2012年8月7日 (火) 18:11時点における最新版

このページには、古い（3年より前の）国際会議発表履歴を記録しています。

関連ページ

International conferences （最近の履歴）

Domestic conferences archive

2008

• Takumi Saegusa (M), Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Heat conduction in naked, H-terminated, and native-oxide-coated Si nanowires", 2008 Material Research Society (MRS) Fall Meeting, December 1-5, 2008, Boston, MA, USA, LL4.18.
• K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, K. Ishikawa, M. Yoshimaru, and K. Ono: "A New Framework for Performance Prediction of Advanced MOSFETs with Plasma-Induced Recess Structure and Latent Defect Site", IEEE International Electron Devices Meeting (IEDM), 2008, December 15-17, 2008, San Francisco, CA, USA. 2008 IEDM Technical Digest, 2008, pp. 1-4.
• H. Fukumoto (D), H. Ohta, K. Eriguchi, and K. Ono: "Effects of Etching-Mask Geometry and Charging on Etching Profile Evolution", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP24.
• H. Ohta, T. Nagaoka, K. Eriguchi, and K. Ono: "A Novel Interatomic Potential Model for MD Simulation of Si Etching by Cl⁺/B⁺ Containing Plasmas", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP20.
• T. Nagaoka (M), H. Ohta, K. Eriguchi, and K. Ono: "Molecular Dynamics Simulation of Si Etching by Monoenergetic Br⁺, Br₂⁺, H⁺, and HBr⁺ Ions Generated in HBr Plasmas", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP19 .
• Y. Nakakubo (M), A. Matsuda, Y. Ueda, H. Ohta, K. Eriguchi, and K. Ono: "Clarification of Surface and Interface Structures exposed to Inductively Coupled Plasma with Various Superposed Bias Frequencies and Its Implication in Plasma Damage Control", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS1-WeM4 .
• Yoshinori Ueda (M), Keisuke Nakamura, Hiroaki Kiyokami, Hiroaki Ohta, Koji Eriguchi, Kouichi Ono: "Threshold energy for plasma etching of high-k dielectric HfO₂ films in BCl₃-containing plasmas", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, TX, USA, XF1.00002. Bull. Am. Phys. Soc. 53(10), 2008, p. 94.
• H. Ohta, T. Nagaoka, A. Iwakawa, K. Eriguchi, K. Ono: "Quantitative improvement in MD-based plasma etching simulator: Si etching by halogen-including plasmas", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, WF3.00003. Bull. Am. Phys. Soc. 53(10), 2008, p. 92.
• Hirotaka Tsuda (M), Shoki Irie, Masahito Mori, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching in chlorine- and bromine-containing plasmas: Effects of surface oxidation on evolution of feature profiles", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, DT1.00003 . Bull. Am. Phys. Soc. 53(10), 2008, p. 18.
• Asahiko Matsuda (M), Yoshinori Nakakubo, Yoshinori Ueda, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-13. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 358-359.
• Tatsuya Nagaoka (M), Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale simulation of Si etching by energetic Br⁺ and Br₂⁺ ions for the analysis of Gate- or STI-etching processes", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-1. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 334-335.
• H. Ohta, A. Iwakawa, K. Eriguchi, and K. Ono: "Atomic-scale Simulation of Silicon Etching by Bromine-containing Plasmas", 26th International Rarefied Gas Dynamics Symposium (RGD26), July 21-25, 2008, Kyoto University, Kyoto, Japan, 25-1-B.
• Y. Nakakubo (M), A. Matsuda, M. Kamei, H. Ohta, K. Eriguchi and K. Ono: "Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 101-104.
• K. Eriguchi, M. Kamei, K. Okada, H. Ohta and K. Ono: "Threshold Voltage Shift Instability Induced by Plasma Charging Damage in MOSFETs with High-k Dielectric", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 97-100.
• Yugo Ichida (M), Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant", 26th International Symposium on Space Technology and Science (ISTS 2008), June 2-8, 2008, Act City Hamamatsu, Japan, b-20. ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science, 2008, .
• Takeshi Takahashi (D), Yugo Ichida, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Numerical Simulation of a Microwave-Excited Microplasma Thruster", 26th International Symposium on Space Technology and Science (ISTS 2008), June 2-8, 2008, Act City Hamamatsu, Japan, b-17. ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science, 2008, .

2007

• M. Mori, S. Irie, N. Itabashi, K. Eriguchi, K. Ono: "A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 7-8.
• Y. Ueda, K. Nakamura, D. Hamada, M. Yoshida, K. Eriguchi, K. Ono: "Selective etching of high-k dielectric HfO₂ films in BCl₃-containing plasmas without rf biasing", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 283-284.
• Y. Nakakubo, Y. Ueda, M. Yoshida, D. Hamada, M. Kamei, K. Eriguchi, K. Ono: "Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 287-288.
• D. Hamada, K. Nakamura, Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Comparative Study of ECR and ICP Plasma Etching of High-k Dielectric HfO₂ Films with BCl₃-Containing Gas Chemistries", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA8.
• M. Kamei, K. Eriguchi, H. Fukumoto, K. Ono: "Plasma source-dependent charging damage polarities in the performance degradation of MOSFETs with Hf-based high-k gate dielectrics", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA10.
• K. Eriguchi, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Ions and Si Surface Interactions - Estimation of Plasma-Induced Defect Generation Probability", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS2-WeM5.
• H. Fukumoto, K. Eriguchi, K. Ono: "Geometrical Effects on Etching Profile Evolution", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS1-ThM6.
• S. Irie, M. Mori, N. Itabashi, K. Eriguchi, K. Ono: "Model Analysis of the Ion Reflection on Surfaces and the Profile Evolution during Etching of Si in Chlorine-and Bromine-Containing Plasmas", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-FrM9.
• Kouichi Ono: "Microwave-Excited Microplasma Thruster: A Numerical and Experimental Study of the Plasma Generation and Micronozzle Flow" (Invited), 4th International Workshop on Microplasmas 2007, October 28-31, 2007, Tainan City, Taiwan, FO-004.
• S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Atomic-scale model analysis of the feature profile evoltion during Si etching in chlorine- and bromine-containing plasmas", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 17.
• Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Analysis of plasma-surface interactions during plasma etching by in-situ diagnostics of reactants and reaction products", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 19.
• K. Eriguchi, M. Kamei, D. Hamada, K. Okada, K. Ono: "A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO₂ Gate Dielectrics", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, A-6-3. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
• K. Eriguchi, A. Ohno, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-17. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical Analysis and Experiments of a Microwave-excited Microplasma Thruster", 30th International Electric Propulsion Conference, September 17-20, 2007, Florence, Italy, IEPC-2007-29.
• Kouichi Ono: "Micro plasma thruster for ultra small satellites: Plasma chemical and aerodynamical aspects" (Invited), 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 29C-a1.
• S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-25.
• D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-26.
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-123.
• H. Fukumoto, K. Eriguchi, K. Ono: "Effects of geometrically different microstructures on etching profiles", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 30C-p6.
• Kouichi Ono: "Plasma Etching" (Invited), IUPAC Summer School on Plasma Chemistry for Materials Processing, August 23-25, 2007, Kyoto, Japan. IUPAC Summer School on Plasma Chemistry for Materials Processing Lecture Notes, pp. 123-145.
• M. Kamei, K. Eriguchi, K. Okada, K. Ono: "Investigation of Junction Characteristics of MOSFETs with High-k Gate Stack by Plasma Processing", International Conference on IC Design and Technology (ICICDT 2007), May 30-June 1, 2007, Austin, TX, USA. Proc. of 2007 Int. Conf. Integrated Circuit Design and Technology, pp. 117-120.
• S. Irie, Y. Osano, M. Nori, K. Eriguchi, K. Ono: "Atomic-scale Model for Feature Profile Evolution during Chlorine- and Bromine-Containing Plasma Etching of Si ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-4. p. 13.
• D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of High-k Dielectric HfO₂ in BCl₃-Containing Plasmas without RF Biasing ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-5. p. 14.
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Microwave-Excited Micro Plasma Thruster ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-6. p. 15.