Arturo Donate

学術論文

2014

• Yoshinori. Takao, Hiroyuki. Koizumi, Kamiya. Komurasaki, Koji. Eriguchi, and Kouichi. Ono: “Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster", Plasma Sources Sci. Technol. 23 (Dec 2014) 064004. doi:10.1088/0963-0252/23/6/064004. http://iopscience.iop.org/0963-0252/23/6/064004
• Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products", J. Appl. Phys. 116 (Dec 2014) 223302.   KURENAI repository   doi:10.1063/1.4903956. http://scitation.aip.org/content/aip/journal/jap/116/22/10.1063/1.4903956
• Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas", Jpn. J. Appl. Phys. 53 (May 2014) 056201. <JJAP Spotlights> doi:10.7567/JJAP.53.056201. http://iopscience.iop.org/1347-4065/53/5/056201/
• Hirotaka Tsuda, Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments", J. Vac. Sci. Technol. B 32 (May 2014) 031212. doi: 10.1116/1.4874309. http://scitation.aip.org/content/avs/journal/jvstb/32/3/10.1116/1.4874309
• Yoshinori Takao, Masataka Sakamoto, Koji Eriguchi, and Kouichi Ono: "Investigation of Plasma Characteristics and Ion Beam Extraction for a Micro RF Ion Thruster", Trans. JSASS Aerospace Tech. Japan 12 ists29 (Dec 2014) Pb_13-Pb_18. doi:10.2322/tastj.12.Pb_13. https://www.jstage.jst.go.jp/article/tastj/12/ists29/12_Pb_13/_article
• Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao and Kouichi Ono:"Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DE02.doi:10.7567/JJAP.53.03DE02. http://iopscience.iop.org/1347-4065/53/3S2/03DE02
• Masayuki Kamei, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2 and high-k gate dielectrics", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DF02. doi:10.7567/JJAP.53.03DF02. http://iopscience.iop.org/1347-4065/53/3S2/03DF02
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DF01. doi:10.7567/JJAP.53.03DF01. http://iopscience.iop.org/1347-4065/53/3S2/03DF01
• T. Okumura, K. Eriguchi, M. Saitoh, and H. Kawaura, "Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DG01.
• Masao Noma, Koji Eriguchi, Yoshinori Takao, Nobuyuki Terayama and Kouichi Ono:"Structural, mechanical, and electrical properties of cubic boron nitride thin films deposited by magnetically enhanced plasma ion plating method", Jpn. J. Appl. Phys. 53 (Mar 2014) 03DB02. doi:10.7567/JJAP.53.03DB02. http://iopscience.iop.org/1347-4065/53/3S2/03DB02

2012

• K. Eriguchi, M. Kamei, Y. Takao, and K. Ono: "High-k MOSFET performance degradation by plasma process-induced charging damage" 2012 IEEE International Integrated Reliability Workshop Final Report, pp. 80-84 (2012).
• Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effect of capacitive coupling in a miniature inductively coupled plasma source", J. Appl. Phys. 112(9) (Nov 2012) 093306. <JAP Research Highlights>   KURENAI repository   doi: 10.1063/1.4764333. http://link.aip.org/link/?JAP/112/093306
• Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence”, Jpn. J. Appl. Phys. 51 (Aug 2012) 08HC01. doi: 10.1143/JJAP.51.08HC01. http://jjap.jsap.jp/link?JJAP/51/08HC01/

2011

• Koji Eriguchi, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor", Jpn. J. Appl. Phys. 50(10) (Oct 2011) 10PG02. doi: 10.1143/JJAP.50.10PG02. http://jjap.jsap.jp/link?JJAP/50/10PG02/
• Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KB02. doi: 10.1143/JJAP.50.08KB02. http://jjap.jsap.jp/link?JJAP/50/08KB02/
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD03. doi: 10.1143/JJAP.50.08KD03. http://jjap.jsap.jp/link?JJAP/50/08KD03/
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD04. doi: 10.1143/JJAP.50.08KD04. http://jjap.jsap.jp/link?JJAP/50/08KD04/
• Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Comparative Study of Plasma-Charging Damage in High-k Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD05. doi: 10.1143/JJAP.50.08KD05. http://jjap.jsap.jp/link?JJAP/50/08KD05/
• Hirotaka Tsuda, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08JE06. doi: 10.1143/JJAP.50.08JE06. http://jjap.jsap.jp/link?JJAP/50/08JE06/
• Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08JE04. doi: 10.1143/JJAP.50.08JE04. http://jjap.jsap.jp/link?JJAP/50/08JE04/
• Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08JC02. doi: 10.1143/JJAP.50.08JC02. http://jjap.jsap.jp/link?JJAP/50/08JC02/
• Takeshi Takahashi, Yoshinori Takao, Yugo Ichida, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster with helium and hydrogen propellants", Phys. Plasmas 18(6) (Jun 2011) 063505.   KURENAI repository   doi: 10.1063/1.3596539. http://link.aip.org/link/?PHP/18/063505
• Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices", J. Vac. Sci. Technol. A 29(4) (Jun 2011) 041303.   KURENAI repository   doi: 10.1116/1.3598382. http://link.aip.org/link/?JVA/29/041303/1
• Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono, Masaki Minami, Fumikatsu Uesawa, and Tetsuya Tatsumi: "Structural and electrical characterization of HBr/O2 plasma damage to Si substrate", J. Vac. Sci. Technol. A 29(4) (Jun 2011) 041301. doi: 10.1116/1.3596606. http://link.aip.org/link/?JVA/29/041301/1
• Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching", AIP Conf. Proc. 1333 (May 2011) 1051.   KURENAI repository   doi: 10.1063/1.3562784. http://link.aip.org/link/?APCPCS/1333/1051/1

2010

• Yoshinori Takao, Naoki Kusaba, Koji Eriguchi, and Kouichi Ono: "Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source", J. Appl. Phys. 108(9) (Nov 2010) 093309.   KURENAI repository   doi: 10.1063/1.3506536. http://link.aip.org/link/?JAP/108/093309/
• Takumi Saegusa, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires", Jpn. J. Appl. Phys. 49 (2010) 095204. doi:10.1143/JJAP.49.095204. http://jjap.ipap.jp/link?JJAP/49/095204/
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
• Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring", Jpn. J. Appl. Phys. 49 (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
• Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity", Jpn. J. Appl. Phys. 49 (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. 49 (2010) 056203. <JJAP Spotlights> http://jjap.ipap.jp/link?JJAP/49/056203/
• Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, and Kouichi Ono: "Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films", J. Appl. Phys. 107(1) (2010) 014518.   KURENAI repository   http://link.aip.org/link/JAPIAU/v107/i1/p014518/s1
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 04DA18. http://jjap.ipap.jp/link?JJAP/49/04DA18/
• Kouichi Ono, Hiroaki Ohta, and Koji Eriguchi: "Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study", Thin Solid Films 518(13) (2010) 3461-3468. doi:10.1016/j.tsf.2009.11.030
• Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing", Thin Solid Films 518(13) (2010) 3469-3474. doi:10.1016/j.tsf.2009.11.042
• Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue", Thin Solid Films 518(13) (2010) 3475-3480. doi:10.1016/j.tsf.2009.11.043
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", Thin Solid Films 518(13) (2010) 3481-3486. doi:10.1016/j.tsf.2009.11.044

2009

• Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of a Microwave-Excited Microplasma Thruster", Trans. Japan Soc. Aero. Space Sci., Space Technol. Japan 7 ists26 (Dec 2009) Pb_135. http://www.jstage.jst.go.jp/article/tstj/7/ists26/7_Pb_135/_article
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs", IEEE Electron Dev. Lett. 31(12) (Dec 2009) 1275-1277.   KURENAI repository   doi:10.1109/LED.2009.2033726
• Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology", Appl. Phys. Express 2 (Nov 2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/
• Hiroshi Fukumoto, Koji Eriguchi, and Kouichi Ono: "Effects of Mask Pattern Geometry on Plasma Etching Profiles", Jpn. J. Appl. Phys. 48(9) (Sep 2009) 096001. http://jjap.ipap.jp/link?JJAP/48/096001/
• Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono : "Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄ plasma etching of SiO₂", Plasma Sources Sci. Technol. 18(4) (Sep 2009) 045027. http://dx.doi.org/10.1088/0963-0252/18/4/045027
• Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster", Phys. Plasmas 16(8) (Aug 2009) 083505.   KURENAI repository   http://link.aip.org/link/?PHP/16/083505
• Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical Study on Si Etching by Monatomic Br⁺/Cl⁺ Beams and Diatomic Br₂⁺/Cl₂⁺/HBr⁺ Beams", Jpn. J. Appl. Phys. 48(7) (Jul 2009) 070219. http://jjap.ipap.jp/link?JJAP/48/070219/
• Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. doi:10.1109/LED.2009.2022347
• Hiroaki Ohta, Tatsuya Nagaoka, Koji Eriguchi, and Kouichi Ono: "An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations", Jpn. J. Appl. Phys. 48(2) (Feb 2009) 020225. http://jjap.ipap.jp/link?JJAP/48/020225/
• Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr⁺", J. Appl. Phys. 105(2) (Jan 2009) 023302. http://link.aip.org/link/?JAPIAU/105/023302/1
• Keisuke Nakamura, Daisuke Hamada, Yoshinori Ueda, Koji Eriguchi, and Kouichi Ono: "Selective Etching of High-k Dielectric HfO₂ Films over Si in BCl₃-Containing Plasmas without rf Biasing", Appl. Phys. Express 2(1) (Jan 2009) 016503. http://apex.ipap.jp/link?APEX/2/016503/
• Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, Hiroaki Ohta, and Kouichi Ono: "Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method", Appl. Phys. Lett. 94(1) (Jan 2009) 013507.   KURENAI repository   http://link.aip.org/link/?APPLAB/94/013507/1

2008

• Akira Iwakawa, Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics simulation of Si etching by off-normal Cl⁺ bombardment at high neutral-to-ion flux ratios", Jpn. J. Appl. Phys. 47(11) (Nov 2008) 8560-8564. http://jjap.ipap.jp/link?JJAP/47/8560
• Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow", J. Phys. D: Appl. Phys. 41(19) (Oct 2008) 194005. http://stacks.iop.org/0022-3727/41/194005
• Hiroaki Ohta, Akira Iwakawa, Koji Eriguchi, and Kouichi Ono: "An Interatomic Potential Model for Molecular Dynamics Simulation of Silicon Etching by Br⁺-containing Plasmas", J. Appl. Phys. 104(7) (Oct 2008) 073302. http://link.aip.org/link/?JAPIAU/104/073302/1
• Yoshinori Takao, Takeshi Takahashi, Koji Eriguchi and Kouichi Ono: "Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects", Pure Appl. Chem. 80(9) (Sep 2008) 2013-2023. http://www.iupac.org/publications/pac/80/9/2013/
• Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers ", Jpn. J. Appl. Phys. 47(4) (Aug 2008) 2446-2451. http://jjap.ipap.jp/link?JJAP/47/2446
• Yuichi Setsuhara, Daisuke Tsukiyama, Kosuke Takenaka, and Koichi Ono: "Simulation-Aided Designing of Meter-Scale Large-Area Plasma Source with Multiple Low-Inductance Antenna Modules", Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6903-6906. http://jjap.ipap.jp/link?JJAP/47/6903
• Yugo Osano and Kouichi Ono: "Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles", J. Vac. Sci. Technol. B 26(4) (Aug 2008) 1425-1439. http://dx.doi.org/10.1116/1.2958240
• Akira Iwakawa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical investigation on the origin of microscopic surface roughness during Si etching by chemically reactive plasmas", Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6464-6466. http://jjap.ipap.jp/link?JJAP/47/6464
• Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, and Kouichi Ono: "Estimation of defect generation probability in thin Si surface damaged layer during plasma processing", Thin Solid Films 516(19) (Aug 2008) 6604-6608. http://dx.doi.org/10.1016/j.tsf.2007.11.035
• Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono : "Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics", Jpn. J. Appl. Phys. 47(4) (Apr 2008) 2369-2374. http://jjap.ipap.jp/link?JJAP/47/2369
• Koji Eriguchi and Kouichi Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices", J. Phys. D: Appl. Phys. 41(2) (Jan 2008) 024002. http://dx.doi.org/10.1088/0022-3727/41/2/024002

2007

• Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis", J. Appl. Phys. 101(12) (Jun 2007) 123307.   KURENAI repository   http://link.aip.org/link/?JAPIAU/101/123307/1

2006

• Yoshinori Takao, Kouichi Ono, Kazuo Takahashi and Koji Eriguchi : "Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8235-8240.
• Yugo Osano, Masahito Mori, Naoshi Itabashi, Kazuo Takahashi, Koji Eriguchi and Kouichi Ono : "A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl₂/O₂ Plasmas", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8157-8162.
• Kosuke Takenaka, Yuichi Setsuhara, Kazuaki Nishisaka, Akinori Ebe, Shinya Sugiura, Kazuo Takahashi, and Koichi Ono: "Characterization of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Units", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8046-8049.
• Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, and Kouichi Ono: "Plasma etching of high-k and metal gate materials", Vacuum 80(7) (May 2006) 761-767.
• Yoshinori Takao, Kouichi Ono, Kazuo Takahashi, and Yuichi Setsuhara: "Microwave-sustained miniature plasmas for an ultra small thruster", Thin Solid Films 506-507 (May 2006) 592-596.
• H. Kousaka, K. Ono, N. Umehara, I. Sawada, and K. Ishibashi: "Plasma distribution in a planar-type surface wave-excited plasma source", Thin Solid Films 506-507 (May 2006) 503-507.
• Kazuo Takahashi and Kouichi Ono: "Selective etching of high-k HfO₂ films over Si in hydrogen-added fluorocarbon (CF₄/Ar/H₂ and C₄F₈/Ar/H₂) plasmas", J. Vac. Sci. Technol. A 24(3) (May 2006) 437-443.
• Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, Kazuo Takahashi, Kouichi Ono, Masanori Oosawa, Satoshi Hasaka, and Minoru Inoue: "Etching of High-k Dielectric HfO₂ Films in BCl₃-Containing Plasmas Enhanced with O₂ Addition", Jpn. J. Appl. Phys. 45(10) (Mar 2006) L297-L300.
• Yoshinori Takao and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited plasmas: a numerical design consideration", Plasma Sources Sci. Technol. 15(2) (Mar 2006) 211-227.

2005

• Yugo Osano and Kouichi Ono: "An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching", Jpn. J. Appl. Phys. 44(12) (Dec 2005) 8650-8660.
• Kazuo Takahashi, Kouichi Ono, and Yuichi Setsuhara: "Etching characteristics of high-k dielectrif HfO₂ thin films in inductively coupled fluorocarbon plasmas", J. Vac. Sci. Technol. A 23(6) (Oct 2005) 1691-1967.
• Yoshinori Takao and Kouichi Ono: "Development of Microplasma Thruster", J. High Temp. Soc. Jpn. 31(5) (Sep 2005) 283-290. [in Japanese. 鷹尾祥典, 斧高一: "マイクロプラズマスラスターの研究開発", 高温学会誌, 第31巻, 第5号 (2005), pp. 283-290.]
• Hiroyuki Kousaka, Noritsugu Umehara, Kouichi Ono, and Junqi Xu: "Microwave-Excited High-Density Plasma Column Sustained along Metal Rod at Negative Voltage", Jpn. J. Appl. Phys. 44(36) (Aug 2005) L1154-L1157.

2003

• Y. Setsuhara, T. Shoji, A. Ebe, S. Baba, N. Yamamoto, K. Takahashi, K. Ono, and S. Miyake: "Development of Internal-Antenna-Driven Large-Area RF Plasma Sources Using Multiple Low-Inductance Antenna Units", Surf. Coat. Technol. 174-175 (Jun 2003) 33-39.
• Kazuo Takahashi, Takashi Mitamura, Kouichi Ono, Yuichi Setsuhara, Atsushi Itoh, and Kunihide Tachibana: "Characterization of porosity and dielectric constant of fluorocarbon porous films synthesized by using plasma-enhanced chemical vapor deposition and solvent process", Appl. Phys. Lett. 82(15) (Apr 2003) 2476-2478.
• Hiroyuki Kousaka and Kouichi Ono: "Fine Structure of the Electromagnetic Fields Formed by Backward Surface Waves in an Azimuthally Symmetric Surface Waves", Plasma Sources Sci. Technol. 12(2) (Apr 2003) 273-286.

2002

• Hiroyuki Kousaka and Kouichi Ono: "Numerical Analysis of the Electromagnetic Fields in a Microwave Plasma Source Excited by Azimuthally Symmetric Surface Waves", Jpn. J. Appl. Phys. 41(4A) (Apr 2002) 2199-2206.