Publications/International conferences

京大推進研

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国際会議発表一覧 （過去10年間）

(Showing presentations in the last 10 years)

目次

2024

2023

  • K. Urabe, J. Morozumi, and K. Eriguchi: "Degradation of dielectric film by low-temperature plasma exposure investigated using in-situ impedance spectroscopy method" MRM2023/IUMRS-ICA2023, December 11-16, 2023, Kyoto International Conference Center, Kyoto, Japan.

2022

2021

2020

  • Y. Sato(D), T. Yamada, K. Nishimura, M. Yamasaki, M. Murakami, K. Urabe, and K. Eriguchi: "Characterization Scheme for Plasma-Induced Defect due to Stochastic Lateral Straggling in Si Substrates for Ultra-Low Leakage Devices," IEEE International Electron Devices Meeting (IEDM) 2020/12/14, 9.4 (On-line)
  • [Tutorial] K. Eriguchi: "Plasma-induced Damage—Modeling and Characterizations," International Symposium on Semiconductor Manufacturing (ISSM 2020), Tutorial (Dec. 15th, On-line)
  • [Invited] K. Urabe: "Influence of Gas-Refractive-Index Dispersion on Measurement of Electron Density Using Dispersion Interferometry", The 29th Int. Toki. Conf. on Plasma and Fusion Research (ITC-29), I24, (Online / Toki, Japan (Hybrid), Oct. 30, 2020).
  • T. Hamano(D), K. Urabe, and K. Eriguchi: "A Framework for Sensitive Assessment of Plasma Process-Induced Damage in Si Substrates", 2020 International Conference on Solid State Devices and Materials: SSDM2020, September 27-30, 2020, ALL-VIRTUAL. Proc. 52nd International Conference on Solid State Devices and Materials (SSDM), 705-706 (2020).
  • T. Hamano(D), K. Urabe, and K. Eriguchi: "Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance", International Conference on Simulation of Semiconductor Processes and Devices, September 23-October 6, 2020, ALL-VIRTUAL.
  • [Tutorial] K. Eriguchi: "Plasma-induced Damage—Modeling, Characterizations, and Design Methodologies", IEEE Int. Reliability Physics Symp. (IRPS 2020), Tutorial: TSA.2, 2020 (May, On-line).

2019

2018

2017

  • Y. Yoshikawa(M) and K. Eriguchi: “Prediction of electronic structure change induced by plasma processing: A first-principles study”, 39th International Symposium on Dry Process: DPS2017, November 16-17, 2017, Tokyo Tech Front, Tokyo Institute of Technology, Tokyo, Japan. Proc. 39th International Symposium on Dry Process (DPS), 217-218 (2017).
  • T. Kuyama(M) and K. Eriguchi: “Characterization technique of silicon nitride film damaged by plasma exposure”, 39th International Symposium on Dry Process: DPS2017, November 16-17, 2017, Tokyo Tech Front, Tokyo Institute of Technology, Tokyo, Japan. Proc. 39th International Symposium on Dry Process (DPS), 75-76 (2017).
  • T. Hamano(B) and K. Eriguchi: "A comprehensive analysis of progressive behavior of plasma-induced damage formation in Si substrates", 39th International Symposium on Dry Process: DPS2017, November 16-17, 2017, Tokyo Tech Front (Kuramae Kaikan), Tokyo Institute of Technology, Tokyo, Japan. Proc. 39th International Symposium on Dry Process (DPS), 215-216 (2017).
  • Y. Sato(D), S. Shibata, R. Sakaida, and K. Eriguchi: "Characterization of Residual Defects in Plasma-exposed Si Substrates using Cathodoluminescence and Positron Annihilation Spectroscopy ", 17th International Workshop on Junction Technology 2017, pp. 73-76 (Kyoto, Japan, June 2nd, 2017).
  • [Invited] K. Eriguchi: "Defect Generation in Si substrates during Plasma Processing", 17th International Workshop on Junction Technology 2017, pp. 69-72 (Kyoto, Japan, June 2nd, 2017).
  • [Invited] K. Eriguchi: "Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices", 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (Hernstein, Austria, May 24th, 2017).

2016

  • Z. Wei, Y. Katoh, S.Ogasahara, Y. Yoshimoto, K. Kawai, Y. Ikeda, K. Eriguchi, K.Ohmori, and S. Yoneda: "True Random Number Generator using Current Difference based on a Fractional Stochastic Model in 40-nm Embedded ReRAM", IEEE International Electron Device Meeting (IEDM) 2016, pp. 107-110 (2016).
  • [Invited] M. Noma, K. Eriguchi, M. Yamashita, and S. Hasegawa: "Coatings of Boron Nitride Films for Vacuum Tribology by Reactive Plasma Assisted Coating (RePAC) Technology—Friction coefficient lowering under vacuum—", 7th Tsukuba International Coating Symposium (TICS7), pp. 26-27 (Tsukuba, Japan, Dec. 8th, 2016).
  • Yukimasa Okada(M), Kouichi Ono, and Koji Eriguchi: "A new damage evaluation scheme predicting the nature of defects-an advanced capacitance-voltage technique", 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 23-24 (2016).
  • Kentaro Nishida(M), Kouichi Ono, and Koji Eriguchi: "An optical model for in-line analysis of plasma-induced interlayer dielectric damage", 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 81-82 (2016).
  • Kengo Shinohara(M), Kentaro Nishida, Kouichi Ono, and Koji Eriguchi: "Effects of plasma exposure on leakage and reliability parameters of dielectric film: New measures of damage?", 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 27-28 (2016).
  • Tomoya Higuchi(M), Yukimasa Okada, Kouichi Ono, and Koji Eriguchi: "Defect profiling of plasma-damaged layer by surface-controlled photoreflectance spectroscopy, 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 83-84 (2016).
  • M. Noma, K. Eriguchi, M. Yamashita, and S. Hasegawa: “Friction Coefficient Lowering in High-hardness Boron Nitride Films Under Ultra-high Vacuum”, AVS 63rd International Symposium & Exhibition (Nashville, TN, USA), TR+BI+SE+TF-ThA8 (2016).
  • M. Noma, M. Yamashita, K. Eriguchi, and S. Hasegawa: “Formation of superhard c-BN films on the body and edge of cutting tools by reactive plasma-assisted coating (RePAC)”, The 16th International Conference on Precision Engineering (Hamamatsu, Japan), P41-8147 (2016).

2015

  • Z. Wei, K. Eriguchi, S. Muraoka, K. Katayama, R. Yasuhara, K. Kawai, Y. Ikeda, M. Yoshimura, Y. Hayakawa, K. Shimakawa, T. Mikawa, S. Yoneda: "Distribution Projecting the Reliability for 40 nm ReRAM and beyond based on Stochastic Differential Equation", IEEE International Electron Device Meeting (IEDM) 2015, pp. 177-180 (2015).
  • Nobuya Nakazaki(D), Haruka Matsumoto, Soma Sonobe, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 13-14 (2015).
  • Chihiro Takeshita(M), Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Silicon Nanowire Groeth on Si and SiO2 Substrate by Plasma Sputtering", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 139-140 (2015).
  • Yukimasa Okada(M), Koji Eriguchi and Kouichi Ono: "Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 211-212 (2015).
  • Kentaro Nishida(M), Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "A new evaluation method to characterize low-k dielectric damage during plasma processing", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 213-214 (2015).
  • Koji Eriguchi, Masayuki Kamei, Yoshinori Nakakubo, and Kouichi Ono: "Role of Plasma Density in Damage Characterization and its Impact on Low-Damage Plasma Process Design", AVS 62nd International Symposium & Exhibition, October 18-23, 2015, San Jose Convention Center, California, PS+AS+SS-WeA-10.
  • [Invited] Kouichi Ono: "Plasma-induced Surface Roughening and Ripple Formation during Plasma Etching of Silicon", AVS 62nd International Symposium & Exhibition, October 18-23, 2015, San Jose Convention Center, California, PS2-TuA-7.
  • Nobuya Nakazaki(D), Haruka Matsumoto, Koji Eriguchi, and Kouichi Ono: "Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates", 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing,Monday–Friday, October 12–16, 2015; Honolulu, Hawaii, OR2.4, Bull. Am. Phys. Soc. 60(9) p. 118.
  • [Invited] Kouichi Ono: "Plasma-surface interactions for top-down and bottom-up nanofabrication", 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing,Monday–Friday, October 12–16, 2015; Honolulu, Hawaii, JW1.1, Bull. Am. Phys. Soc. 60(9) p. 70.
  • [Invited] Koji Eriguchi: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability", The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (Oct. 7th 2015, Toulouse, France).
  • Keisuke Ueno(M), Daisuke Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle-in-Cell Simulation of a Micro ECR Plasma Thruster", 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing,Monday–Friday, October 12–16, 2015; Honolulu, Hawaii, DT1.4, Bull. Am. Phys. Soc. 60(9) p. 14.
  • Keisuke Ueno(M), Daisuke Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle-in-Cell Simulation of a Micro ECR Plasma Thruster", 30th International Symposium on Space Technology and Science (ISTS 2015),34th International Electric Propulsion Conference (IEPC 2015),6th Nano-satellite Symposium, July 4-10, 2015, Kobe, Japan, IEPC-2015-240/ISTS-2015-b-240.
  • Takuya Kobatake(M), Masanori Deguchi, Junya Suzuki, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Optical Diagnostics of Plasma Evolution and Induced Air Flows in Dielectric Barrier Discharge Plasma Actuator", 30th International Symposium on Space Technology and Science (ISTS 2015),34th International Electric Propulsion Conference (IEPC 2015),6th Nano-satellite Symposium,July 4-10, 2015, Kobe, Japan, 2015-e-17.
  • Y. Okada(M), K. Eriguchi, and K. Ono: "Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing", IEEE Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), June 2-3, 2015, Leuven, Belgium.
  • T. Ikeda, A. Tanihara, N. Yamamoto, S. Kasai, K. Eriguchi, and K. Ono: "Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout", IEEE Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), June 2-3, 2015, Leuven, Belgium.
  • Z. Wei, K. Eriguchi, K. Katayama, S. Muraoka, R. Yasuhara, and T. Mikawa: "A New Prediction Method for ReRAM Data Retention Statistics based on 3D Filament Structures", IEEE Int. Reliability Physics Symp (IRPS), 5B.4.1-5B.4.4, April 21-23, 2015, Monterey, California.
  • [Invited] Koji Eriguchi: "Modeling of Plasma-induced Damage in Advanced Transistors in ULSI Circuits", Semiconductor Equipment and Materials International (SEMI) Korea, Technology Symposium 2015, Feb. 5th, 2015, Korea.


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