズマエッチング時の表面反応のシミュレーションを行っています。

学歴 / Education

• 2011年3月　京都大学 工学部 物理工学科 宇宙基礎工学コース　卒業
• 2011年4月　京都大学 大学院 工学研究科 航空宇宙工学専攻 入学（修士課程）

キーワード / Key words

• Molecular dynamics (MD)

お知らせ / What's New

• 2012/11/16　DPS 2012 にてポスター発表を行いました
• 2012/10/30　AVS 2012 にて口頭発表を行いました
• 2012/10/24　GEC 2012 にて口頭発表を行いました
• 2012/10/02　APCPST-SPSM 2012 にてポスター発表を行いました
• 2012/09/13　第73回秋季 応用物理学会学術講演会 にて口頭発表を行いました

• 2012/11/26 更新

国際学会 / International conferences

2012

• Nobuya Nakazaki(M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Surface Structure and Etch Products in Si/Cl and Si/Br Systems", 34th International Symposium on Dry Process (DPS 2012), November 15-16, 2012, Takeda Hall, Takeda Sentanchi Building, The University of Tokyo, Tokyo, Japan, P-33, Proc. 34th Int. Symp. Dry Process, p. 91.
• Nobuya Nakazaki(M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Si Etching with Cl and Br Beams: Ion Incident Angle and Neutral Radical Flux Dependence", AVS 59th International Symposium & Exhibition, October 28-November 2, 2012, Tampa Convention Center, Florida, USA, PS2-TuA10
• Nobuya Nakazaki(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Physical and Chemical Behavior of Etch Products Desorbed during Si Etching in Cl- and Br-based Plasmas", The 65th Annual Gaseous Electronics Conference (GEC), October 22-26, 2012, the AT&T Conference Center on The University of Texas at Austin campus in Austin, Texas, USA, HW2-5, Bull. Am. Phys. Soc. 57(8) p. 46.
• Nobuya Nakazaki(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Si Etching in Cl- and Br-based Plasmas", The 11th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 25th Symposium on Plasma Science for Materials (SPSM), October 2-5, 2012, Kyoto University ROHM Plaza, Kyoto, Japan, 2-P28. Abstracts, p.266.
• Nobuya Nakazaki(M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Si Etching with Cl beams: Ion Incident Angle and Neutral Radical Flux Dependence" , The 5th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2012), March 9-10, 2012, Freude, Inuyama International Sightseeing Center, Aichi, Japan, S-2. IC-PLANTS 2012 The 5th International Conference on Plasma-Nanotechnology & Science, 2012, pp. P-36.

2011

• Nobuya Nakazaki (M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependences of Si etching with Cl, Br, and HBr beams", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, NR1-11, Bull. Am. Phys. Soc. 56(15) p. 64.
• Nobuya Nakazaki (M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependence of Si etching with Cl, Br, and HBr beams", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, P1-16, Proc. 33rd Int. Symp. Dry Process, p. 53.

学位論文題目

学部卒業研究　(2010年度, 2011年3月)

「分子動力学法を用いた Si エッチング表面反応解析：Cl, Br, HBr ビームエッチングにおけるイオン入射角度依存性及び入射エネルギー依存性」

Links

---

在籍者一覧に戻る / Go back to List of Current Members