International conferences archive

京大推進研

2010年9月27日 (月) 11:50時点におけるMatsuda (トーク | 投稿記録)による版

(差分) ←前の版 | 最新版 (差分) | 次の版→ (差分)

移動：案内, 検索

このページには、古い（3年より前の）国際会議発表履歴を記録します。古い履歴はInternal:サイトガイドラインに基づき、一般には公開しません。

関連ページ: International conferences （最近の履歴）; Internal:Domestic conferences archive

2007

M. Mori, S. Irie, N. Itabashi, K. Eriguchi, K. Ono: "A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 7-8.
Y. Ueda, K. Nakamura, D. Hamada, M. Yoshida, K. Eriguchi, K. Ono: "Selective etching of high-k dielectric HfO₂ films in BCl₃-containing plasmas without rf biasing", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 283-284.
Y. Nakakubo, Y. Ueda, M. Yoshida, D. Hamada, M. Kamei, K. Eriguchi, K. Ono: "Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 287-288.
D. Hamada, K. Nakamura, Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Comparative Study of ECR and ICP Plasma Etching of High-k Dielectric HfO₂ Films with BCl₃-Containing Gas Chemistries", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA8.
M. Kamei, K. Eriguchi, H. Fukumoto, K. Ono: "Plasma source-dependent charging damage polarities in the performance degradation of MOSFETs with Hf-based high-k gate dielectrics", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA10.
K. Eriguchi, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Ions and Si Surface Interactions - Estimation of Plasma-Induced Defect Generation Probability", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS2-WeM5.
H. Fukumoto, K. Eriguchi, K. Ono: "Geometrical Effects on Etching Profile Evolution", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS1-ThM6.
S. Irie, M. Mori, N. Itabashi, K. Eriguchi, K. Ono: "Model Analysis of the Ion Reflection on Surfaces and the Profile Evolution during Etching of Si in Chlorine-and Bromine-Containing Plasmas", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-FrM9.
Kouichi Ono: "Microwave-Excited Microplasma Thruster: A Numerical and Experimental Study of the Plasma Generation and Micronozzle Flow" (Invited), 4th International Workshop on Microplasmas 2007, October 28-31, 2007, Tainan City, Taiwan, FO-004.
S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Atomic-scale model analysis of the feature profile evoltion during Si etching in chlorine- and bromine-containing plasmas", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 17.
Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Analysis of plasma-surface interactions during plasma etching by in-situ diagnostics of reactants and reaction products", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 19.
K. Eriguchi, M. Kamei, D. Hamada, K. Okada, K. Ono: "A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO₂ Gate Dielectrics", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, A-6-3. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
K. Eriguchi, A. Ohno, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-17. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical Analysis and Experiments of a Microwave-excited Microplasma Thruster", 30th International Electric Propulsion Conference, September 17-20, 2007, Florence, Italy, IEPC-2007-29.
Kouichi Ono: "Micro plasma thruster for ultra small satellites: Plasma chemical and aerodynamical aspects" (Invited), 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 29C-a1.
S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-25.
D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-26.
T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-123.
H. Fukumoto, K. Eriguchi, K. Ono: "Effects of geometrically different microstructures on etching profiles", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 30C-p6.
Kouichi Ono: "Plasma Etching" (Invited), IUPAC Summer School on Plasma Chemistry for Materials Processing, August 23-25, 2007, Kyoto, Japan. IUPAC Summer School on Plasma Chemistry for Materials Processing Lecture Notes, pp. 123-145.
M. Kamei, K. Eriguchi, K. Okada, K. Ono: "Investigation of Junction Characteristics of MOSFETs with High-k Gate Stack by Plasma Processing", International Conference on IC Design and Technology (ICICDT 2007), May 30-June 1, 2007, Austin, TX, USA. Proc. of 2007 Int. Conf. Integrated Circuit Design and Technology, pp. 117-120.
S. Irie, Y. Osano, M. Nori, K. Eriguchi, K. Ono: "Atomic-scale Model for Feature Profile Evolution during Chlorine- and Bromine-Containing Plasma Etching of Si ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-4. p. 13.
D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of High-k Dielectric HfO₂ in BCl₃-Containing Plasmas without RF Biasing ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-5. p. 14.
T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Microwave-Excited Micro Plasma Thruster ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-6. p. 15.