2010年6月22日 (火) 11:25時点における版

国際会議発表一覧

（招待講演を除き、直近3年間のみ表示）

2010

• Hirotaka Tsuda, Tatsuya Nagaoka, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-scale analysis of plasma-surface interactions and feature profile evolution by molecular dynamics approaches", The 3rd International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2010), March 11-12, 2010, Meijyo University, Nagoya, Japan, P-22. IC-PLANTS 2010 The 3rd International Conference on Plasma-Nanotechnology & Science, 2010, pp. P-22.
• Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Profile simulation of silicon etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches", The 1st International Workshop on Plasma Nano-interfaces, January 10, 2010, Nagasaki University, Nagasaki, Japan, FS06.

2009

• Hirotaka Tsuda, Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Fully Atomistic Profile Evolution Simulation of Nanometer-scale Si Trench Etching by Energetic F, Cl, and Br Beams", AVS 56th International Symposium & Exhibition (Plasma Science and Technology), November 8-13, 2009, San Jose Convention Center, San Jose, CA, USA, PS1-ThA8.
• Yoshinori Takao, Takeshi Takahashi, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Optical Measurement of a Microwave-excited Miniature Plasma Source for Micro Propulsion", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, FT2.00001. Bull. Am. Phys. Soc. 54(12), 2009, p. 18.
• Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle Simulation of a Micro ICP Plasma Source for Miniature Ion Thruster", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, KTP.00097. Bull. Am. Phys. Soc. 54(12), 2009, p. 50.
• Hirotaka Tsuda, Tatsuya Nagaoka, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Plasma-surface interactions during Si etching in Cl- and Br-based plasmas: An empirical and atomistic study", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, SR3.00004. Bull. Am. Phys. Soc. 54(12), 2009, p. 70.
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-24. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 338-339.
• Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-28. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 346-347.
• Hirotaka Tsuda, Masahito Mori, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 2-P19. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 45-46.
• Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of H₂ Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 3-3. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 125-126.
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 9-4. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268.
• Takeshi Takahashi, Shunsuke Kitanishi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design Improvement for Implemantation to Satellite", 31st International Electric Propulsion Conference (IEPC 2009), September 20-24, 2009, University of Michigan, Ann Arbor, MI, USA, IEPC-2009-190.
• Takeshi Takahashi, Yugo Ichida, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight", 27th International Symposium on Space Technology and Science (ISTS 2009), July 5-12, 2009, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, b-21.
• Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 101-104.
• Asahiko Matsuda, Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 97-100.

2008

• Takumi Saegusa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Heat conduction in naked, H-terminated, and native-oxide-coated Si nanowires", 2008 Material Research Society (MRS) Fall Meeting, December 1-5, 2008, Boston, MA, USA, LL4.18.
• K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, K. Ishikawa, M. Yoshimaru, and K. Ono: "A New Framework for Performance Prediction of Advanced MOSFETs with Plasma-Induced Recess Structure and Latent Defect Site", IEEE International Electron Devices Meeting (IEDM), 2008, December 15-17, 2008, San Francisco, CA, USA. 2008 IEDM Technical Digest, 2008, pp. 1-4.
• H. Fukumoto, H. Ohta, K. Eriguchi, and K. Ono: "Effects of Etching-Mask Geometry and Charging on Etching Profile Evolution", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP24.
• H. Ohta, T. Nagaoka, K. Eriguchi, and K. Ono: "A Novel Interatomic Potential Model for MD Simulation of Si Etching by Cl⁺/B⁺ Containing Plasmas", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP20.
• T. Nagaoka, H. Ohta, K. Eriguchi, and K. Ono: "Molecular Dynamics Simulation of Si Etching by Monoenergetic Br⁺, Br₂⁺, H⁺, and HBr⁺ Ions Generated in HBr Plasmas", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP19 .
• Y. Nakakubo, A. Matsuda, Y. Ueda, H. Ohta, K. Eriguchi, and K. Ono: "Clarification of Surface and Interface Structures exposed to Inductively Coupled Plasma with Various Superposed Bias Frequencies and Its Implication in Plasma Damage Control", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS1-WeM4 .
• Yoshinori Ueda, Keisuke Nakamura, Hiroaki Kiyokami, Hiroaki Ohta, Koji Eriguchi, Kouichi Ono: "Threshold energy for plasma etching of high-k dielectric HfO₂ films in BCl₃-containing plasmas", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, TX, USA, XF1.00002. Bull. Am. Phys. Soc. 53(10), 2008, p. 94.
• H. Ohta, T. Nagaoka, A. Iwakawa, K. Eriguchi, K. Ono: "Quantitative improvement in MD-based plasma etching simulator: Si etching by halogen-including plasmas", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, WF3.00003. Bull. Am. Phys. Soc. 53(10), 2008, p. 92.
• Hirotaka Tsuda, Shoki Irie, Masahito Mori, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching in chlorine- and bromine-containing plasmas: Effects of surface oxidation on evolution of feature profiles", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, DT1.00003 . Bull. Am. Phys. Soc. 53(10), 2008, p. 18.
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Ueda, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-13. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 358-359.
• Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale simulation of Si etching by energetic Br⁺ and Br₂⁺ ions for the analysis of Gate- or STI-etching processes", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-1. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 334-335.
• H. Ohta, A. Iwakawa, K. Eriguchi, and K. Ono: "Atomic-scale Simulation of Silicon Etching by Bromine-containing Plasmas", 26th International Rarefied Gas Dynamics Symposium (RGD26), July 21-25, 2008, Kyoto University, Kyoto, Japan, 25-1-B.
• Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, K. Eriguchi and K. Ono: "Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 101-104.
• K. Eriguchi, M. Kamei, K. Okada, H. Ohta and K. Ono: "Threshold Voltage Shift Instability Induced by Plasma Charging Damage in MOSFETs with High-k Dielectric", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 97-100.
• Yugo Ichida, Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant", 26th International Symposium on Space Technology and Science (ISTS 2008), June 2-8, 2008, Act City Hamamatsu, Japan, b-20. ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science, 2008, .
• Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Numerical Simulation of a Microwave-Excited Microplasma Thruster", 26th International Symposium on Space Technology and Science (ISTS 2008), June 2-8, 2008, Act City Hamamatsu, Japan, b-17. ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science, 2008, .

2007

• M. Mori, S. Irie, N. Itabashi, K. Eriguchi, K. Ono: "A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 7-8.
• Y. Ueda, K. Nakamura, D. Hamada, M. Yoshida, K. Eriguchi, K. Ono: "Selective etching of high-k dielectric HfO₂ films in BCl₃-containing plasmas without rf biasing", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 283-284.
• Y. Nakakubo, Y. Ueda, M. Yoshida, D. Hamada, M. Kamei, K. Eriguchi, K. Ono: "Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 287-288.
• D. Hamada, K. Nakamura, Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Comparative Study of ECR and ICP Plasma Etching of High-k Dielectric HfO₂ Films with BCl₃-Containing Gas Chemistries", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA8.
• M. Kamei, K. Eriguchi, H. Fukumoto, K. Ono: "Plasma source-dependent charging damage polarities in the performance degradation of MOSFETs with Hf-based high-k gate dielectrics", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA10.
• K. Eriguchi, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Ions and Si Surface Interactions - Estimation of Plasma-Induced Defect Generation Probability", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS2-WeM5.
• H. Fukumoto, K. Eriguchi, K. Ono: "Geometrical Effects on Etching Profile Evolution", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS1-ThM6.
• S. Irie, M. Mori, N. Itabashi, K. Eriguchi, K. Ono: "Model Analysis of the Ion Reflection on Surfaces and the Profile Evolution during Etching of Si in Chlorine-and Bromine-Containing Plasmas", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-FrM9.
• Kouichi Ono: "Microwave-Excited Microplasma Thruster: A Numerical and Experimental Study of the Plasma Generation and Micronozzle Flow" (Invited), 4th International Workshop on Microplasmas 2007, October 28-31, 2007, Tainan City, Taiwan, FO-004.
• S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Atomic-scale model analysis of the feature profile evoltion during Si etching in chlorine- and bromine-containing plasmas", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 17.
• Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Analysis of plasma-surface interactions during plasma etching by in-situ diagnostics of reactants and reaction products", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 19.
• K. Eriguchi, M. Kamei, D. Hamada, K. Okada, K. Ono: "A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO₂ Gate Dielectrics", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, A-6-3. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
• K. Eriguchi, A. Ohno, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-17. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical Analysis and Experiments of a Microwave-excited Microplasma Thruster", 30th International Electric Propulsion Conference, September 17-20, 2007, Florence, Italy, IEPC-2007-29.
• Kouichi Ono: "Micro plasma thruster for ultra small satellites: Plasma chemical and aerodynamical aspects" (Invited), 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 29C-a1.
• S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-25.
• D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-26.
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-123.
• H. Fukumoto, K. Eriguchi, K. Ono: "Effects of geometrically different microstructures on etching profiles", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 30C-p6.
• Kouichi Ono: "Plasma Etching" (Invited), IUPAC Summer School on Plasma Chemistry for Materials Processing, August 23-25, 2007, Kyoto, Japan. IUPAC Summer School on Plasma Chemistry for Materials Processing Lecture Notes, pp. 123-145.
• M. Kamei, K. Eriguchi, K. Okada, K. Ono: "Investigation of Junction Characteristics of MOSFETs with High-k Gate Stack by Plasma Processing", International Conference on IC Design and Technology (ICICDT 2007), May 30-June 1, 2007, Austin, TX, USA. Proc. of 2007 Int. Conf. Integrated Circuit Design and Technology, pp. 117-120.
• S. Irie, Y. Osano, M. Nori, K. Eriguchi, K. Ono: "Atomic-scale Model for Feature Profile Evolution during Chlorine- and Bromine-Containing Plasma Etching of Si ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-4. p. 13.
• D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of High-k Dielectric HfO₂ in BCl₃-Containing Plasmas without RF Biasing ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-5. p. 14.
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Microwave-Excited Micro Plasma Thruster ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-6. p. 15.

2006

• Koji Eriguchi, Kazuo Takahashi, and Kouichi Ono: "Plasma-induced damage and its impacts on the reliability of advanced semiconductor devices" (Invited), 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing (ICRP-6/SPP-23), January 24-27, 2006, Matsushima/Sendai, Japan, A-1. pp. 5-6.

2005

• Kouichi Ono: "Micro plasma thruster for small spacecraft" (Invited), 58th Gaseous Electronics Conference (GEC), October 16-20, 2005, San Jose, CA, USA. Bull. Am. Phys. Soc. Vol. 50, p. 9.
• Kouichi Ono: "Plasma etching of high-k and metal gate materials" (Invited), 8th International Symposium on Sputtering & Plasma Processes, June 8-10, 2005, Kanazawa, Japan, PP2-5. pp. 258-263.

2004

• Kouichi Ono: "Applications of Micro- and Nano-Technologies to Space: Current Status and Vision of the Future" (Invited), 24th International Symposium on Space Technology and Science, May 30-June 6, 2004, Miyazaki, Japan.