Publications/Journals

京大推進研

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'''学術論文'''
 
'''学術論文'''
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==2024==
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*Keiichiro Urabe, Minami Toyoda, Yoshinori Matsuoka, and Koji Eriguchi: “Investigation of small-fraction molecular impurities in high-pressure helium plasmas using optical plasma diagnostic methods”, Plasma Sources Sci. Technol. '''33''', 025011 (2024). <[[doi:10.1088/1361-6595/ad1f38]]>
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==2023==
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*Junki Morozumi, Takahiro Goya, Tomohiro Kuyama, Koji Eriguchi, and Keiichiro Urabe: “In situ electrical monitoring of SiO2/Si structures in low-temperature plasma using impedance spectroscopy”, Jpn. J. Appl. Phys. '''62''', SI1010 (2023). <[[doi:10.35848/1347-4065/acc7ae]]>
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==2022==
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* Yoshihiro Sato, Satoshi Shibata, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami, Keiichiro Urabe, and Koji Eriguchi: "Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution," J. Vac. Sci. Technol. B '''40''', 062209 (2022). <[[doi: 10.1116/6.0002181]]>
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* Seiya Kito, Keiichiro Urabe, and Koji Eriguchi: "Multi-harmonic analysis in a floating harmonic probe method for diagnostics of electron energy and ion density in low-temperature plasmas", Japanese Journal of Applied Physics '''61''', 106002 (2022). <[[doi: 10.35848/1347-4065/ac87e1]]>
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* Yoshihiro Sato, Satoshi Shibata, Takayoshi Yamada, Kazuko Nishimura, Masayuku Yamasaki, Masashi Murakami, Keiichiro Urabe, and Koji Eriguchi: "Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage," IEEE Journal of the Electron Devices Society '''10''', 769 (2022). <[[doi: 10.1109/JEDS.2022.3176321]]>
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* Takayuki Matsuda, Takashi Hamano, Yuya Asamoto, Masao Noma, Michiru Yamashita, Shigehiko Hasegawa, Keiichiro Urabe, and Koji Eriguchi: “Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique,” Jpn. J. Appl. Phys. '''61''', Sl1014 (2022). <[[doi:10.35848/1347-4065/ac5d16]]>
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* Tomohiro Kuyama, Keiichiro Urabe, and Koji Eriguchi, "Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis," Journal of Applied Physics '''131''', 133302 (2022).<[[doi:10.1063/5.0085042]]>
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* Takashi Hamano, Takayuki Matsuda, Yuya Asamoto, Masao Noma, Shigehiko Hasegawa, Michiru Yamashita, Keiichiro Urabe, and Koji Eriguchi, “Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method,” Appl. Phys. Lett. '''120''', 031904 (2022). <[[doi:10.1063/5.0077147]]>
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==2021==
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* Masahito Mori, Shoki Irie, Yugo Osano,  Koji Eriguchi, and Kouichi Ono, "Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas," J. Vac. Sci. Technol. A '''39''', 043002 (2021).
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* Koji Eriguchi, "Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage," Jpn. J. Appl. Phys. '''60''', 040101 (2021). [INVITED REVIEW]<[[doi:10.35848/1347-4065/abe47c]]>
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==2020==
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* Tomohiro Kuyama, Keiichiro Urabe, Masanaga Fukasawa, Tetsuya Tatsumi, and Koji Eriguchi, "Characterization of dynamic behaviors of defects in Si substrates created by H<sub>2</sub> plasma using conductance method," Jpn. J. Appl. Phys. '''59''', SJJC02 (2020), <[[doi:10.35848/1347-4065/ab8280]]>
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* Florent P. Sainct, Keiichiro Urabe, Erwan Pannier, Deanna A. Lacoste, and Christophe O. Laux: “Electron number density measurements in nanosecond repetitively pulsed discharges in water vapor at atmospheric pressure," Plasma Sources Sci. Technol. '''29''', 025018 (2020). <[[doi: 10.1088/1361-6595/ab681b]]>
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* Tsuyoshi Akiyama, Michael A. Zeeland, Thomas N. Carlstrom, Rejean L. Boivin, Kai J. Brunner, Jens Knauer, Ryo Yasuhara, Kenji Tanaka, Hai-Qing Liu, Yan Zhou, Naoyuki Oyama, Antoine Sirinelli, Keiichiro Urabe, and Naoki Shirai: “Recent progress on dispersion interferometers for nuclear fusion and low-temperature plasmas," J. Instrum. '''126''', C01004 (2020). <[[doi: 10.1088/1748-0221/15/01/C01004]]>
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* Yoshihiro Sato, Satoshi Shibata, Keiichiro Urabe, and Koji Eriguchi: “Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions,” J. Vac. Sci. Technol. B '''38''', 012205 (2020).  {{red|<picked up at a newsletter [[http://campaign.r20.constantcontact.com/render?m=1101176060676&ca=569cd11f-3b79-4732-a21b-36c451c21628#LETTER.BLOCK659 Beneath the AVS Surface]], Feb. 2020>}} <[[doi: 10.1116/1.5126344]]>
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==2019==
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* Taro Ikeda, Akira Tanihara, Nobuhiko Yamamoto, and Koji Eriguchi: “Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma," J. Appl. Phys. '''126''', 083304 (2019). <[[doi:10.1063/1.5083937]]>
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* Takashi Hamano, Keiichiro Urabe, and Koji Eriguchi: “Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance-voltage characteristics,” J. Phys. D: Appl. Phys. '''52''', 455102 (2019). <[[doi: 10.1088/1361-6463/ab3550]]>
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* Tomoya Higuchi, Masao Noma, Michiru Yamashita, Keiichiro Urabe, Shigehiko Hasegawa, and Koji Eriguchi, "Characterization of surface modification mechanisms for boron nitride films under plasma exposure," Surface and Coatings Technol. '''377''', 124854 (2019). <[[doi: 10.1016/j.surfcoat.2019.07.071]]>
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* Masahito Mori, Yugo Osano, Shoki Irie, Koji Eriguchi, and Kouichi Ono, "Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas," J. Vac. Sci. Technol. A '''37''', 051301 (2019). <[[doi:10.1116/1.5091673]]>
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* Koji Eriguchi, Takashi Hamano, and Keiichiro Urabe, "Improvement of the plasma‐induced defect generation model in Si substrates and the optimization design framework," Plasma Process. Polym. '''16''', 1900058 (2019). <[[doi:10.1002/ppap.201900058]]>
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* Takeshi Takahashi, Daisuke Mori, Tetsuo Kawanabe, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Microplasma thruster powered by X-band microwaves," J. Appl. Phys. '''125''', 083301 (2019). <[[doi:10.1063/1.5054790]]>
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* Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe, and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," J. Vac. Sci. Technol. A '''37''', 011304 (2019). <[[doi:10.1116/1.5048027]]>
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* Hitoshi Muneoka, Shohei Himeno, Keiichiro Urabe, Sven Stauss, Motoyoshi Baba, Tohru Suemoto, and Kazuo Terashima, "Dynamics of cavitation bubbles formed by pulsed-laser ablation plasmas near the critical point of CO2," J. Phys. D: Appl. Phys. '''52''', 025201 (2019). <[[doi:10.1088/1361-6463/aae44a]]>
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==2018==
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* Takumi Hatsuse,  Nobuya Nakazaki, Hirotaka Tsuda,  Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection," J. Appl. Phys. '''124''', 143301 (2018). <[http://dx.doi.org/10.1063/1.5041846 doi:10.1063/1.5041846]>
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* Tomohiro Kuyama and Koji Eriguchi, "Optical and electrical characterization methods of plasma-induced damage in silicon nitride films," Jpn. J. Appl. Phys.  '''57''', 06JD03 (2018). <[http://dx.doi.org/10.7567/JJAP.57.06JD03 doi:10.7567/JJAP.57.06JD03]>
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* Yuta Yoshikawa and Koji Eriguchi, "First-principles predictions of electronic structure change in plasma-damaged materials," Jpn. J. Appl. Phys. '''57''', 06JD04 (2018). <[http://dx.doi.org/10.7567/JJAP.57.06JD04 doi:10.7567/JJAP.57.06JD04]>
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* Takashi Hamano and Koji Eriguchi, "Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas," Jpn. J. Appl. Phys. '''57''', 06JD02 (2018). <[http://dx.doi.org/10.7567/JJAP.57.06JD02 doi:10.7567/JJAP.57.06JD02]>
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* Nobuya Nakazaki, Haruka Matsumoto, Soma Sonobe, Takumi Hatsuse, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Ripple formation on Si surfaces during plasma etching in Cl2," AIP Adv. '''8''', 055027 (2018). <[http://dx.doi.org/10.1063/1.5017070 doi:10.1063/1.5017070]>
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==2017==
 
==2017==
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* Koji Eriguchi, "Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage", Journal of Physics D: Applied Physics, Vol. 50, No. 33, pp.333001, (2017), <[[doi:10.1088/1361-6463/aa7523]]>
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* Koji Eriguchi, "Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage," J. Phys. D: Appl. Phys. '''50''', No. 33, pp.333001, (2017), <[[doi:10.1088/1361-6463/aa7523]]>
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* Koji Eriguchi and Yukimasa Okada, "Electrical characterization of carrier trapping behavior of defects created by plasma exposures", Journal of Physics D: Applied Physics, Vol. 50, No. 26, 26LT01, (2017), <[[doi:10.1088/1361-6463/aa731a]]>
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* Kouichi Ono, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, and Koji Eriguchi, "Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation,” J. Phys. D: Appl. Phys. '''50''', 414001 (2017), <[[doi: 10.1088/1361-6463/aa8523]]>
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* Yukimasa Okada, Kouichi Ono and Koji Eriguchi, "An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD04, (2017), <[[doi:10.7567/JJAP.56.06HD04]]>
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* Koji Eriguchi and Yukimasa Okada, "Electrical characterization of carrier trapping behavior of defects created by plasma exposures," J. Phys. D: Appl. Phys. '''50''', No. 26, 26LT01, (2017), <[[doi:10.1088/1361-6463/aa731a]]>
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* Koji Eriguchi, "Defect generation in electronic devices under plasma exposure: Plasma-induced damage", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HA01, (2017), <[[doi:10.7567/JJAP.56.06HA01]]>
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* Yukimasa Okada, Kouichi Ono and Koji Eriguchi, "An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement," Jpn. J. Appl. Phys. '''56''', No. 6S2, 06HD04, (2017), <[[doi:10.7567/JJAP.56.06HD04]]>
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* Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD03, (2017), <[[doi:10.7567/JJAP.56.06HD03]]>
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* Koji Eriguchi, "Defect generation in electronic devices under plasma exposure: Plasma-induced damage," Jpn. J. Appl. Phys. '''56''', No. 6S2, 06HA01, (2017), <[[doi:10.7567/JJAP.56.06HA01]]>
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* Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films", Japanese Journal of Applied Physics, Vol. 56, No. 6S2, 06HD01, (2017), <[[doi:10.7567/JJAP.56.06HD01]]>
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* Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing," Jpn. J. Appl. Phys. '''56''', No. 6S2, 06HD03, (2017), <[[doi:10.7567/JJAP.56.06HD03]]>
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* Z. Wei and K. Eriguchi, "Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation", IEEE Transactions on Electron Devices, Vol. 64, No. 5, 2201-2206 (2017), <[[doi: 10.1109/ted.2017.2681104]]>
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* Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films," Jpn. J. Appl. Phys. '''56''', No. 6S2, 06HD01, (2017), <[[doi:10.7567/JJAP.56.06HD01]]>
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* Z. Wei and K. Eriguchi, "Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation," IEEE Trans. Electron Devices '''64''', No. 5, 2201-2206 (2017), <[[doi: 10.1109/ted.2017.2681104]]>
  
 
==2016==
 
==2016==
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* Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Surface smoothing during plasma etching of Si in Cl2", APPLIED PHYSICS LETTERS 109, 204101 (2016). <[[doi: 10.1063/1.4967474]]>
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* Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Surface smoothing during plasma etching of Si in Cl2," Appl. Phys. Lett. '''109''', 204101 (2016), <[[doi: 10.1063/1.4967474]]>
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* Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono,"Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring",Japanese Journal of Applied Physics, Volume 55, Number 6S2,06HB04,May 2016,<[[doi:10.7567/JJAP.55.06HB04]]>
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* Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono,"Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring," Jpn. J. Appl. Phys. '''55''', No. 6S2, 06HB04 (2016),<[[doi:10.7567/JJAP.55.06HB04]]>
  
 
==2015==
 
==2015==
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* Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals", J. Appl. Phys. '''118''', 233304 (2015). {{KURENAI|http://hdl.handle.net/2433/203166}} [[doi:10.1063/1.4937449]]. http://dx.doi.org/10.1063/1.4937449<br>Publisher's Note: J. Appl. Phys. '''119''', 059901 (2016). [[doi:10.1063/1.4941034]]. http://dx.doi.org/10.1063/1.4941034
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* Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals," J. Appl. Phys. '''118''', 233304 (2015). {{KURENAI|http://hdl.handle.net/2433/203166}} [[doi:10.1063/1.4937449]]. http://dx.doi.org/10.1063/1.4937449<br>Publisher's Note: J. Appl. Phys. '''119''', 059901 (2016). [[doi:10.1063/1.4941034]]. http://dx.doi.org/10.1063/1.4941034
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* Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2", Appl. Phys. Express. '''8''', 066201 (2015).  {{red|<APEX Spotlights>}} [[doi:10.7567/APEX.8.066201]]. http://iopscience.iop.org/1882-0786/8/6/066201
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* Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2," Appl. Phys. Express. '''8''', 066201 (2015).  {{red|<APEX Spotlights>}} [[doi:10.7567/APEX.8.066201]]. http://iopscience.iop.org/1882-0786/8/6/066201
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* Takaaki Iwai, Koji Eriguchi, Shohei Yamauchi, Naotaka Noro, Junichi Kitagawa, and Kouichi Ono: "Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate", J. Vac. Sci. Technol. A '''33''', 061403 (2015). [[doi:10.1116/1.4927128]]. http://dx.doi.org/10.1116/1.4927128
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* Takaaki Iwai, Koji Eriguchi, Shohei Yamauchi, Naotaka Noro, Junichi Kitagawa, and Kouichi Ono: "Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate," J. Vac. Sci. Technol. A '''33''', 061403 (2015). [[doi:10.1116/1.4927128]]. http://dx.doi.org/10.1116/1.4927128
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* Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate", ECS Journal of Solid State Science and Technology, 4(6), N5077-N5083 (2015). [[doi:10.1149/2.0121506jss]].
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* Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate," ECS Journal of Solid State Science and Technology, 4(6), N5077-N5083 (2015). [[doi:10.1149/2.0121506jss]].
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* Koji Eriguchi and Kouichi Ono: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability", Microelectronics Reliability '''55''', 1464-1470 (2015).
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* Koji Eriguchi and Kouichi Ono: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability," Microelectronics Reliability '''55''', 1464-1470 (2015).
  
 
==2014==
 
==2014==
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*Yoshinori Takao, Hiroyuki Koizumi, Kamiya Komurasaki, Koji Eriguchi, and Kouichi Ono: “Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster", Plasma Sources Sci. Technol. '''23''' (Dec 2014) 064004. [[doi:10.1088/0963-0252/23/6/064004]]. http://iopscience.iop.org/0963-0252/23/6/064004
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*Yoshinori Takao, Hiroyuki Koizumi, Kamiya Komurasaki, Koji Eriguchi, and Kouichi Ono: “Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster," Plasma Sources Sci. Technol. '''23''' (Dec 2014) 064004. [[doi:10.1088/0963-0252/23/6/064004]]. http://iopscience.iop.org/0963-0252/23/6/064004
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* Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products", J. Appl. Phys. '''116''' (Dec 2014) 223302. {{KURENAI|http://hdl.handle.net/2433/193256}} [[doi:10.1063/1.4903956]]. http://scitation.aip.org/content/aip/journal/jap/116/22/10.1063/1.4903956
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* Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products," J. Appl. Phys. '''116''' (Dec 2014) 223302. {{KURENAI|http://hdl.handle.net/2433/193256}} [[doi:10.1063/1.4903956]]. http://scitation.aip.org/content/aip/journal/jap/116/22/10.1063/1.4903956
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* Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas", Jpn. J. Appl. Phys. '''53''' (May 2014) 056201.  {{red|<JJAP Spotlights>}} [[doi:10.7567/JJAP.53.056201]]. http://iopscience.iop.org/1347-4065/53/5/056201/
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* Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas," Jpn. J. Appl. Phys. '''53''' (May 2014) 056201.  {{red|<JJAP Spotlights>}} [[doi:10.7567/JJAP.53.056201]]. http://iopscience.iop.org/1347-4065/53/5/056201/
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* Hirotaka Tsuda, Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments", J. Vac. Sci. Technol. B '''32''' (May 2014) 031212.{{KURENAI|http://hdl.handle.net/2433/193618}}[[doi: 10.1116/1.4874309]]. http://scitation.aip.org/content/avs/journal/jvstb/32/3/10.1116/1.4874309
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* Hirotaka Tsuda, Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments," J. Vac. Sci. Technol. B '''32''' (May 2014) 031212.{{KURENAI|http://hdl.handle.net/2433/193618}}[[doi: 10.1116/1.4874309]]. http://scitation.aip.org/content/avs/journal/jvstb/32/3/10.1116/1.4874309
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* Yoshinori Takao,  Masataka Sakamoto, Koji Eriguchi, and Kouichi Ono: "Investigation of Plasma Characteristics and Ion Beam Extraction for a Micro RF Ion Thruster", Trans. JSASS Aerospace Tech. Japan '''12''' ists29 (Dec 2014) Pb_13-Pb_18. [[doi:10.2322/tastj.12.Pb_13]]. https://www.jstage.jst.go.jp/article/tastj/12/ists29/12_Pb_13/_article  
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* Yoshinori Takao,  Masataka Sakamoto, Koji Eriguchi, and Kouichi Ono: "Investigation of Plasma Characteristics and Ion Beam Extraction for a Micro RF Ion Thruster," Trans. JSASS Aerospace Tech. Japan '''12''' ists29 (Dec 2014) Pb_13-Pb_18. [[doi:10.2322/tastj.12.Pb_13]]. https://www.jstage.jst.go.jp/article/tastj/12/ists29/12_Pb_13/_article  
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* Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao and Kouichi Ono:"Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors", Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DE02.[[doi:10.7567/JJAP.53.03DE02]]. http://iopscience.iop.org/1347-4065/53/3S2/03DE02
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* Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao and Kouichi Ono:"Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors," Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DE02.[[doi:10.7567/JJAP.53.03DE02]]. http://iopscience.iop.org/1347-4065/53/3S2/03DE02
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* Masayuki Kamei, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2 and high-k gate dielectrics", Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DF02. [[doi:10.7567/JJAP.53.03DF02]]. http://iopscience.iop.org/1347-4065/53/3S2/03DF02
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* Masayuki Kamei, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2 and high-k gate dielectrics," Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DF02. [[doi:10.7567/JJAP.53.03DF02]]. http://iopscience.iop.org/1347-4065/53/3S2/03DF02
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* Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate", Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DF01. [[doi:10.7567/JJAP.53.03DF01]]. http://iopscience.iop.org/1347-4065/53/3S2/03DF01
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* Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono:"Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate," Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DF01. [[doi:10.7567/JJAP.53.03DF01]]. http://iopscience.iop.org/1347-4065/53/3S2/03DF01
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* T. Okumura, K. Eriguchi, M. Saitoh, and H. Kawaura, "Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage", Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DG01.
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* T. Okumura, K. Eriguchi, M. Saitoh, and H. Kawaura, "Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage," Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DG01.
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* Masao Noma, Koji Eriguchi, Yoshinori Takao, Nobuyuki Terayama, and Kouichi Ono:"Structural, mechanical, and electrical properties of cubic boron nitride thin films deposited by magnetically enhanced plasma ion plating method", Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DB02. [[doi:10.7567/JJAP.53.03DB02]]. http://iopscience.iop.org/1347-4065/53/3S2/03DB02
+
* Masao Noma, Koji Eriguchi, Yoshinori Takao, Nobuyuki Terayama, and Kouichi Ono:"Structural, mechanical, and electrical properties of cubic boron nitride thin films deposited by magnetically enhanced plasma ion plating method," Jpn. J. Appl. Phys. '''53''' (Mar 2014) 03DB02. [[doi:10.7567/JJAP.53.03DB02]]. http://iopscience.iop.org/1347-4065/53/3S2/03DB02
  
 
==2012==
 
==2012==
−
* K. Eriguchi, M. Kamei, Y. Takao, and K. Ono: "High-k MOSFET performance degradation by plasma process-induced charging damage" 2012 IEEE International Integrated Reliability Workshop Final Report, pp. 80-84 (2012).
+
* K. Eriguchi, M. Kamei, Y. Takao, and K. Ono: "High-k MOSFET performance degradation by plasma process-induced charging damage," 2012 IEEE International Integrated Reliability Workshop Final Report, pp. 80-84 (2012).
−
* Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effect of capacitive coupling in a miniature inductively coupled plasma source", J. Appl. Phys. '''112'''(9) (Nov 2012) 093306.  {{red|<JAP Research Highlights>}} {{KURENAI|http://hdl.handle.net/2433/161047}} [[doi: 10.1063/1.4764333]]. http://link.aip.org/link/?JAP/112/093306
+
* Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effect of capacitive coupling in a miniature inductively coupled plasma source," J. Appl. Phys. '''112'''(9) (Nov 2012) 093306.  {{red|<JAP Research Highlights>}} {{KURENAI|http://hdl.handle.net/2433/161047}} [[doi: 10.1063/1.4764333]]. http://link.aip.org/link/?JAP/112/093306
−
* Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence”, Jpn. J. Appl. Phys. '''51''' (Aug 2012) 08HC01. [[doi: 10.1143/JJAP.51.08HC01]]. http://jjap.jsap.jp/link?JJAP/51/08HC01/
+
* Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence,” Jpn. J. Appl. Phys. '''51''' (Aug 2012) 08HC01. [[doi: 10.1143/JJAP.51.08HC01]]. http://jjap.jsap.jp/link?JJAP/51/08HC01/
  
 
==2011==
 
==2011==
−
* Koji Eriguchi, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-''k'' Metal–Oxide–Semiconductor Field-Effect Transistor", Jpn. J. Appl. Phys. '''50'''(10) (Oct 2011) 10PG02. [[doi: 10.1143/JJAP.50.10PG02]]. http://jjap.jsap.jp/link?JJAP/50/10PG02/
+
* Koji Eriguchi, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-''k'' Metal–Oxide–Semiconductor Field-Effect Transistor," Jpn. J. Appl. Phys. '''50'''(10) (Oct 2011) 10PG02. [[doi: 10.1143/JJAP.50.10PG02]]. http://jjap.jsap.jp/link?JJAP/50/10PG02/
−
* Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas", Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KB02. [[doi: 10.1143/JJAP.50.08KB02]]. http://jjap.jsap.jp/link?JJAP/50/08KB02/
+
* Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas," Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KB02. [[doi: 10.1143/JJAP.50.08KB02]]. http://jjap.jsap.jp/link?JJAP/50/08KB02/
−
* Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KD03. [[doi: 10.1143/JJAP.50.08KD03]]. http://jjap.jsap.jp/link?JJAP/50/08KD03/
+
* Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy," Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KD03. [[doi: 10.1143/JJAP.50.08KD03]]. http://jjap.jsap.jp/link?JJAP/50/08KD03/
−
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology", Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KD04. [[doi: 10.1143/JJAP.50.08KD04]]. http://jjap.jsap.jp/link?JJAP/50/08KD04/
+
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology," Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KD04. [[doi: 10.1143/JJAP.50.08KD04]]. http://jjap.jsap.jp/link?JJAP/50/08KD04/
−
* Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Comparative Study of Plasma-Charging Damage in High-k Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KD05. [[doi: 10.1143/JJAP.50.08KD05]]. http://jjap.jsap.jp/link?JJAP/50/08KD05/
+
* Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Comparative Study of Plasma-Charging Damage in High-k Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors," Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08KD05. [[doi: 10.1143/JJAP.50.08KD05]]. http://jjap.jsap.jp/link?JJAP/50/08KD05/
−
* Hirotaka Tsuda, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness", Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08JE06. [[doi: 10.1143/JJAP.50.08JE06]]. http://jjap.jsap.jp/link?JJAP/50/08JE06/
+
* Hirotaka Tsuda, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness," Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08JE06. [[doi: 10.1143/JJAP.50.08JE06]]. http://jjap.jsap.jp/link?JJAP/50/08JE06/
−
* Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching", Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08JE04. [[doi: 10.1143/JJAP.50.08JE04]]. http://jjap.jsap.jp/link?JJAP/50/08JE04/
+
* Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching," Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08JE04. [[doi: 10.1143/JJAP.50.08JE04]]. http://jjap.jsap.jp/link?JJAP/50/08JE04/
−
* Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges", Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08JC02. [[doi: 10.1143/JJAP.50.08JC02]]. http://jjap.jsap.jp/link?JJAP/50/08JC02/
+
* Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges," Jpn. J. Appl. Phys. '''50'''(8) (Aug 2011) 08JC02. [[doi: 10.1143/JJAP.50.08JC02]]. http://jjap.jsap.jp/link?JJAP/50/08JC02/
−
* Takeshi Takahashi, Yoshinori Takao, Yugo Ichida, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster with helium and hydrogen propellants", Phys. Plasmas '''18'''(6) (Jun 2011) 063505. {{KURENAI|http://hdl.handle.net/2433/141937}} [[doi: 10.1063/1.3596539]]. http://link.aip.org/link/?PHP/18/063505
+
* Takeshi Takahashi, Yoshinori Takao, Yugo Ichida, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster with helium and hydrogen propellants," Phys. Plasmas '''18'''(6) (Jun 2011) 063505. {{KURENAI|http://hdl.handle.net/2433/141937}} [[doi: 10.1063/1.3596539]]. http://link.aip.org/link/?PHP/18/063505
−
* Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices", J. Vac. Sci. Technol. A '''29'''(4) (Jun 2011) 041303. {{KURENAI|http://hdl.handle.net/2433/141939}} [[doi: 10.1116/1.3598382]]. http://link.aip.org/link/?JVA/29/041303/1
+
* Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices," J. Vac. Sci. Technol. A '''29'''(4) (Jun 2011) 041303. {{KURENAI|http://hdl.handle.net/2433/141939}} [[doi: 10.1116/1.3598382]]. http://link.aip.org/link/?JVA/29/041303/1
−
* Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono, Masaki Minami, Fumikatsu Uesawa, and Tetsuya Tatsumi: "Structural and electrical characterization of HBr/O2 plasma damage to Si substrate", J. Vac. Sci. Technol. A '''29'''(4) (Jun 2011) 041301. [[doi: 10.1116/1.3596606]]. http://link.aip.org/link/?JVA/29/041301/1
+
* Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono, Masaki Minami, Fumikatsu Uesawa, and Tetsuya Tatsumi: "Structural and electrical characterization of HBr/O2 plasma damage to Si substrate," J. Vac. Sci. Technol. A '''29'''(4) (Jun 2011) 041301. [[doi: 10.1116/1.3596606]]. http://link.aip.org/link/?JVA/29/041301/1
−
* Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching", AIP Conf. Proc. '''1333''' (May 2011) 1051. {{KURENAI|http://hdl.handle.net/2433/141787}} [[doi: 10.1063/1.3562784]]. http://link.aip.org/link/?APCPCS/1333/1051/1
+
* Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching," AIP Conf. Proc. '''1333''' (May 2011) 1051. {{KURENAI|http://hdl.handle.net/2433/141787}} [[doi: 10.1063/1.3562784]]. http://link.aip.org/link/?APCPCS/1333/1051/1
  
 
==2010==
 
==2010==
−
* Yoshinori Takao, Naoki Kusaba, Koji Eriguchi, and Kouichi Ono: "Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source", J. Appl. Phys. '''108'''(9) (Nov 2010) 093309. {{KURENAI|http://hdl.handle.net/2433/134553}} [[doi: 10.1063/1.3506536]]. http://link.aip.org/link/?JAP/108/093309/
+
* Yoshinori Takao, Naoki Kusaba, Koji Eriguchi, and Kouichi Ono: "Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source," J. Appl. Phys. '''108'''(9) (Nov 2010) 093309. {{KURENAI|http://hdl.handle.net/2433/134553}} [[doi: 10.1063/1.3506536]]. http://link.aip.org/link/?JAP/108/093309/
−
* Takumi Saegusa, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires", Jpn. J. Appl. Phys. '''49''' (2010) 095204. [[doi:10.1143/JJAP.49.095204]]. http://jjap.ipap.jp/link?JJAP/49/095204/
+
* Takumi Saegusa, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires," Jpn. J. Appl. Phys. '''49''' (2010) 095204. [[doi:10.1143/JJAP.49.095204]]. http://jjap.ipap.jp/link?JJAP/49/095204/
−
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. '''49''' (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
+
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors," Jpn. J. Appl. Phys. '''49''' (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
−
* Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring", Jpn. J. Appl. Phys. '''49''' (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
+
* Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring," Jpn. J. Appl. Phys. '''49''' (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
−
* Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity", Jpn. J. Appl. Phys. '''49''' (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
+
* Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity," Jpn. J. Appl. Phys. '''49''' (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
−
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. '''49''' (2010) 056203. {{red|<JJAP Spotlights>}} http://jjap.ipap.jp/link?JJAP/49/056203/
+
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates," Jpn. J. Appl. Phys. '''49''' (2010) 056203. {{red|<JJAP Spotlights>}} http://jjap.ipap.jp/link?JJAP/49/056203/
−
* Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, and Kouichi Ono: "Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films", J. Appl. Phys. '''107'''(1) (2010) 014518. {{KURENAI|http://hdl.handle.net/2433/137215}} http://link.aip.org/link/JAPIAU/v107/i1/p014518/s1
+
* Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, and Kouichi Ono: "Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films," J. Appl. Phys. '''107'''(1) (2010) 014518. {{KURENAI|http://hdl.handle.net/2433/137215}} http://link.aip.org/link/JAPIAU/v107/i1/p014518/s1
−
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. '''49''' (2010) 04DA18. http://jjap.ipap.jp/link?JJAP/49/04DA18/
+
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors," Jpn. J. Appl. Phys. '''49''' (2010) 04DA18. http://jjap.ipap.jp/link?JJAP/49/04DA18/
−
* Kouichi Ono, Hiroaki Ohta, and Koji Eriguchi: "Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study", Thin Solid Films '''518'''(13) (2010) 3461-3468. [[doi:10.1016/j.tsf.2009.11.030]]
+
* Kouichi Ono, Hiroaki Ohta, and Koji Eriguchi: "Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study," Thin Solid Films '''518'''(13) (2010) 3461-3468. [[doi:10.1016/j.tsf.2009.11.030]]
−
* Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing", Thin Solid Films '''518'''(13) (2010) 3469-3474. [[doi:10.1016/j.tsf.2009.11.042]]
+
* Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing," Thin Solid Films '''518'''(13) (2010) 3469-3474. [[doi:10.1016/j.tsf.2009.11.042]]
−
* Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue", Thin Solid Films '''518'''(13) (2010) 3475-3480. [[doi:10.1016/j.tsf.2009.11.043]]
+
* Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue," Thin Solid Films '''518'''(13) (2010) 3475-3480. [[doi:10.1016/j.tsf.2009.11.043]]
−
* Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis", Thin Solid Films '''518'''(13) (2010) 3481-3486. [[doi:10.1016/j.tsf.2009.11.044]]
+
* Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis," Thin Solid Films '''518'''(13) (2010) 3481-3486. [[doi:10.1016/j.tsf.2009.11.044]]
  
 
==2009==
 
==2009==
−
* Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of a Microwave-Excited Microplasma Thruster", Trans. Japan Soc. Aero. Space Sci., Space Technol. Japan '''7''' ists26 (Dec 2009) Pb_135. http://www.jstage.jst.go.jp/article/tstj/7/ists26/7_Pb_135/_article
+
* Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of a Microwave-Excited Microplasma Thruster," Trans. Japan Soc. Aero. Space Sci., Space Technol. Japan '''7''' ists26 (Dec 2009) Pb_135. http://www.jstage.jst.go.jp/article/tstj/7/ists26/7_Pb_135/_article
−
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs", IEEE Electron Dev. Lett. '''31'''(12) (Dec 2009) 1275-1277. {{KURENAI|http://hdl.handle.net/2433/89515}} [[doi:10.1109/LED.2009.2033726]]
+
* Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs," IEEE Electron Dev. Lett. '''31'''(12) (Dec 2009) 1275-1277. {{KURENAI|http://hdl.handle.net/2433/89515}} [[doi:10.1109/LED.2009.2033726]]
−
* Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology", Appl. Phys. Express '''2''' (Nov 2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/
+
* Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology," Appl. Phys. Express '''2''' (Nov 2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/
−
* Hiroshi Fukumoto, Koji Eriguchi, and Kouichi Ono: "Effects of Mask Pattern Geometry on Plasma Etching Profiles", Jpn. J. Appl. Phys. '''48'''(9) (Sep 2009) 096001. http://jjap.ipap.jp/link?JJAP/48/096001/
+
* Hiroshi Fukumoto, Koji Eriguchi, and Kouichi Ono: "Effects of Mask Pattern Geometry on Plasma Etching Profiles," Jpn. J. Appl. Phys. '''48'''(9) (Sep 2009) 096001. http://jjap.ipap.jp/link?JJAP/48/096001/
−
* Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono : "Plasma chemical behaviour of reactants and reaction products during inductively coupled CF<sub>4</sub> plasma etching of SiO<sub>2</sub>", Plasma Sources Sci. Technol. '''18'''(4) (Sep 2009) 045027. http://dx.doi.org/10.1088/0963-0252/18/4/045027
+
* Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono : "Plasma chemical behaviour of reactants and reaction products during inductively coupled CF<sub>4</sub> plasma etching of SiO<sub>2</sub>," Plasma Sources Sci. Technol. '''18'''(4) (Sep 2009) 045027. http://dx.doi.org/10.1088/0963-0252/18/4/045027
−
* Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster", Phys. Plasmas '''16'''(8) (Aug 2009) 083505. {{KURENAI|http://hdl.handle.net/2433/137214}} http://link.aip.org/link/?PHP/16/083505
+
* Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster," Phys. Plasmas '''16'''(8) (Aug 2009) 083505. {{KURENAI|http://hdl.handle.net/2433/137214}} http://link.aip.org/link/?PHP/16/083505
−
* Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical Study on Si Etching by Monatomic Br<sup>+</sup>/Cl<sup>+</sup> Beams and Diatomic Br<sub>2</sub><sup>+</sup>/Cl<sub>2</sub><sup>+</sup>/HBr<sup>+</sup> Beams", Jpn. J. Appl. Phys. '''48'''(7) (Jul 2009) 070219. http://jjap.ipap.jp/link?JJAP/48/070219/
+
* Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical Study on Si Etching by Monatomic Br<sup>+</sup>/Cl<sup>+</sup> Beams and Diatomic Br<sub>2</sub><sup>+</sup>/Cl<sub>2</sub><sup>+</sup>/HBr<sup>+</sup> Beams," Jpn. J. Appl. Phys. '''48'''(7) (Jul 2009) 070219. http://jjap.ipap.jp/link?JJAP/48/070219/
−
* Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Dev. Lett. '''30'''(7) (Jul 2009) 712-714. [[doi:10.1109/LED.2009.2022347]]
+
* Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation," IEEE Electron Dev. Lett. '''30'''(7) (Jul 2009) 712-714. [[doi:10.1109/LED.2009.2022347]]
−
* Hiroaki Ohta, Tatsuya Nagaoka, Koji Eriguchi, and Kouichi Ono: "An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations", Jpn. J. Appl. Phys. '''48'''(2) (Feb 2009) 020225. http://jjap.ipap.jp/link?JJAP/48/020225/
+
* Hiroaki Ohta, Tatsuya Nagaoka, Koji Eriguchi, and Kouichi Ono: "An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations," Jpn. J. Appl. Phys. '''48'''(2) (Feb 2009) 020225. http://jjap.ipap.jp/link?JJAP/48/020225/
−
* Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr<sup>+</sup>", J. Appl. Phys. '''105'''(2) (Jan 2009) 023302. {{KURENAI|http://hdl.handle.net/2433/203167}} http://link.aip.org/link/?JAPIAU/105/023302/1
+
* Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr<sup>+</sup>," J. Appl. Phys. '''105'''(2) (Jan 2009) 023302. {{KURENAI|http://hdl.handle.net/2433/203167}} http://link.aip.org/link/?JAPIAU/105/023302/1
−
* Keisuke Nakamura, Daisuke Hamada, Yoshinori Ueda, Koji Eriguchi, and Kouichi Ono: "Selective Etching of High-k Dielectric HfO<sub>2</sub> Films over Si in BCl<sub>3</sub>-Containing Plasmas without rf Biasing", Appl. Phys. Express '''2'''(1) (Jan 2009) 016503. http://apex.ipap.jp/link?APEX/2/016503/
+
* Keisuke Nakamura, Daisuke Hamada, Yoshinori Ueda, Koji Eriguchi, and Kouichi Ono: "Selective Etching of High-k Dielectric HfO<sub>2</sub> Films over Si in BCl<sub>3</sub>-Containing Plasmas without rf Biasing," Appl. Phys. Express '''2'''(1) (Jan 2009) 016503. http://apex.ipap.jp/link?APEX/2/016503/
−
* Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, Hiroaki Ohta, and Kouichi Ono: "Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method", Appl. Phys. Lett. '''94'''(1) (Jan 2009) 013507. {{KURENAI|http://hdl.handle.net/2433/137216}} http://link.aip.org/link/?APPLAB/94/013507/1
+
* Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, Hiroaki Ohta, and Kouichi Ono: "Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method," Appl. Phys. Lett. '''94'''(1) (Jan 2009) 013507. {{KURENAI|http://hdl.handle.net/2433/137216}} http://link.aip.org/link/?APPLAB/94/013507/1
  
 
==2008==
 
==2008==
−
* Akira Iwakawa, Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics simulation of Si etching by off-normal Cl<sup>+</sup> bombardment at high neutral-to-ion flux ratios", Jpn. J. Appl. Phys. '''47'''(11) (Nov 2008) 8560-8564. http://jjap.ipap.jp/link?JJAP/47/8560
+
* Akira Iwakawa, Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics simulation of Si etching by off-normal Cl<sup>+</sup> bombardment at high neutral-to-ion flux ratios," Jpn. J. Appl. Phys. '''47'''(11) (Nov 2008) 8560-8564. https://iopscience.iop.org/article/10.1143/JJAP.47.8560/meta
−
* Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow", J. Phys. D: Appl. Phys. '''41'''(19) (Oct 2008) 194005. http://stacks.iop.org/0022-3727/41/194005
+
* Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow," J. Phys. D: Appl. Phys. '''41'''(19) (Oct 2008) 194005. http://stacks.iop.org/0022-3727/41/194005
−
* Hiroaki Ohta, Akira Iwakawa, Koji Eriguchi, and Kouichi Ono: "An Interatomic Potential Model for Molecular Dynamics Simulation of Silicon Etching by Br<sup>+</sup>-containing Plasmas", J. Appl. Phys. '''104'''(7) (Oct 2008) 073302. {{KURENAI|http://hdl.handle.net/2433/203168}} http://link.aip.org/link/?JAPIAU/104/073302/1
+
* Hiroaki Ohta, Akira Iwakawa, Koji Eriguchi, and Kouichi Ono: "An Interatomic Potential Model for Molecular Dynamics Simulation of Silicon Etching by Br<sup>+</sup>-containing Plasmas," J. Appl. Phys. '''104'''(7) (Oct 2008) 073302. {{KURENAI|http://hdl.handle.net/2433/203168}} http://link.aip.org/link/?JAPIAU/104/073302/1
−
* Yoshinori Takao, Takeshi Takahashi, Koji Eriguchi and Kouichi Ono: "Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects", Pure Appl. Chem. '''80'''(9) (Sep 2008) 2013-2023. http://www.iupac.org/publications/pac/80/9/2013/
+
* Yoshinori Takao, Takeshi Takahashi, Koji Eriguchi and Kouichi Ono: "Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects," Pure Appl. Chem. '''80'''(9) (Sep 2008) 2013-2023. http://www.iupac.org/publications/pac/80/9/2013/
−
* Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers ", Jpn. J. Appl. Phys. '''47'''(4) (Aug 2008) 2446-2451. http://jjap.ipap.jp/link?JJAP/47/2446
+
* Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers," Jpn. J. Appl. Phys. '''47'''(4) (Aug 2008) 2446-2451. http://jjap.ipap.jp/link?JJAP/47/2446
−
* Yuichi Setsuhara, Daisuke Tsukiyama, Kosuke Takenaka, and Koichi Ono: "Simulation-Aided Designing of Meter-Scale Large-Area Plasma Source with Multiple Low-Inductance Antenna Modules", Jpn. J. Appl. Phys. '''47'''(8) (Aug 2008) 6903-6906. http://jjap.ipap.jp/link?JJAP/47/6903
+
* Yuichi Setsuhara, Daisuke Tsukiyama, Kosuke Takenaka, and Koichi Ono: "Simulation-Aided Designing of Meter-Scale Large-Area Plasma Source with Multiple Low-Inductance Antenna Modules," Jpn. J. Appl. Phys. '''47'''(8) (Aug 2008) 6903-6906. http://jjap.ipap.jp/link?JJAP/47/6903
−
* Yugo Osano and Kouichi Ono: "Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles", J. Vac. Sci. Technol. B '''26'''(4) (Aug 2008) 1425-1439. {{KURENAI|http://hdl.handle.net/2433/203169}} http://dx.doi.org/10.1116/1.2958240
+
* Yugo Osano and Kouichi Ono: "Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles," J. Vac. Sci. Technol. B '''26'''(4) (Aug 2008) 1425-1439. {{KURENAI|http://hdl.handle.net/2433/203169}} http://dx.doi.org/10.1116/1.2958240
−
* Akira Iwakawa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical investigation on the origin of microscopic surface roughness during Si etching by chemically reactive plasmas", Jpn. J. Appl. Phys. '''47'''(8) (Aug 2008) 6464-6466. http://jjap.ipap.jp/link?JJAP/47/6464
+
* Akira Iwakawa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical investigation on the origin of microscopic surface roughness during Si etching by chemically reactive plasmas," Jpn. J. Appl. Phys. '''47'''(8) (Aug 2008) 6464-6466. https://iopscience.iop.org/article/10.1143/JJAP.47.6464
−
* Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, and Kouichi Ono: "Estimation of defect generation probability in thin Si surface damaged layer during plasma processing", Thin Solid Films '''516'''(19) (Aug 2008) 6604-6608. http://dx.doi.org/10.1016/j.tsf.2007.11.035
+
* Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, and Kouichi Ono: "Estimation of defect generation probability in thin Si surface damaged layer during plasma processing," Thin Solid Films '''516'''(19) (Aug 2008) 6604-6608. http://dx.doi.org/10.1016/j.tsf.2007.11.035
−
* Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono : "Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics", Jpn. J. Appl. Phys. '''47'''(4) (Apr 2008) 2369-2374. http://jjap.ipap.jp/link?JJAP/47/2369
+
* Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono : "Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics," Jpn. J. Appl. Phys. '''47'''(4) (Apr 2008) 2369-2374. http://jjap.ipap.jp/link?JJAP/47/2369
−
* Koji Eriguchi and Kouichi Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices", J. Phys. D: Appl. Phys. '''41'''(2) (Jan 2008) 024002. http://dx.doi.org/10.1088/0022-3727/41/2/024002
+
* Koji Eriguchi and Kouichi Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices," J. Phys. D: Appl. Phys. '''41'''(2) (Jan 2008) 024002. http://dx.doi.org/10.1088/0022-3727/41/2/024002
  
 
==2007==
 
==2007==
−
*Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis", J. Appl. Phys. '''101'''(12) (Jun 2007) 123307. {{KURENAI|http://hdl.handle.net/2433/134554}}  http://link.aip.org/link/?JAPIAU/101/123307/1
+
*Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis," J. Appl. Phys. '''101'''(12) (Jun 2007) 123307. {{KURENAI|http://hdl.handle.net/2433/134554}}  http://link.aip.org/link/?JAPIAU/101/123307/1
  
 
==2006==
 
==2006==
−
* Yoshinori Takao, Kouichi Ono, Kazuo Takahashi and Koji Eriguchi : "Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster", Jpn. J. Appl. Phys. '''45'''(10B) (Oct 2006) 8235-8240.
+
* Yoshinori Takao, Kouichi Ono, Kazuo Takahashi and Koji Eriguchi : "Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster," Jpn. J. Appl. Phys. '''45'''(10B) (Oct 2006) 8235-8240.
−
* Yugo Osano, Masahito Mori, Naoshi Itabashi, Kazuo Takahashi, Koji Eriguchi and Kouichi Ono : "A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl<sub>2</sub>/O<sub>2</sub> Plasmas", Jpn. J. Appl. Phys. '''45'''(10B) (Oct 2006) 8157-8162.
+
* Yugo Osano, Masahito Mori, Naoshi Itabashi, Kazuo Takahashi, Koji Eriguchi and Kouichi Ono : "A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl<sub>2</sub>/O<sub>2</sub> Plasmas," Jpn. J. Appl. Phys. '''45'''(10B) (Oct 2006) 8157-8162.
 +
 
 +
 
 +
<!--
 
* Kosuke Takenaka, Yuichi Setsuhara, Kazuaki Nishisaka, Akinori Ebe, Shinya Sugiura, Kazuo Takahashi, and Koichi Ono: "Characterization of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Units", Jpn. J. Appl. Phys. '''45'''(10B) (Oct 2006) 8046-8049.
 
* Kosuke Takenaka, Yuichi Setsuhara, Kazuaki Nishisaka, Akinori Ebe, Shinya Sugiura, Kazuo Takahashi, and Koichi Ono: "Characterization of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Units", Jpn. J. Appl. Phys. '''45'''(10B) (Oct 2006) 8046-8049.
 
* Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, and Kouichi Ono: "Plasma etching of high-k and metal gate materials", Vacuum '''80'''(7) (May 2006) 761-767.
 
* Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, and Kouichi Ono: "Plasma etching of high-k and metal gate materials", Vacuum '''80'''(7) (May 2006) 761-767.
109行： 154行：
 
* Yoshinori Takao and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited plasmas: a numerical design consideration", Plasma Sources Sci. Technol. '''15'''(2) (Mar 2006) 211-227.
 
* Yoshinori Takao and Kouichi Ono: "A miniature electrothermal thruster using microwave-excited plasmas: a numerical design consideration", Plasma Sources Sci. Technol. '''15'''(2) (Mar 2006) 211-227.
  
−
<!-- ==2005==
+
==2005==
 
*Yugo Osano and Kouichi Ono: "An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching", Jpn. J. Appl. Phys. '''44'''(12) (Dec 2005) 8650-8660.
 
*Yugo Osano and Kouichi Ono: "An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching", Jpn. J. Appl. Phys. '''44'''(12) (Dec 2005) 8650-8660.
 
* Kazuo Takahashi, Kouichi Ono, and Yuichi Setsuhara: "Etching characteristics of high-k dielectrif HfO<sub>2</sub> thin films in inductively coupled fluorocarbon plasmas", J. Vac. Sci. Technol. A '''23'''(6) (Oct 2005) 1691-1967. {{KURENAI|http://hdl.handle.net/2433/203171}}
 
* Kazuo Takahashi, Kouichi Ono, and Yuichi Setsuhara: "Etching characteristics of high-k dielectrif HfO<sub>2</sub> thin films in inductively coupled fluorocarbon plasmas", J. Vac. Sci. Technol. A '''23'''(6) (Oct 2005) 1691-1967. {{KURENAI|http://hdl.handle.net/2433/203171}}

2024年2月13日 (火) 18:28時点における最新版

写真 Arturo Donate

目次

Paper.png 学術論文

2024

  • Keiichiro Urabe, Minami Toyoda, Yoshinori Matsuoka, and Koji Eriguchi: “Investigation of small-fraction molecular impurities in high-pressure helium plasmas using optical plasma diagnostic methods”, Plasma Sources Sci. Technol. 33, 025011 (2024). <doi:10.1088/1361-6595/ad1f38>

2023

  • Junki Morozumi, Takahiro Goya, Tomohiro Kuyama, Koji Eriguchi, and Keiichiro Urabe: “In situ electrical monitoring of SiO2/Si structures in low-temperature plasma using impedance spectroscopy”, Jpn. J. Appl. Phys. 62, SI1010 (2023). <doi:10.35848/1347-4065/acc7ae>

2022

  • Yoshihiro Sato, Satoshi Shibata, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami, Keiichiro Urabe, and Koji Eriguchi: "Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution," J. Vac. Sci. Technol. B 40, 062209 (2022). <doi: 10.1116/6.0002181>
  • Seiya Kito, Keiichiro Urabe, and Koji Eriguchi: "Multi-harmonic analysis in a floating harmonic probe method for diagnostics of electron energy and ion density in low-temperature plasmas", Japanese Journal of Applied Physics 61, 106002 (2022). <doi: 10.35848/1347-4065/ac87e1>
  • Yoshihiro Sato, Satoshi Shibata, Takayoshi Yamada, Kazuko Nishimura, Masayuku Yamasaki, Masashi Murakami, Keiichiro Urabe, and Koji Eriguchi: "Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage," IEEE Journal of the Electron Devices Society 10, 769 (2022). <doi: 10.1109/JEDS.2022.3176321>
  • Takayuki Matsuda, Takashi Hamano, Yuya Asamoto, Masao Noma, Michiru Yamashita, Shigehiko Hasegawa, Keiichiro Urabe, and Koji Eriguchi: “Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique,” Jpn. J. Appl. Phys. 61, Sl1014 (2022). <doi:10.35848/1347-4065/ac5d16>
  • Tomohiro Kuyama, Keiichiro Urabe, and Koji Eriguchi, "Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis," Journal of Applied Physics 131, 133302 (2022).<doi:10.1063/5.0085042>
  • Takashi Hamano, Takayuki Matsuda, Yuya Asamoto, Masao Noma, Shigehiko Hasegawa, Michiru Yamashita, Keiichiro Urabe, and Koji Eriguchi, “Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method,” Appl. Phys. Lett. 120, 031904 (2022). <doi:10.1063/5.0077147>

2021

  • Masahito Mori, Shoki Irie, Yugo Osano, Koji Eriguchi, and Kouichi Ono, "Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas," J. Vac. Sci. Technol. A 39, 043002 (2021).
  • Koji Eriguchi, "Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage," Jpn. J. Appl. Phys. 60, 040101 (2021). [INVITED REVIEW]<doi:10.35848/1347-4065/abe47c>

2020

  • Tomohiro Kuyama, Keiichiro Urabe, Masanaga Fukasawa, Tetsuya Tatsumi, and Koji Eriguchi, "Characterization of dynamic behaviors of defects in Si substrates created by H2 plasma using conductance method," Jpn. J. Appl. Phys. 59, SJJC02 (2020), <doi:10.35848/1347-4065/ab8280>
  • Florent P. Sainct, Keiichiro Urabe, Erwan Pannier, Deanna A. Lacoste, and Christophe O. Laux: “Electron number density measurements in nanosecond repetitively pulsed discharges in water vapor at atmospheric pressure," Plasma Sources Sci. Technol. 29, 025018 (2020). <doi: 10.1088/1361-6595/ab681b>
  • Tsuyoshi Akiyama, Michael A. Zeeland, Thomas N. Carlstrom, Rejean L. Boivin, Kai J. Brunner, Jens Knauer, Ryo Yasuhara, Kenji Tanaka, Hai-Qing Liu, Yan Zhou, Naoyuki Oyama, Antoine Sirinelli, Keiichiro Urabe, and Naoki Shirai: “Recent progress on dispersion interferometers for nuclear fusion and low-temperature plasmas," J. Instrum. 126, C01004 (2020). <doi: 10.1088/1748-0221/15/01/C01004>
  • Yoshihiro Sato, Satoshi Shibata, Keiichiro Urabe, and Koji Eriguchi: “Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions,” J. Vac. Sci. Technol. B 38, 012205 (2020). <picked up at a newsletter [Beneath the AVS Surface], Feb. 2020> <doi: 10.1116/1.5126344>

2019

  • Taro Ikeda, Akira Tanihara, Nobuhiko Yamamoto, and Koji Eriguchi: “Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma," J. Appl. Phys. 126, 083304 (2019). <doi:10.1063/1.5083937>
  • Takashi Hamano, Keiichiro Urabe, and Koji Eriguchi: “Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance-voltage characteristics,” J. Phys. D: Appl. Phys. 52, 455102 (2019). <doi: 10.1088/1361-6463/ab3550>
  • Tomoya Higuchi, Masao Noma, Michiru Yamashita, Keiichiro Urabe, Shigehiko Hasegawa, and Koji Eriguchi, "Characterization of surface modification mechanisms for boron nitride films under plasma exposure," Surface and Coatings Technol. 377, 124854 (2019). <doi: 10.1016/j.surfcoat.2019.07.071>
  • Masahito Mori, Yugo Osano, Shoki Irie, Koji Eriguchi, and Kouichi Ono, "Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas," J. Vac. Sci. Technol. A 37, 051301 (2019). <doi:10.1116/1.5091673>
  • Koji Eriguchi, Takashi Hamano, and Keiichiro Urabe, "Improvement of the plasma‐induced defect generation model in Si substrates and the optimization design framework," Plasma Process. Polym. 16, 1900058 (2019). <doi:10.1002/ppap.201900058>
  • Takeshi Takahashi, Daisuke Mori, Tetsuo Kawanabe, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Microplasma thruster powered by X-band microwaves," J. Appl. Phys. 125, 083301 (2019). <doi:10.1063/1.5054790>
  • Yoshihiro Sato, Satoshi Shibata, Akira Uedono, Keiichiro Urabe, and Koji Eriguchi, "Characterization of the distribution of defects introduced by plasma exposure in Si substrate," J. Vac. Sci. Technol. A 37, 011304 (2019). <doi:10.1116/1.5048027>
  • Hitoshi Muneoka, Shohei Himeno, Keiichiro Urabe, Sven Stauss, Motoyoshi Baba, Tohru Suemoto, and Kazuo Terashima, "Dynamics of cavitation bubbles formed by pulsed-laser ablation plasmas near the critical point of CO2," J. Phys. D: Appl. Phys. 52, 025201 (2019). <doi:10.1088/1361-6463/aae44a>

2018

  • Takumi Hatsuse, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection," J. Appl. Phys. 124, 143301 (2018). <doi:10.1063/1.5041846>
  • Tomohiro Kuyama and Koji Eriguchi, "Optical and electrical characterization methods of plasma-induced damage in silicon nitride films," Jpn. J. Appl. Phys. 57, 06JD03 (2018). <doi:10.7567/JJAP.57.06JD03>
  • Yuta Yoshikawa and Koji Eriguchi, "First-principles predictions of electronic structure change in plasma-damaged materials," Jpn. J. Appl. Phys. 57, 06JD04 (2018). <doi:10.7567/JJAP.57.06JD04>
  • Takashi Hamano and Koji Eriguchi, "Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas," Jpn. J. Appl. Phys. 57, 06JD02 (2018). <doi:10.7567/JJAP.57.06JD02>
  • Nobuya Nakazaki, Haruka Matsumoto, Soma Sonobe, Takumi Hatsuse, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Ripple formation on Si surfaces during plasma etching in Cl2," AIP Adv. 8, 055027 (2018). <doi:10.1063/1.5017070>

2017

  • Koji Eriguchi, "Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage," J. Phys. D: Appl. Phys. 50, No. 33, pp.333001, (2017), <doi:10.1088/1361-6463/aa7523>
  • Kouichi Ono, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, and Koji Eriguchi, "Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation,” J. Phys. D: Appl. Phys. 50, 414001 (2017), <doi: 10.1088/1361-6463/aa8523>
  • Koji Eriguchi and Yukimasa Okada, "Electrical characterization of carrier trapping behavior of defects created by plasma exposures," J. Phys. D: Appl. Phys. 50, No. 26, 26LT01, (2017), <doi:10.1088/1361-6463/aa731a>
  • Yukimasa Okada, Kouichi Ono and Koji Eriguchi, "An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement," Jpn. J. Appl. Phys. 56, No. 6S2, 06HD04, (2017), <doi:10.7567/JJAP.56.06HD04>
  • Koji Eriguchi, "Defect generation in electronic devices under plasma exposure: Plasma-induced damage," Jpn. J. Appl. Phys. 56, No. 6S2, 06HA01, (2017), <doi:10.7567/JJAP.56.06HA01>
  • Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing," Jpn. J. Appl. Phys. 56, No. 6S2, 06HD03, (2017), <doi:10.7567/JJAP.56.06HD03>
  • Kentaro Nishida, Kouichi Ono and Koji Eriguchi, "Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films," Jpn. J. Appl. Phys. 56, No. 6S2, 06HD01, (2017), <doi:10.7567/JJAP.56.06HD01>
  • Z. Wei and K. Eriguchi, "Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation," IEEE Trans. Electron Devices 64, No. 5, 2201-2206 (2017), <doi: 10.1109/ted.2017.2681104>

2016

  • Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono, "Surface smoothing during plasma etching of Si in Cl2," Appl. Phys. Lett. 109, 204101 (2016), <doi: 10.1063/1.4967474>
  • Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono,"Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring," Jpn. J. Appl. Phys. 55, No. 6S2, 06HB04 (2016),<doi:10.7567/JJAP.55.06HB04>

2015

  • Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals," J. Appl. Phys. 118, 233304 (2015).  PDF KURENAI repository   doi:10.1063/1.4937449. http://dx.doi.org/10.1063/1.4937449
    Publisher's Note: J. Appl. Phys. 119, 059901 (2016). doi:10.1063/1.4941034. http://dx.doi.org/10.1063/1.4941034
  • Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2," Appl. Phys. Express. 8, 066201 (2015). <APEX Spotlights> doi:10.7567/APEX.8.066201. http://iopscience.iop.org/1882-0786/8/6/066201
  • Takaaki Iwai, Koji Eriguchi, Shohei Yamauchi, Naotaka Noro, Junichi Kitagawa, and Kouichi Ono: "Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate," J. Vac. Sci. Technol. A 33, 061403 (2015). doi:10.1116/1.4927128. http://dx.doi.org/10.1116/1.4927128
  • Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate," ECS Journal of Solid State Science and Technology, 4(6), N5077-N5083 (2015). doi:10.1149/2.0121506jss.
  • Koji Eriguchi and Kouichi Ono: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability," Microelectronics Reliability 55, 1464-1470 (2015).

2014

2012

  • K. Eriguchi, M. Kamei, Y. Takao, and K. Ono: "High-k MOSFET performance degradation by plasma process-induced charging damage," 2012 IEEE International Integrated Reliability Workshop Final Report, pp. 80-84 (2012).
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Effect of capacitive coupling in a miniature inductively coupled plasma source," J. Appl. Phys. 112(9) (Nov 2012) 093306. <JAP Research Highlights>  PDF KURENAI repository   doi: 10.1063/1.4764333. http://link.aip.org/link/?JAP/112/093306
  • Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence,” Jpn. J. Appl. Phys. 51 (Aug 2012) 08HC01. doi: 10.1143/JJAP.51.08HC01. http://jjap.jsap.jp/link?JJAP/51/08HC01/

2011

2010

  • Yoshinori Takao, Naoki Kusaba, Koji Eriguchi, and Kouichi Ono: "Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source," J. Appl. Phys. 108(9) (Nov 2010) 093309.  PDF KURENAI repository   doi: 10.1063/1.3506536. http://link.aip.org/link/?JAP/108/093309/
  • Takumi Saegusa, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires," Jpn. J. Appl. Phys. 49 (2010) 095204. doi:10.1143/JJAP.49.095204. http://jjap.ipap.jp/link?JJAP/49/095204/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors," Jpn. J. Appl. Phys. 49 (2010) 08JC02. http://jjap.ipap.jp/link?JJAP/49/08JC02/
  • Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring," Jpn. J. Appl. Phys. 49 (2010) 08JD02. http://jjap.ipap.jp/link?JJAP/49/08JD02/
  • Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity," Jpn. J. Appl. Phys. 49 (2010) 08JE01. http://jjap.ipap.jp/link?JJAP/49/08JE01/
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates," Jpn. J. Appl. Phys. 49 (2010) 056203. <JJAP Spotlights> http://jjap.ipap.jp/link?JJAP/49/056203/
  • Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, and Kouichi Ono: "Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films," J. Appl. Phys. 107(1) (2010) 014518.  PDF KURENAI repository   http://link.aip.org/link/JAPIAU/v107/i1/p014518/s1
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors," Jpn. J. Appl. Phys. 49 (2010) 04DA18. http://jjap.ipap.jp/link?JJAP/49/04DA18/
  • Kouichi Ono, Hiroaki Ohta, and Koji Eriguchi: "Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study," Thin Solid Films 518(13) (2010) 3461-3468. doi:10.1016/j.tsf.2009.11.030
  • Masayuki Kamei, Yoshinori Nakakubo, Koji Eriguchi, and Kouichi Ono: "Bias frequency dependence of pn junction charging damage induced by plasma processing," Thin Solid Films 518(13) (2010) 3469-3474. doi:10.1016/j.tsf.2009.11.042
  • Hirotaka Tsuda, Masahiko Mori, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue," Thin Solid Films 518(13) (2010) 3475-3480. doi:10.1016/j.tsf.2009.11.043
  • Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis," Thin Solid Films 518(13) (2010) 3481-3486. doi:10.1016/j.tsf.2009.11.044

2009

  • Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of a Microwave-Excited Microplasma Thruster," Trans. Japan Soc. Aero. Space Sci., Space Technol. Japan 7 ists26 (Dec 2009) Pb_135. http://www.jstage.jst.go.jp/article/tstj/7/ists26/7_Pb_135/_article
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs," IEEE Electron Dev. Lett. 31(12) (Dec 2009) 1275-1277.  PDF KURENAI repository   doi:10.1109/LED.2009.2033726
  • Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology," Appl. Phys. Express 2 (Nov 2009) 116501. http://apex.ipap.jp/link?APEX/2/116501/
  • Hiroshi Fukumoto, Koji Eriguchi, and Kouichi Ono: "Effects of Mask Pattern Geometry on Plasma Etching Profiles," Jpn. J. Appl. Phys. 48(9) (Sep 2009) 096001. http://jjap.ipap.jp/link?JJAP/48/096001/
  • Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono : "Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2," Plasma Sources Sci. Technol. 18(4) (Sep 2009) 045027. http://dx.doi.org/10.1088/0963-0252/18/4/045027
  • Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster," Phys. Plasmas 16(8) (Aug 2009) 083505.  PDF KURENAI repository   http://link.aip.org/link/?PHP/16/083505
  • Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical Study on Si Etching by Monatomic Br+/Cl+ Beams and Diatomic Br2+/Cl2+/HBr+ Beams," Jpn. J. Appl. Phys. 48(7) (Jul 2009) 070219. http://jjap.ipap.jp/link?JJAP/48/070219/
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta and Kouichi Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation," IEEE Electron Dev. Lett. 30(7) (Jul 2009) 712-714. doi:10.1109/LED.2009.2022347
  • Hiroaki Ohta, Tatsuya Nagaoka, Koji Eriguchi, and Kouichi Ono: "An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations," Jpn. J. Appl. Phys. 48(2) (Feb 2009) 020225. http://jjap.ipap.jp/link?JJAP/48/020225/
  • Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+," J. Appl. Phys. 105(2) (Jan 2009) 023302.  PDF KURENAI repository   http://link.aip.org/link/?JAPIAU/105/023302/1
  • Keisuke Nakamura, Daisuke Hamada, Yoshinori Ueda, Koji Eriguchi, and Kouichi Ono: "Selective Etching of High-k Dielectric HfO2 Films over Si in BCl3-Containing Plasmas without rf Biasing," Appl. Phys. Express 2(1) (Jan 2009) 016503. http://apex.ipap.jp/link?APEX/2/016503/
  • Koji Eriguchi, Zhiqiang Wei, Takeshi Takagi, Hiroaki Ohta, and Kouichi Ono: "Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method," Appl. Phys. Lett. 94(1) (Jan 2009) 013507.  PDF KURENAI repository   http://link.aip.org/link/?APPLAB/94/013507/1

2008

  • Akira Iwakawa, Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics simulation of Si etching by off-normal Cl+ bombardment at high neutral-to-ion flux ratios," Jpn. J. Appl. Phys. 47(11) (Nov 2008) 8560-8564. https://iopscience.iop.org/article/10.1143/JJAP.47.8560/meta
  • Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow," J. Phys. D: Appl. Phys. 41(19) (Oct 2008) 194005. http://stacks.iop.org/0022-3727/41/194005
  • Hiroaki Ohta, Akira Iwakawa, Koji Eriguchi, and Kouichi Ono: "An Interatomic Potential Model for Molecular Dynamics Simulation of Silicon Etching by Br+-containing Plasmas," J. Appl. Phys. 104(7) (Oct 2008) 073302.  PDF KURENAI repository   http://link.aip.org/link/?JAPIAU/104/073302/1
  • Yoshinori Takao, Takeshi Takahashi, Koji Eriguchi and Kouichi Ono: "Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects," Pure Appl. Chem. 80(9) (Sep 2008) 2013-2023. http://www.iupac.org/publications/pac/80/9/2013/
  • Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers," Jpn. J. Appl. Phys. 47(4) (Aug 2008) 2446-2451. http://jjap.ipap.jp/link?JJAP/47/2446
  • Yuichi Setsuhara, Daisuke Tsukiyama, Kosuke Takenaka, and Koichi Ono: "Simulation-Aided Designing of Meter-Scale Large-Area Plasma Source with Multiple Low-Inductance Antenna Modules," Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6903-6906. http://jjap.ipap.jp/link?JJAP/47/6903
  • Yugo Osano and Kouichi Ono: "Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles," J. Vac. Sci. Technol. B 26(4) (Aug 2008) 1425-1439.  PDF KURENAI repository   http://dx.doi.org/10.1116/1.2958240
  • Akira Iwakawa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Numerical investigation on the origin of microscopic surface roughness during Si etching by chemically reactive plasmas," Jpn. J. Appl. Phys. 47(8) (Aug 2008) 6464-6466. https://iopscience.iop.org/article/10.1143/JJAP.47.6464
  • Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, and Kouichi Ono: "Estimation of defect generation probability in thin Si surface damaged layer during plasma processing," Thin Solid Films 516(19) (Aug 2008) 6604-6608. http://dx.doi.org/10.1016/j.tsf.2007.11.035
  • Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono : "Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics," Jpn. J. Appl. Phys. 47(4) (Apr 2008) 2369-2374. http://jjap.ipap.jp/link?JJAP/47/2369
  • Koji Eriguchi and Kouichi Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices," J. Phys. D: Appl. Phys. 41(2) (Jan 2008) 024002. http://dx.doi.org/10.1088/0022-3727/41/2/024002

2007

2006

  • Yoshinori Takao, Kouichi Ono, Kazuo Takahashi and Koji Eriguchi : "Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster," Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8235-8240.
  • Yugo Osano, Masahito Mori, Naoshi Itabashi, Kazuo Takahashi, Koji Eriguchi and Kouichi Ono : "A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl2/O2 Plasmas," Jpn. J. Appl. Phys. 45(10B) (Oct 2006) 8157-8162.
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