Member:Matsuda

京大推進研

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松田朝彦 (Asahiko Matsuda)

目次

  • 博士後期課程(2013年5月授与)
  • 独立行政法人 日本学術振興会 特別研究員(2011年4月〜2013年3月)
  • 米 National Institute of Standards and Technology (NIST) 客員研究員(2013年4月~)

研究テーマ

プラズマによる半導体材料のエッチングの際、高エネルギーのイオンが固体表面に入射することにより発生する「物理的プラズマダメージ」について研究しています。プラズマに曝露したシリコンウエハ表面のダメージ層の特性を、光の反射を使って非接触的に測定する手法「フォトリフレクタンス分光法」や「分光エリプソメトリー」に特に注目し、先進的な測定方法論の構築を試みています。

  • メール:matsuda.asahiko.74sCinnamonroll.pngst.kyoto-u.ac.jp , asa.matsudaCinnamonroll.pngieee.org
  • 所属学会:応用物理学会, IEEE, AVS
  • 研究室内役職:HP係

経歴

  • 2008年3月 京都大学 工学部 物理工学科(宇宙基礎工学コース)卒業
  • 2008年4月 京都大学 大学院 工学研究科 航空宇宙工学専攻 修士課程 入学
  • 2008年8月~9月 (株)東芝 生産技術センター 研究インターンシップ
  • 2010年3月 京都大学 大学院 工学研究科 航空宇宙工学専攻 修士課程 修了
  • 2010年4月 同 博士後期課程 進学
  • 2011年4月~2013年3月 独立行政法人 日本学術振興会 特別研究員
  • 2013年4月 National Institute of Standards and Technology 客員研究員 着任
  • 2013年5月 京都大学 博士(工学)授与


Awards 受賞歴

DPS 2010 Young Researcher Award

  • 32nd International Symposium on Dry Process (DPS 2010)
  • 2011年11月
  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", DPS 2010, November 11-12, 2010, Tokyo Institute of Technology, Japan.

第33回(2011年度)応用物理学会優秀論文賞

DPS 2009 Best Paper Award

  • 31st International Symposium on Dry Process (DPS 2009)
  • 2010年11月
  • K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, K. Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", DPS 2009, September 24-25, 2009, Busan, Korea.

Publications/Presentations 刊行物・学会発表

Refereed journal papers 査読付き原著論文

  1. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate", Jpn. J. Appl. Phys. 53(3S2) (Mar 2014) 03DF01. doi: 10.7567/JJAP.53.03DF01.
  2. Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao and Kouichi Ono: "Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors", Jpn. J. Appl. Phys. 53(3S2) (Mar 2014) 03DE02. doi: 10.7567/JJAP.53.03DE02.
  3. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD03. doi: 10.1143/JJAP.50.08KD03. http://jjap.jsap.jp/link?JJAP/50/08KD03/
  4. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology", Jpn. J. Appl. Phys. 50(8) (Aug 2011) 08KD04. doi: 10.1143/JJAP.50.08KD04. http://jjap.jsap.jp/link?JJAP/50/08KD04/
  5. Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono, Masaki Minami, Fumikatsu Uesawa, and Tetsuya Tatsumi: "Structural and electrical characterization of HBr/O2 plasma damage to Si substrate", J. Vac. Sci. Technol. A 29(4) (Jun 2011) 041301. doi: 10.1116/1.3596606. http://link.aip.org/link/?JVA/29/041301/1
  6. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
  7. Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring", Jpn. J. Appl. Phys. 49 (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
  8. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. 49 (2010) 056203. http://jjap.ipap.jp/link?JJAP/49/056203/
  9. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", Thin Solid Films 518(13) (2010) 3481-3486. doi:10.1016/j.tsf.2009.11.044
  10. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs", IEEE Electron Dev. Lett. 30(12) (Dec 2009) 1275-1277.  PDF KURENAI repository   doi:10.1109/LED.2009.2033726
  11. Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. doi:10.1109/LED.2009.2022347

Book chapter 著書

  1. Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Chapter 8: Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", in Emerging Technologies and Circuits, eds. Amara Amara, Thomas Ea, and Marc Belleville. Lecture Notes in Electrical Engineering 66 (Springer, London, 2010) Part IV, pp. 107-120. ISBN 978-90-481-9378-3. doi:10.1007/978-90-481-9379-0_8

International conference presentations 国際学会発表

  1. Asahiko Matsuda, Yoshinori Nakakubo, Masanaga Fukasawa (Sony Corporation, Japan), Yoshinori Takao, Koji Eriguchi, Tetsuya Tatsumi (Sony Corporation, Japan), Kouichi Ono: "Effects of Plasma-Induced Si Damage Structures on Annealing Process Design—Gas Chemistry Impact", AVS 60th International Symposium & Exhibition, October 27-November 1, 2013, the Long Beach Convention Center, California, USA, PS-MoM-1.
  2. Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Molecular dynamics simulation of plasma-induced Si substrate damage: Latent defect structures and bias-frequency effects", The 66th Annual Gaseous Electronics Conference (GEC), September 30-October 4, 2013, the Westin Hotel, Princeton, New Jersey, NR2-3, Bull. Am. Phys. Soc. 58(8) p. 96.
  3. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "μ-Photoreflectance Spectroscopy for Microscale Monitoring of Plasma-induced Physical Damage", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, A-2, Proc. 35th Int. Symp. Dry Process, p.
  4. Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Scenario of plasma-induced physical damage in FinFET - the effects of "straggling" of incident ions by a range theory -", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, G-1, Proc. 35th Int. Symp. Dry Process, p. 181.
  5. Asahiko Matsuda, Yoshinori Nakakubo, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouchi Ono: "Three-Dimensional Parameter Mapping of Annealing Processes for HBr/O2-Plasma-Induced Damages in Si Substrates", 34th International Symposium on Dry Process, November 15–16, 2012, University of Tokyo, Japan, H-2, Proc. 34th Int. Symp. Dry Process, p. 181.
  6. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Optimization Problems for Plasma-Induced Damage: A Concept for Plasma-Induced Damage Design", 2012 IEEE International Conference on IC Design & Technology (ICICDT), May 30-June 1, 2012, Austin, TX, USA.
  7. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Optical Characterization of Plasma-Induced Si Damage by Ar and Cl2 Inductively Coupled Plasmas", Plasma Etch and Strip in Microelectronics, March 15–16, 2012, Minatec, Grenoble, France.
  8. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Unifed Model-Prediction Framework for MOSFET Performance Degradation by Plasma-Induced Si Damage and its Application to Process Parameter Optimization", Plasma Etch and Strip in Microelectronics, March 15–16, 2012, Minatec, Grenoble, France.
  9. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, E-2, Proc. 33rd Int. Symp. Dry Process, p. 159.
  10. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Improvement in the Evaluation Technique for Plasma-Etch Si Damage using Photoreflectance Spectroscopy with Temperature Control", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-ThM9.
  11. Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Effect of Rapid Thermal Annealing on Si Surface Damage by HBr/O2- and H2-Plasma", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-ThM12.
  12. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", DPS 2010: 32nd International Symposium on Dry Process, November 12, 2010, Ookayama Campus, Tokyo Institute of Technology, Japan, J-4. pp. 191-192.
  13. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar MOSFETs and the Optimization Strategies", DPS 2010: 32nd International Symposium on Dry Process, November 12, 2010, Ookayama Campus, Tokyo Institute of Technology, Japan, J-1. pp. 185-186.
  14. Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites", DPS 2010: 32nd International Symposium on Dry Process, November 12, 2010, Ookayama Campus, Tokyo Institute of Technology, Japan, P2-J2. pp. 173-174.
  15. Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-28. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 346-347.
  16. Asahiko Matsuda, Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 97-100.
  17. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Ueda, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-13. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 358-359.
  18. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-24. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 338-339.
  19. Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 3-3. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 125-126.
  20. Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 9-4. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268.
  21. Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 101-104.
  22. K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, K. Ishikawa, M. Yoshimaru, and K. Ono: "A New Framework for Performance Prediction of Advanced MOSFETs with Plasma-Induced Recess Structure and Latent Defect Site", IEEE International Electron Devices Meeting (IEDM), 2008, December 15-17, 2008, San Francisco, CA, USA. 2008 IEDM Technical Digest, 2008, pp. 1-4.
  23. Y. Nakakubo, A. Matsuda, Y. Ueda, H. Ohta, K. Eriguchi, and K. Ono: "Clarification of Surface and Interface Structures exposed to Inductively Coupled Plasma with Various Superposed Bias Frequencies and Its Implication in Plasma Damage Control", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS1-WeM4 .
  24. Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, K. Eriguchi and K. Ono: "Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 101-104.

Domestic conference presentations 国内学会発表

  1. 松田朝彦, 中久保義則, 鷹尾祥典, 江利口浩二, 斧高一:「温度制御型フォトリフレクタンス分光法を用いたプラズマ誘起Si基板ダメージの定量化とそのプロファイル解析」, 電子情報通信学会 シリコン材料・デバイス研究会(IEICE-SDM), 2012年10月25日~26日, 東北大学, 4.
  2. 江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一: 招待講演「物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル」, 2011年10月, 信学技報 111(249), SDM2011-110, pp. 73-78.
  3. 中久保義則, 江利口浩二, 松田朝彦, 鷹尾祥典, 斧高一: 「電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討」, 2011年10月, 信学技報 111(249), SDM2011-111, pp. 79-84.
  4. 江利口浩二,中久保義則,松田朝彦,鷹尾祥典,斧高一: 優秀論文賞受賞記念講演 "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", 第72回 応用物理学会学術講演会, 2011年8月29日–9月2日, 山形大学, 31p-M-1.
  5. 中久保義則, 松田朝彦, 深沢正永, 鷹尾祥典,辰巳哲也, 江利口浩二,斧高一: 「HBr/O2, H2プラズマダメージに対する高速熱処理プロセスの効果」, 第72回 応用物理学会学術講演会, 2011年8月29日–9月2日, 山形大学, 31p-M-7.
  6. 江利口浩二,中久保義則,松田朝彦,鷹尾祥典,斧高一: 「プラズマプロセスにおけるSi基板ダメージ層形成モデルの提案」,第71回 応用物理学会学術講演会, 2010年9月16日, 長崎大学, 16a-ZA-8.
  7. 松田朝彦,中久保義則,鷹尾祥典,江利口浩二,斧高一: 「分子動力学法によるプラズマ誘起ダメージ予測:イオンエネルギー分布の影響 (Projecting Plasma-Induced Damage by Molecular Dynamics Simulation: Effects of Ion Energy Distribution)」, 第71回 応用物理学会学術講演会, 2010年9月16日, 長崎大学, 16a-ZA-9.
  8. 深沢正永,中久保義則,松田朝彦,鷹尾祥典,江利口浩二,斧高一,南正樹,上澤史且,辰巳哲也: 「Hを含むプラズマによるSi基板ダメージの構造解析(II)」, 第71回 応用物理学会学術講演会, 2010年9月16日, 長崎大学, 16a-ZA-10.
  9. 松田朝彦,中久保義則,深沢正永,鷹尾祥典,辰巳哲也,江利口浩二,斧 高一: 「H2を含むプラズマによるSi基板ダメージの光学的・電気的構造 (Optical and Electrical Structure of Si Substrates Damaged by H2-Containing Plasma)」, 第70回応用物理学会学術講演会, 2009年9月9日, 富山大学, 9a-ZG-13.
  10. Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effects of O2 addition on Si substrate surface damage exposed to Ar plasma", 第22回プラズマ材料科学シンポジウム, 2009年6月15日, 東京大学山上会館, P-6.
  11. Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", 第22回プラズマ材料科学シンポジウム, 2009年6月15日, 東京大学山上会館, P-7.
  12. 中久保義則,松田朝彦,荻野力,上田義法,江利口浩二,斧高一: 「O2添加ArプラズマによるSi基板表面層内誘起欠陥の電気的解析」, 第56回応用物理学関係連合講演会, 2009年3月30日-4月2日, 筑波大学 筑波キャンパス, 1p-ZW-11.
  13. 松田朝彦,荻野力,中久保義則,太田裕朗,江利口浩二,斧高一: 「Si表面のプラズマダメージの精確な解析における界面層の重要性 (On the Importance of Interface Layer in Accurate Analysis of Plasma-Induced Damage on Si Surfaces)」, 第56回応用物理学関係連合講演会, 2009年3月30日-4月2日, 筑波大学 筑波キャンパス, 1p-ZW-12.
  14. 松田朝彦,荻野力,中久保義則,太田裕朗,江利口浩二,斧高一: 「Si表面におけるプラズマダメージ層増大の分光エリプソメトリーと 分子動力学シミュレーションによる解析 (Detailed Analysis of Plasma-Damaged Layer and Its Significance in Si Surface Structures by Spectroscopic Ellipsometry and Molecular Dynamics Simulations)」, プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会 (PSS-2009/SPP-26), 2009年2月2日-4日, 名古屋大学 豊田講堂・シンポジオン, P3-02. Plasma Sci. Symp. 2009 and 26th Symp. Plasma Processing Proc., p. 424.
  15. 中久保義則, 松田朝彦, 上田義法, 太田裕朗, 江利口浩二, 斧高一: 「Ar系プラズマにおけるSi表面層内誘起欠陥形成過程のO2添加効果」, 第69回応用物理学会学術講演会, 2008年9月3日, 中部大学, 3a-ZC-11.

Seminars/Workshops セミナー等

  1. 松田朝彦(招待講演):「プラズマプロセスにおけるSi基板ダメージと光学的評価手法」, ICAN Kyou Sou Seminar【第5回】ナノデバイスにおける微細加工技術についてのオープンセミナー, 2012年3月5日, 産業技術総合研究所 西-7A SCR

学位論文題目

修士論文
"Optical Modeling of Si Surface and Interface Structures Damaged by Inductively Coupled Plasma"
(誘導結合型プラズマによるSi表面・界面ダメージ層の光学モデリング)
学部卒業研究
「分光エリプソメトリーによるプラズマ暴露シリコン表面の診断に関する研究」

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