Publications/Journals

京大推進研

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目次

Paper.png 学術論文

2017

  • Koji Eriguchi, "Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage", Journal of Physics D: Applied Physics, Vol. 50, No. 33, pp.333001, (2017), <doi:10.1088/1361-6463/aa7523>
  • Koji Eriguchi and Yukimasa Okada, "Electrical characterization of carrier trapping behavior of defects created by plasma exposures", Journal of Physics D: Applied Physics, Vol. 50, No. 26, 26LT01, (2017), <doi:10.1088/1361-6463/aa731a>
  • Yukimasa Okada, Kouichi Ono and Koji Eriguchi, "An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD04, (2017), <doi:10.7567/JJAP.56.06HD04>
  • Koji Eriguchi, "Defect generation in electronic devices under plasma exposure: Plasma-induced damage", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HA01, (2017), <doi:10.7567/JJAP.56.06HA01>
  • Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD03, (2017), <doi:10.7567/JJAP.56.06HD03>
  • Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD01, (2017), <doi:10.7567/JJAP.56.06HD01>
  • Z. Wei and K. Eriguchi, "Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation", IEEE Transactions on Electron Devices, Vol. 64, No. 5, 2201-2206 (2017), <doi: 10.1109/ted.2017.2681104>

2016

  • Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Surface smoothing during plasma etching of Si in Cl2", APPLIED PHYSICS LETTERS 109, 204101 (2016). <doi: 10.1063/1.4967474>
  • Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono,"Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring",Japanese Journal of Applied Physics, Volume 55, Number 6S2,06HB04,May 2016,<doi:10.7567/JJAP.55.06HB04>

2015

  • Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals", J. Appl. Phys. 118, 233304 (2015).  PDF KURENAI repository   doi:10.1063/1.4937449. http://dx.doi.org/10.1063/1.4937449
    Publisher's Note: J. Appl. Phys. 119, 059901 (2016). doi:10.1063/1.4941034. http://dx.doi.org/10.1063/1.4941034
  • Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2", Appl. Phys. Express. 8, 066201 (2015). <APEX Spotlights> doi:10.7567/APEX.8.066201. http://iopscience.iop.org/1882-0786/8/6/066201
  • Takaaki Iwai, Koji Eriguchi, Shohei Yamauchi, Naotaka Noro, Junichi Kitagawa, and Kouichi Ono: "Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate", J. Vac. Sci. Technol. A 33, 061403 (2015). doi:10.1116/1.4927128. http://dx.doi.org/10.1116/1.4927128
  • Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate", ECS Journal of Solid State Science and Technology, 4(6), N5077-N5083 (2015). doi:10.1149/2.0121506jss.
  • Koji Eriguchi and Kouichi Ono: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability", Microelectronics Reliability 55, 1464-1470 (2015).

2014

2012

  • K. Eriguchi, M. Kamei, Y. Takao, and K. Ono: "High-k MOSFET performance degradation by plasma process-induced charging damage" 2012 IEEE International Integrated Reliability Workshop Final Report, pp. 80-84 (2012).
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effect of capacitive coupling in a miniature inductively coupled plasma source", J. Appl. Phys. 112(9) (Nov 2012) 093306. <JAP Research Highlights>  PDF KURENAI repository   doi: 10.1063/1.4764333. http://link.aip.org/link/?JAP/112/093306
  • Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence”, Jpn. J. Appl. Phys. 51 (Aug 2012) 08HC01. doi: 10.1143/JJAP.51.08HC01. http://jjap.jsap.jp/link?JJAP/51/08HC01/

2011

2010

  • Yoshinori Takao, Naoki Kusaba, Koji Eriguchi, and Kouichi Ono: "Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source", J. Appl. Phys. 108(9) (Nov 2010) 093309.  PDF KURENAI repository   doi: 10.1063/1.3506536. http://link.aip.org/link/?JAP/108/093309/
  • Takumi Saegusa, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires", Jpn. J. Appl. Phys. 49 (2010) 095204. doi:10.1143/JJAP.49.095204. http://jjap.ipap.jp/link?JJAP/49/095204/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
  • Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring", Jpn. J. Appl. Phys. 49 (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
  • Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity", Jpn. J. Appl. Phys. 49 (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. 49 (2010) 056203. <JJAP Spotlights> http://jjap.ipap.jp/link?JJAP/49/056203/
  • Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, and Kouichi Ono: "Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films", J. Appl. Phys. 107(1) (2010) 014518.  PDF KURENAI repository   http://link.aip.org/link/JAPIAU/v107/i1/p014518/s1
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 49 (2010) 04DA18. http://jjap.ipap.jp/link?JJAP/49/04DA18/
  • Kouichi Ono, Hiroaki Ohta, and Koji Eriguchi: "Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study", Thin Solid Films 518(13) (2010) 3461-3468. doi:10.1016/j.tsf.2009.11.030
  • Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing", Thin Solid Films 518(13) (2010) 3469-3474. doi:10.1016/j.tsf.2009.11.042
  • Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue", Thin Solid Films 518(13) (2010) 3475-3480. doi:10.1016/j.tsf.2009.11.043
  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", Thin Solid Films 518(13) (2010) 3481-3486. doi:10.1016/j.tsf.2009.11.044

2009

  • Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of a Microwave-Excited Microplasma Thruster", Trans. Japan Soc. Aero. Space Sci., Space Technol. Japan 7 ists26 (Dec 2009) Pb_135. http://www.jstage.jst.go.jp/article/tstj/7/ists26/7_Pb_135/_article
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs", IEEE Electron Dev. Lett. 31(12) (Dec 2009) 1275-1277.  PDF KURENAI repository   doi:10.1109/LED.2009.2033726
  • Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology", Appl. Phys. Express 2 (Nov 2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/
  • Hiroshi Fukumoto, Koji Eriguchi, and Kouichi Ono: "Effects of Mask Pattern Geometry on Plasma Etching Profiles", Jpn. J. Appl. Phys. 48(9) (Sep 2009) 096001. http://jjap.ipap.jp/link?JJAP/48/096001/
  • Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono : "Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2", Plasma Sources Sci. Technol. 18(4) (Sep 2009) 045027. http://dx.doi.org/10.1088/0963-0252/18/4/045027
  • Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster", Phys. Plasmas 16(8) (Aug 2009) 083505.  PDF KURENAI repository   http://link.aip.org/link/?PHP/16/083505
  • Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical Study on Si Etching by Monatomic Br+/Cl+ Beams and Diatomic Br2+/Cl2+/HBr+ Beams", Jpn. J. Appl. Phys. 48(7) (Jul 2009) 070219. http://jjap.ipap.jp/link?JJAP/48/070219/
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. doi:10.1109/LED.2009.2022347
  • Hiroaki Ohta, Tatsuya Nagaoka, Koji Eriguchi, and Kouichi Ono: "An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations", Jpn. J. Appl. Phys. 48(2) (Feb 2009) 020225. http://jjap.ipap.jp/link?JJAP/48/020225/
  • Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+", J. Appl. Phys. 105(2) (Jan 2009) 023302.  PDF KURENAI repository   http://link.aip.org/link/?JAPIAU/105/023302/1
  • Keisuke Nakamura, Daisuke Hamada, Yoshinori Ueda, Koji Eriguchi, and Kouichi Ono: "Selective Etching of High-k Dielectric HfO2 Films over Si in BCl3-Containing Plasmas without rf Biasing", Appl. Phys. Express 2(1) (Jan 2009) 016503. http://apex.ipap.jp/link?APEX/2/016503/
  • Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, Hiroaki Ohta, and Kouichi Ono: "Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method", Appl. Phys. Lett. 94(1) (Jan 2009) 013507.  PDF KURENAI repository   http://link.aip.org/link/?APPLAB/94/013507/1

2008

  • Akira Iwakawa, Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics simulation of Si etching by off-normal Cl+ bombardment at high neutral-to-ion flux ratios", Jpn. J. Appl. Phys. 47(11) (Nov 2008) 8560-8564. http://jjap.ipap.jp/link?JJAP/47/8560
  • Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow", J. Phys. D: Appl. Phys. 41(19) (Oct 2008) 194005. http://stacks.iop.org/0022-3727/41/194005
  • Hiroaki Ohta, Akira Iwakawa, Koji Eriguchi, and Kouichi Ono: "An Interatomic Potential Model for Molecular Dynamics Simulation of Silicon Etching by Br+-containing Plasmas", J. Appl. Phys. 104(7) (Oct 2008) 073302.  PDF KURENAI repository   http://link.aip.org/link/?JAPIAU/104/073302/1
  • Yoshinori Takao, Takeshi Takahashi, Koji Eriguchi and Kouichi Ono: "Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects", Pure Appl. Chem. 80(9) (Sep 2008) 2013-2023. http://www.iupac.org/publications/pac/80/9/2013/
  • Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers ", Jpn. J. Appl. Phys. 47(4) (Aug 2008) 2446-2451. http://jjap.ipap.jp/link?JJAP/47/2446
  • Yuichi Setsuhara, Daisuke Tsukiyama, Kosuke Takenaka, and Koichi Ono: "Simulation-Aided Designing of Meter-Scale Large-Area Plasma Source with Multiple Low-Inductance Antenna Modules", Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6903-6906. http://jjap.ipap.jp/link?JJAP/47/6903
  • Yugo Osano and Kouichi Ono: "Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles", J. Vac. Sci. Technol. B 26(4) (Aug 2008) 1425-1439.  PDF KURENAI repository   http://dx.doi.org/10.1116/1.2958240
  • Akira Iwakawa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical investigation on the origin of microscopic surface roughness during Si etching by chemically reactive plasmas", Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6464-6466. http://jjap.ipap.jp/link?JJAP/47/6464
  • Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, and Kouichi Ono: "Estimation of defect generation probability in thin Si surface damaged layer during plasma processing", Thin Solid Films 516(19) (Aug 2008) 6604-6608. http://dx.doi.org/10.1016/j.tsf.2007.11.035
  • Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono : "Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics", Jpn. J. Appl. Phys. 47(4) (Apr 2008) 2369-2374. http://jjap.ipap.jp/link?JJAP/47/2369
  • Koji Eriguchi and Kouichi Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices", J. Phys. D: Appl. Phys. 41(2) (Jan 2008) 024002. http://dx.doi.org/10.1088/0022-3727/41/2/024002

2007

2006

  • Yoshinori Takao, Kouichi Ono, Kazuo Takahashi and Koji Eriguchi : "Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8235-8240.
  • Yugo Osano, Masahito Mori, Naoshi Itabashi, Kazuo Takahashi, Koji Eriguchi and Kouichi Ono : "A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl2/O2 Plasmas", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8157-8162.
  • Kosuke Takenaka, Yuichi Setsuhara, Kazuaki Nishisaka, Akinori Ebe, Shinya Sugiura, Kazuo Takahashi, and Koichi Ono: "Characterization of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Units", Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8046-8049.
  • Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, and Kouichi Ono: "Plasma etching of high-k and metal gate materials", Vacuum 80(7) (May 2006) 761-767.
  • Yoshinori Takao, Kouichi Ono, Kazuo Takahashi, and Yuichi Setsuhara: "Microwave-sustained miniature plasmas for an ultra small thruster", Thin Solid Films 506-507 (May 2006) 592-596.
  • H. Kousaka, K. Ono, N. Umehara, I. Sawada, and K. Ishibashi: "Plasma distribution in a planar-type surface wave-excited plasma source", Thin Solid Films 506-507 (May 2006) 503-507.
  • Kazuo Takahashi and Kouichi Ono: "Selective etching of high-k HfO2 films over Si in hydrogen-added fluorocarbon (CF4/Ar/H2 and C4F8/Ar/H2) plasmas", J. Vac. Sci. Technol. A 24(3) (May 2006) 437-443.  PDF KURENAI repository  
  • Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, Kazuo Takahashi, Kouichi Ono, Masanori Oosawa, Satoshi Hasaka, and Minoru Inoue: "Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition", Jpn. J. Appl. Phys. 45(10) (Mar 2006) L297-L300.
  • Yoshinori Takao and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited plasmas: a numerical design consideration", Plasma Sources Sci. Technol. 15(2) (Mar 2006) 211-227.