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京大推進研

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===2023===
 
===2023===
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*[[Member:takahashi|R. Takahashi]](M), [[Member:kito|S. Kito]], [[Member:eriguchi|K. Eriguchi]], and [[Member:urabe|K. Urabe]]: "Time-resolved laser-induced fluorescence spectroscopy with a continuous-wave diode laser for the investigation of ion sheath dynamics" [https://lapd20.nifs.ac.jp/ 20th International Symposium on Laser-Aided Plasma Diagnostics: LAPD20], September 10-14, 2023, Kyoto Garden Palace Hotel, Kyoto, Japan.
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*[[Member:toyoda|M. Toyoda]](M), [[Member:matsuoka y|Y. Matsuoka]], [[Member:eriguchi|K. Eriguchi]], and [[Member:urabe|K. Urabe]]: "Behaviors of optical emission from a dielectric barrier discharge in a He gas flow with small-fraction H2O impurity" [https://www.ispc25.com/ 25th International Symposium on PlasmaChemistry: ISPC25], May 21-26, 2023, Miyako Messe, Kyoto, Japan.
 
*[[Member:toyoda|M. Toyoda]](M), [[Member:matsuoka y|Y. Matsuoka]], [[Member:eriguchi|K. Eriguchi]], and [[Member:urabe|K. Urabe]]: "Behaviors of optical emission from a dielectric barrier discharge in a He gas flow with small-fraction H2O impurity" [https://www.ispc25.com/ 25th International Symposium on PlasmaChemistry: ISPC25], May 21-26, 2023, Miyako Messe, Kyoto, Japan.
  

2023年9月14日 (木) 00:09時点における版

写真 DPS 2011
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国際会議発表一覧 （過去10年間）

(Showing presentations in the last 10 years)

目次

2023

2022

2021

2020

  • Y. Sato(D), T. Yamada, K. Nishimura, M. Yamasaki, M. Murakami, K. Urabe, and K. Eriguchi: "Characterization Scheme for Plasma-Induced Defect due to Stochastic Lateral Straggling in Si Substrates for Ultra-Low Leakage Devices," IEEE International Electron Devices Meeting (IEDM) 2020/12/14, 9.4 (On-line)
  • [Tutorial] K. Eriguchi: "Plasma-induced Damage—Modeling and Characterizations," International Symposium on Semiconductor Manufacturing (ISSM 2020), Tutorial (Dec. 15th, On-line)
  • [Invited] K. Urabe: "Influence of Gas-Refractive-Index Dispersion on Measurement of Electron Density Using Dispersion Interferometry", The 29th Int. Toki. Conf. on Plasma and Fusion Research (ITC-29), I24, (Online / Toki, Japan (Hybrid), Oct. 30, 2020).
  • T. Hamano(D), K. Urabe, and K. Eriguchi: "A Framework for Sensitive Assessment of Plasma Process-Induced Damage in Si Substrates", 2020 International Conference on Solid State Devices and Materials: SSDM2020, September 27-30, 2020, ALL-VIRTUAL. Proc. 52nd International Conference on Solid State Devices and Materials (SSDM), 705-706 (2020).
  • T. Hamano(D), K. Urabe, and K. Eriguchi: "Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance", International Conference on Simulation of Semiconductor Processes and Devices, September 23-October 6, 2020, ALL-VIRTUAL.
  • [Tutorial] K. Eriguchi: "Plasma-induced Damage—Modeling, Characterizations, and Design Methodologies", IEEE Int. Reliability Physics Symp. (IRPS 2020), Tutorial: TSA.2, 2020 (May, On-line).

2019

2018

2017

  • Y. Yoshikawa(M) and K. Eriguchi: “Prediction of electronic structure change induced by plasma processing: A first-principles study”, 39th International Symposium on Dry Process: DPS2017, November 16-17, 2017, Tokyo Tech Front, Tokyo Institute of Technology, Tokyo, Japan. Proc. 39th International Symposium on Dry Process (DPS), 217-218 (2017).
  • T. Kuyama(M) and K. Eriguchi: “Characterization technique of silicon nitride film damaged by plasma exposure”, 39th International Symposium on Dry Process: DPS2017, November 16-17, 2017, Tokyo Tech Front, Tokyo Institute of Technology, Tokyo, Japan. Proc. 39th International Symposium on Dry Process (DPS), 75-76 (2017).
  • T. Hamano(B) and K. Eriguchi: "A comprehensive analysis of progressive behavior of plasma-induced damage formation in Si substrates", 39th International Symposium on Dry Process: DPS2017, November 16-17, 2017, Tokyo Tech Front (Kuramae Kaikan), Tokyo Institute of Technology, Tokyo, Japan. Proc. 39th International Symposium on Dry Process (DPS), 215-216 (2017).
  • Y. Sato(D), S. Shibata, R. Sakaida, and K. Eriguchi: "Characterization of Residual Defects in Plasma-exposed Si Substrates using Cathodoluminescence and Positron Annihilation Spectroscopy ", 17th International Workshop on Junction Technology 2017, pp. 73-76 (Kyoto, Japan, June 2nd, 2017).
  • [Invited] K. Eriguchi: "Defect Generation in Si substrates during Plasma Processing", 17th International Workshop on Junction Technology 2017, pp. 69-72 (Kyoto, Japan, June 2nd, 2017).
  • [Invited] K. Eriguchi: "Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices", 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (Hernstein, Austria, May 24th, 2017).

2016

  • Z. Wei, Y. Katoh, S.Ogasahara, Y. Yoshimoto, K. Kawai, Y. Ikeda, K. Eriguchi, K.Ohmori, and S. Yoneda: "True Random Number Generator using Current Difference based on a Fractional Stochastic Model in 40-nm Embedded ReRAM", IEEE International Electron Device Meeting (IEDM) 2016, pp. 107-110 (2016).
  • [Invited] M. Noma, K. Eriguchi, M. Yamashita, and S. Hasegawa: "Coatings of Boron Nitride Films for Vacuum Tribology by Reactive Plasma Assisted Coating (RePAC) Technology—Friction coefficient lowering under vacuum—", 7th Tsukuba International Coating Symposium (TICS7), pp. 26-27 (Tsukuba, Japan, Dec. 8th, 2016).
  • Yukimasa Okada(M), Kouichi Ono, and Koji Eriguchi: "A new damage evaluation scheme predicting the nature of defects-an advanced capacitance-voltage technique", 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 23-24 (2016).
  • Kentaro Nishida(M), Kouichi Ono, and Koji Eriguchi: "An optical model for in-line analysis of plasma-induced interlayer dielectric damage", 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 81-82 (2016).
  • Kengo Shinohara(M), Kentaro Nishida, Kouichi Ono, and Koji Eriguchi: "Effects of plasma exposure on leakage and reliability parameters of dielectric film: New measures of damage?", 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 27-28 (2016).
  • Tomoya Higuchi(M), Yukimasa Okada, Kouichi Ono, and Koji Eriguchi: "Defect profiling of plasma-damaged layer by surface-controlled photoreflectance spectroscopy, 38th International Symposium on Dry Process: DPS2016, November 21-22, 2016, Conference Hall, Hokkaido University, Sapporo, Hokkaido, Japan. Proc. 38th International Symposium on Dry Process (DPS), 83-84 (2016).
  • M. Noma, K. Eriguchi, M. Yamashita, and S. Hasegawa: “Friction Coefficient Lowering in High-hardness Boron Nitride Films Under Ultra-high Vacuum”, AVS 63rd International Symposium & Exhibition (Nashville, TN, USA), TR+BI+SE+TF-ThA8 (2016).
  • M. Noma, M. Yamashita, K. Eriguchi, and S. Hasegawa: “Formation of superhard c-BN films on the body and edge of cutting tools by reactive plasma-assisted coating (RePAC)”, The 16th International Conference on Precision Engineering (Hamamatsu, Japan), P41-8147 (2016).

2015

  • Z. Wei, K. Eriguchi, S. Muraoka, K. Katayama, R. Yasuhara, K. Kawai, Y. Ikeda, M. Yoshimura, Y. Hayakawa, K. Shimakawa, T. Mikawa, S. Yoneda: "Distribution Projecting the Reliability for 40 nm ReRAM and beyond based on Stochastic Differential Equation", IEEE International Electron Device Meeting (IEDM) 2015, pp. 177-180 (2015).
  • Nobuya Nakazaki(D), Haruka Matsumoto, Soma Sonobe, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 13-14 (2015).
  • Chihiro Takeshita(M), Ikumi Yamada, Yutaro Hirano, Kenkichi Nishimura, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "Silicon Nanowire Groeth on Si and SiO2 Substrate by Plasma Sputtering", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 139-140 (2015).
  • Yukimasa Okada(M), Koji Eriguchi and Kouichi Ono: "Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 211-212 (2015).
  • Kentaro Nishida(M), Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono: "A new evaluation method to characterize low-k dielectric damage during plasma processing", 37th International Symposium on Dry Process: DPS2015, November 5-6, 2015, Awaji Yumebutai International Conference Center, Awaji Island, Japan. Proc. 36th International Symposium on Dry Process (DPS), 213-214 (2015).
  • Koji Eriguchi, Masayuki Kamei, Yoshinori Nakakubo, and Kouichi Ono: "Role of Plasma Density in Damage Characterization and its Impact on Low-Damage Plasma Process Design", AVS 62nd International Symposium & Exhibition, October 18-23, 2015, San Jose Convention Center, California, PS+AS+SS-WeA-10.
  • [Invited] Kouichi Ono: "Plasma-induced Surface Roughening and Ripple Formation during Plasma Etching of Silicon", AVS 62nd International Symposium & Exhibition, October 18-23, 2015, San Jose Convention Center, California, PS2-TuA-7.
  • Nobuya Nakazaki(D), Haruka Matsumoto, Koji Eriguchi, and Kouichi Ono: "Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates", 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing,Monday–Friday, October 12–16, 2015; Honolulu, Hawaii, OR2.4, Bull. Am. Phys. Soc. 60(9) p. 118.
  • [Invited] Kouichi Ono: "Plasma-surface interactions for top-down and bottom-up nanofabrication", 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing,Monday–Friday, October 12–16, 2015; Honolulu, Hawaii, JW1.1, Bull. Am. Phys. Soc. 60(9) p. 70.
  • [Invited] Koji Eriguchi: "Impacts of plasma process-induced damage on MOSFET parameter variability and reliability", The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (Oct. 7th 2015, Toulouse, France).
  • Keisuke Ueno(M), Daisuke Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle-in-Cell Simulation of a Micro ECR Plasma Thruster", 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing,Monday–Friday, October 12–16, 2015; Honolulu, Hawaii, DT1.4, Bull. Am. Phys. Soc. 60(9) p. 14.
  • Keisuke Ueno(M), Daisuke Mori, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle-in-Cell Simulation of a Micro ECR Plasma Thruster", 30th International Symposium on Space Technology and Science (ISTS 2015),34th International Electric Propulsion Conference (IEPC 2015),6th Nano-satellite Symposium, July 4-10, 2015, Kobe, Japan, IEPC-2015-240/ISTS-2015-b-240.
  • Takuya Kobatake(M), Masanori Deguchi, Junya Suzuki, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Optical Diagnostics of Plasma Evolution and Induced Air Flows in Dielectric Barrier Discharge Plasma Actuator", 30th International Symposium on Space Technology and Science (ISTS 2015),34th International Electric Propulsion Conference (IEPC 2015),6th Nano-satellite Symposium,July 4-10, 2015, Kobe, Japan, 2015-e-17.
  • Y. Okada(M), K. Eriguchi, and K. Ono: "Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing", IEEE Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), June 2-3, 2015, Leuven, Belgium.
  • T. Ikeda, A. Tanihara, N. Yamamoto, S. Kasai, K. Eriguchi, and K. Ono: "Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout", IEEE Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), June 2-3, 2015, Leuven, Belgium.
  • Z. Wei, K. Eriguchi, K. Katayama, S. Muraoka, R. Yasuhara, and T. Mikawa: "A New Prediction Method for ReRAM Data Retention Statistics based on 3D Filament Structures", IEEE Int. Reliability Physics Symp (IRPS), 5B.4.1-5B.4.4, April 21-23, 2015, Monterey, California.
  • [Invited] Koji Eriguchi: "Modeling of Plasma-induced Damage in Advanced Transistors in ULSI Circuits", Semiconductor Equipment and Materials International (SEMI) Korea, Technology Symposium 2015, Feb. 5th, 2015, Korea.

2014

  • Nobuya Nakazaki(D), Haruka Matsumoto, Koji Eriguchi, Kouichi Ono: "Surface Roughening Mechanisms and Roughness Suppression during Si Etching in Inductively Coupled Cl2 Plasmas", AVS 61st International Symposium & Exhibition, November 09-14, 2014, the Baltimore Convention Center, Baltimore, Maryland, PS1-WeM-12.
  • Koji Eriguchi, Masao Noma (SHINKO SEIKI CO., LTD., Japan), Shigehiko Hasegawa (Osaka University, Japan), Michiru Yamashita (Hyogo Prefectural Institute of Tech., Japan), Kouichi Ono: "A Novel Reactive Plasma-Assisted Coating Technique (RePAC) for Thin BN/Crystalline-Si Structures and their Mechanical and Electrical Properties", AVS 61st International Symposium & Exhibition, November 09-14, 2014, the Baltimore Convention Center, Baltimore, Maryland, SE+NS+TR-TuM-3.
  • Nobuya Nakazaki(D), Koji Eriguchi, and Kouichi Ono: "Molecular dynamics analysis of silicon chloride ion incidence during Si etching in Cl-based plasmas: Effects of ion incident energy, angle, and neutral radical-to-ion flux ratio", The 67th Annual Gaseous Electronics Conference (GEC), November 02-07, 2014, Marriott City Center & Raleigh Convention Center, Raleigh, North Carolina, ET2-5, Bull. Am. Phys. Soc. 59(9) p. 26.
  • [Invited] Koji Eriguchi: "Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits---A model prediction of damage in three dimensional structures", The 67th Annual Gaseous Electronics Conference (GEC), November 02-07, 2014, Marriott City Center & Raleigh Convention Center, Raleigh, North Carolina, ET2-4, Bull. Am. Phys. Soc. 59(9) p. 25.
  • Takuya kobatake(M), Masanori Deguchi, junya Suzuki, Koji Eriguchi, and Kouichi Ono: "Optical Diagnostics of Air Flows Induced in Surface Dielectric Barrier Discharge Plasma Actuator", The 67th Annual Gaseous Electronics Conference (GEC), November 02-07, 2014, Marriott City Center & Raleigh Convention Center, Raleigh, North Carolina, CT2-4, Bull. Am. Phys. Soc. 59(9) p. 17.
  • K. Eriguchi and K. Ono: "A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs", Proc. 36th International Symposium on Dry Process (DPS), 19-20 (2014).
  • M. Fukasawa, K. Eriguchi, K. Nagahata, K. Ono, and T. Tatsumi: "Systematic comparison of various analytical techniques for evaluating plasma-induced damage recovery", Proc. 36th International Symposium on Dry Process (DPS), 133-134 (2014).
  • M. Noma, K. Eriguchi, S. Hasegawa, M. Yamashita, and K. Ono: "Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method", Proc. 36th International Symposium on Dry Process (DPS), 51-52 (2014).
  • T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, and K. Ono: "Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface", Proc. 36th International Symposium on Dry Process (DPS), 135-136 (2014).
  • T. Ikeda, K. Eriguchi, A. Tanihara, S. Kasai, and K. Ono: "Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation -", Proc. 36th International Symposium on Dry Process (DPS), 131-132 (2014).
  • M. Kamei, Y. Takao, K. Eriguchi, and K. Ono: "TDDB Lifetime Enhancement of High-k MOSFETs Damaged by Plasma Processing – Conflicting Results in Plasma Charging Damage Evaluation", IEEE International Integrated Reliability Workshop (IIRW), 6.1, (2014).
  • Koji Eriguchi, Yoshinori Takao, Kouichi Ono: "A New Aspect of Plasma‐Induced Physical Damage in Three‐Dimensional Scaled Structures", IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), May 30th (2014).
  • Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, Kouichi Ono: "Random Telegraph Noise as a New Measure of Plasma‐Induced Charging Damage in MOSFETs", IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), May 30th (2014).
  • K. Eriguchi, Y. Takao, K. Ono:"Plasma-Induced Damage in 3D Structures behind Device Scaling", Plasma Etch and Strip in Microtechnology (PESM), May 11th (2014), France.
  • M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N.Terayama, K. Ono:"Effects of ion-bombardment damage on mechanical properties of c-BN thin films formed by a magnetically-enhanced plasma ion plating method", The 6th Int. Symp. Adv. Plasma Sci. and its Application for Nitrides and Nanomaterials / 7th Int. Conf. on Plasma Nano-Technol. & Sci.(March 5th, 2014), 05pP48.
  • M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N.Terayama, K. Ono:"Impacts of plasma process parameters on mechanical properties of c-BN thin-films", The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 5B-AM-O2 (Feb. 5th, 2014).
  • Nobuya Nakazaki(D), Yoshinori Takao, Koji Eriguchi, Kouichi Ono: "Surface roughening during Si etching in inductively coupled Cl2 plasmas", 8th International Conference on Reactive Plasmas, 31st Symposium on Plasma Processing, February 3-7, 2014 Fukuoka Convention Center, Fukuoka, Japan, 4B-PM-O2.

2013

  • Nobuya Nakazaki(D), Yoshinori Takao, Koji Eriguchi, Kouichi Ono: "Molecular Dynamics Analysis of Si Etching in HBr-based Plasmas: Ion Incident Energy and Angle Dependence", AVS 60th International Symposium & Exhibition, October 27-November 1, 2013, the Long Beach Convention Center, California, USA, PS-ThM-1.
  • Asahiko Matsuda(D alum.), Yoshinori Nakakubo, Masanaga Fukasawa (Sony Corporation, Japan), Yoshinori Takao, Koji Eriguchi, Tetsuya Tatsumi (Sony Corporation, Japan), Kouichi Ono: "Effects of Plasma-Induced Si Damage Structures on Annealing Process Design—Gas Chemistry Impact", AVS 60th International Symposium & Exhibition, October 27-November 1, 2013, the Long Beach Convention Center, California, USA, PS-MoM-1.
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Molecular dynamics simulation of plasma-induced Si substrate damage: Latent defect structures and bias-frequency effects", The 66th Annual Gaseous Electronics Conference (GEC), September 30-October 4, 2013, the Westin Hotel, Princeton, New Jersey, NR2-3, Bull. Am. Phys. Soc. 58(8) p. 96.
  • Nobuya Nakazaki(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Effects of Etch By-Products Ion Incidence", The 66th Annual Gaseous Electronics Conference (GEC), September 30-October 4, 2013, the Westin Hotel, Princeton, New Jersey, LW1-6, Bull. Am. Phys. Soc. 58(8) p. 71.
  • Junya Suzuki(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Airflows Induced by Asymmetric Bipolar Voltage Pulses in Dielectric Barrier Discharge Plasma Actuator", The 66th Annual Gaseous Electronics Conference (GEC), September 30-October 4, 2013, the Westin Hotel, Princeton, New Jersey, CT1-83, Bull. Am. Phys. Soc. 58(8) p. 31.
  • Asahiko Matsuda(D alum.), Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "μ-Photoreflectance Spectroscopy for Microscale Monitoring of Plasma-induced Physical Damage", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, A-2, Proc. 35th Int. Symp. Dry Process, p. 9.
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Scenario of plasma-induced physical damage in FinFET - the effects of "straggling" of incident ions by a range theory -", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, G-1, Proc. 35th Int. Symp. Dry Process, p. 181.
  • Nobuya Nakazaki(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular dynamics analysis of Si etching in HBr-based Plasmas: Effects of neutral radicals", 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, P-74, Proc. 35th Int. Symp. Dry Process, p. 159.
  • M. Noma, K. Eriguchi, Y. Takao, N. Terayama, and K. Ono: "Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique", Proc. 35th International Symposium on Dry Process (DPS), pp. 39-40 (2013).
  • T. Okumura, K. Eriguchi, M. Saitoh, and H. Kawaura: "Recovery of Plasma-Induced Si Substrate Damage Using Atmospheric Thermal Plasma" Proc. Proc. 35th International Symposium on Dry Process (DPS), pp. 41-42 (2013).
  • [Invited] Kouichi Ono: "Plasma Etch Challenges for Nanoscale Device Fabrication: Modeling, Analysis, and Control of Plasma-Surface Interactions", 9th Asian--European International Conference on Plasma Surface Engineering (AEPSE2013), August 26-30, 2013 / 35th International Symposium on Dry Process (DPS 2013), August 29-30, 2013, Ramada Plaza Jeju Hotel, Korea, Plenary-2, Proc. 35th Int. Symp. Dry Process, p. 47.
  • Tomoki Hazama(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Basic Study on Plasma Characteristics of ECR Discharges Toward High Power Electric Propulsion", 29th International Symposium on Space Technology and Science (ISTS 2013), June 2-9, 2013, Nagoya Congress Center, Nagoya, Aichi, Japan, s-11-b, Proc. 29th ISTS, 2013, pp. 2013-s-11-b.
  • Yoshinori Takao, Masataka Sakamoto, Koji Eriguchi, and Kouichi Ono: "Investigation of Plasma Characteristics and Ion Beam Extraction for a Micro RF Ion Thruster", 29th International Symposium on Space Technology and Science (ISTS 2013), June 2-9, 2013, Nagoya Congress Center, Nagoya, Aichi, Japan, b-19, Proc. 29th ISTS, 2013, pp. 2013-b-19.
  • Daisuke Mori(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microplasma Thruster Using Electron Cyclotron Resonance with Permanent Magnets", 29th International Symposium on Space Technology and Science (ISTS 2013), June 2-9, 2013, Nagoya Congress Center, Nagoya, Aichi, Japan, s-43-b, Proc. 29th ISTS, 2013, pp. 2013-s-43-b.
  • [Invited] K. Eriguchi: " Modeling as a powerful tool for understanding surface damage during plasma processing of materials", Plasma Etch and Strip in Microtechnology (PESM), Leuven, Belgium, March 15, 2013. (invited)
  • [Invited] Hirotaka Tsuda(D), Nobuya Nakazaki, Daisuke Fukushima, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Surface roughening during Si etching in inductively coupled Cl2 plasmas: Experimental investigations and a comparison with numerical simulations", The 6th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2013), Feburary 2-3, 2013, Gero Synergy Center, Gero, Gifu, Japan, S-1. IC-PLANTS 2013 The 6th International Conference on Plasma-Nanotechnology & Science, 2013, pp. S-01.

2012

  • Asahiko Matsuda(D), Yoshinori Nakakubo, M. Fukasawa, Yoshinori Takao, T. Tatsumi, Koji Eriguchi, and Kouichi Ono: "Three-Dimensional Parameter Mapping of Annealing Process for HBr/O2-Plasma-Induced Damages in Si Substrates", 34th International Symposium on Dry Process (DPS 2012), November 15-16, 2012, Takeda Hall, Takeda Sentanchi Building, The University of Tokyo, Tokyo, Japan, H-2, Proc. 34th Int. Symp. Dry Process, p. 181.
  • Nobuya Nakazaki(M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Surface Structure and Etch Products in Si/Cl and Si/Br Systems", 34th International Symposium on Dry Process (DPS 2012), November 15-16, 2012, Takeda Hall, Takeda Sentanchi Building, The University of Tokyo, Tokyo, Japan, P-33, Proc. 34th Int. Symp. Dry Process, p. 91.
  • Hirotaka Tsuda(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Modeling and Simulation of Nanoscale Surface Roughness during Plasma Etching of Si: Mechanism and Reduction", 34th International Symposium on Dry Process (DPS 2012), November 15-16, 2012, Takeda Hall, Takeda Sentanchi Building, The University of Tokyo, Tokyo, Japan, A-3, Proc. 34th Int. Symp. Dry Process, p. 7.
  • Hirotaka Tsuda(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Formation Mechanisms of Nanoscale Surface Roughness and Rippling during Plasma Etching and Sputtering of Si under Oblique Ion Incidence", AVS 59th International Symposium & Exhibition, October 28-November 2, 2012, Tampa Convention Center, Florida, USA, PS2-TuA12
  • Nobuya Nakazaki(M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Si Etching with Cl and Br Beams: Ion Incident Angle and Neutral Radical Flux Dependence", AVS 59th International Symposium & Exhibition, October 28-November 2, 2012, Tampa Convention Center, Florida, USA, PS2-TuA10
  • Hirotaka Tsuda(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Formation Mechanisms of Surface Roughening and Rippling during Plasma Etching and Sputtering of Silicon", The 65th Annual Gaseous Electronics Conference (GEC), October 22-26, 2012, the AT&T Conference Center on The University of Texas at Austin campus in Austin, Texas, USA, HW2-2, Bull. Am. Phys. Soc. 57(8) p. 45.
  • Nobuya Nakazaki(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Physical and Chemical Behavior of Etch Products Desorbed during Si Etching in Cl- and Br-based Plasmas", The 65th Annual Gaseous Electronics Conference (GEC), October 22-26, 2012, the AT&T Conference Center on The University of Texas at Austin campus in Austin, Texas, USA, HW2-5, Bull. Am. Phys. Soc. 57(8) p. 46.
  • Daisuke Mori(M), Tetsuo Kawanabe, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thrusters Using Surface Wave and Electron Cyclotron Resonance Discharges", The 65th Annual Gaseous Electronics Conference (GEC), October 22-26, 2012, the AT&T Conference Center on The University of Texas at Austin campus in Austin, Texas, USA, CT4-5, Bull. Am. Phys. Soc. 57(8) p. 22.
  • Yoshinori Takao, Masataka Sakamoto, Koji Eriguchi, and Kouichi Ono: "Particle simulation of a micro inductively coupled plasma source including an external circuit", The 65th Annual Gaseous Electronics Conference (GEC), October 22-26, 2012, the AT&T Conference Center on The University of Texas at Austin campus in Austin, Texas, USA, PR1-31, Bull. Am. Phys. Soc. 57(8) p. 77.
  • [Invited] K. Eriguchi: "High-k MOSFET performance degradation by plasma process-induced charging damage", IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, USA, Oct. 14, 2012.
  • [Tutorial Lecture] Kouichi Ono: "Plasma Etching for Nanofabrication: Fundamentals, Current Status, and Future Prospects", The 11th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 25th Symposium on Plasma Science for Materials (SPSM), October 2-5, 2012, Kyoto University ROHM Plaza, Kyoto, Japan, Tutorial 1. Abstracts and Slides for Lecture, pp.1-20.
  • Daisuke Mori(M), Tetsuo Kawanabe, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thrusters: Surface Wave-Excited Type and Electron Cyclotron Resonance-Excited Type", The 11th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 25th Symposium on Plasma Science for Materials (SPSM), October 2-5, 2012, Kyoto University ROHM Plaza, Kyoto, Japan, 1-P25. Abstracts, p.143.
  • Hirotaka Tsuda(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Rippling Mechanism of Nanoscale Surface during Plasma Etching of Si under Oblique Ion Incidence", The 11th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 25th Symposium on Plasma Science for Materials (SPSM), October 2-5, 2012, Kyoto University ROHM Plaza, Kyoto, Japan, 1-P60. Abstracts, p.176.
  • Nobuya Nakazaki(M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Si Etching in Cl- and Br-based Plasmas", The 11th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 25th Symposium on Plasma Science for Materials (SPSM), October 2-5, 2012, Kyoto University ROHM Plaza, Kyoto, Japan, 2-P28. Abstracts, p.266.
  • Junya Suzuki(M), Tomoki Hazama, Tetsuo Kawanabe, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Characterization of Linear and Annular Dielectric Barrier Discharge Plasma", The 11th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 25th Symposium on Plasma Science for Materials (SPSM), October 2-5, 2012, Kyoto University ROHM Plaza, Kyoto, Japan, 3-P117. Abstracts, p.473.
  • [Invited] Kouichi Ono: "Surface Roughening and Rippling during Plasma Etching", International Union of Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), September 23-28, 2012, PACIFICO YOKOHAMA, Yokohama, Japan, D-4-I25-002.
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Miniature Ion Thruster using a Cylindrical Micro ICP", 48th AIAA/ASME/SAE/ASEE Joint Propulsion Conference & Exhibit (JPC), July 29 - August 1, 2012, Atlanta, GA, USA, AIAA-2012-3950.
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Optimization Problems for Plasma-Induced Damage: A Concept for Plasma-Induced Damage Design", 2012 IEEE International Conference on IC Design & Technology (ICICDT), May 30-June 1, 2012, Austin, TX, USA.
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Unifed Model-Prediction Framework for MOSFET Performance Degradation by Plasma-Induced Si Damage and its Application to Process Parameter Optimization", Plasma Etch and Strip in Microelectronics, March 15–16, 2012, Minatec, Grenoble, France.
  • Asahiko Matsuda(D), Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Optical Characterization of Plasma-Induced Si Damage by Ar and Cl2 Inductively Coupled Plasmas", Plasma Etch and Strip in Microelectronics, March 15–16, 2012, Minatec, Grenoble, France.
  • [Invited] Hirotaka Tsuda(D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Model Analysis of Nanoscale Surface Roughness and Rippling during Plasma Etching of Si under Oblique Ion Incidence: Effects of Oxygen Addition", The 5th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2012), March 9-10, 2012, Freude, Inuyama International Sightseeing Center, Aichi, Japan, S-2. IC-PLANTS 2012 The 5th International Conference on Plasma-Nanotechnology & Science, 2012, pp. S-02.
  • Nobuya Nakazaki(M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Si Etching with Cl beams: Ion Incident Angle and Neutral Radical Flux Dependence" , The 5th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2012), March 9-10, 2012, Freude, Inuyama International Sightseeing Center, Aichi, Japan, S-2. IC-PLANTS 2012 The 5th International Conference on Plasma-Nanotechnology & Science, 2012, pp. P-36.

2011

  • Hiroki Miyata (M), Hirotaka Tsuda, Daisuke Fukushima, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Fourier Transofrm Infrared Absorption Spectroscopy of Gas-Phase and Surface Reaction Products during Si Etching in Inductively Coupled Cl2 Plasmas", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, NR1-10, Bull. Am. Phys. Soc. 56(15) p. 64.
  • Nobuya Nakazaki (M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependences of Si etching with Cl, Br, and HBr beams", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, NR1-11, Bull. Am. Phys. Soc. 56(15) p. 64.
  • Kenji Matsuoka (M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle-in-cell/Monte Carlo simulation of capacitively coupled chlorine plasmas", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, TF2-3, Bull. Am. Phys. Soc. 56(15) p. 94.
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical analysis of inductive and capacitive coupling in radio-frequency micro discharges", 64th Annual Gaseous Electronics Conference, November 15–18, 2011, Salt Palace Convention Center, Salt Lake City, Utah, USA, FTP1-00043, Bull. Am. Phys. Soc. 56(15) p. 36.
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, B-2, Proc. 33rd Int. Symp. Dry Process, p. 15.
  • Kenji Matsuoka (M), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of Capacitively Coupled Chlorine Plasma Using Two-dimensional Particle-in-cell/Monte Carlo Method", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, P1-13, Proc. 33rd Int. Symp. Dry Process, p. 47.
  • Nobuya Nakazaki (M), Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependence of Si etching with Cl, Br, and HBr beams", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, P1-16, Proc. 33rd Int. Symp. Dry Process, p. 53.
  • Asahiko Matsuda (D), Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate", 33rd International Symposium on Dry Process (DPS 2011), November 10-11, 2011, Kyoto Garden Palace Hotel, Kyoto, Japan, E-2, Proc. 33rd Int. Symp. Dry Process, p. 159.
  • Asahiko Matsuda (D), Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Improvement in the Evaluation Technique for Plasma-Etch Si Damage using Photoreflectance Spectroscopy with Temperature Control", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-ThM9.
  • Yoshinori Nakakubo (D), Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Effect of Rapid Thermal Annealing on Si Surface Damage by HBr/O2- and H2-Plasma", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-ThM12.
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Three-Dimensional Modeling and Formation Mechanisms of Atomic-Scale Surface Roughness during Si Etching in Chlorine-Based Plasmas", AVS 58th International Symposium & Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, TN, USA, PS-FrM9.
  • Tetsuo Kawanabe (M), Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-excited Microplasma Thruster with Applied Magnetic Field", 32nd International Electric Propulsion Conference, September 11–15, 2011, Kurhaus, Wiesbaden, Germany, IEPC-2011-262
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Two-Dimensional Particle-in-Cell Simulation of a Micro RF Ion Thruster", 32nd International Electric Propulsion Conference, September 11–15, 2011, Kurhaus, Wiesbaden, Germany, IEPC-2011-076
  • [Invited] K. Eriguchi: "Modeling of Parameter Fluctuation Induced by Plasma Process Damage in Metal–Oxide–Semiconductor Field-Effect Transistors", 19th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Daejeon, Korea, Jun. 29, 2011, pp. 1-4.
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution”, 4th International Conference on Plasma Nano-Technology & Science (IC-PLANTS 2011), March 10-12, 2011, Takayama Public Cultural Hall, Takayama, Gifu, Japan, Paper O-07, Proceedings, O-07.
  • Hirotaka Tsuda (D), Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Surface Roughness Formation during Si Etching in Chlorine-based Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution”, 2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (2WPNI), March 1-4, Hotel Raj, Cerklje, Slovenia, March 2011, Proceedings, pp.41-42.

2010

2009

  • Hirotaka Tsuda (M), Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Fully Atomistic Profile Evolution Simulation of Nanometer-scale Si Trench Etching by Energetic F, Cl, and Br Beams", AVS 56th International Symposium & Exhibition (Plasma Science and Technology), November 8-13, 2009, San Jose Convention Center, San Jose, CA, USA, PS1-ThA8.
  • Yoshinori Takao, Takeshi Takahashi, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Optical Measurement of a Microwave-excited Miniature Plasma Source for Micro Propulsion", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, FT2.00001. Bull. Am. Phys. Soc. 54(12), 2009, p. 18.
  • Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle Simulation of a Micro ICP Plasma Source for Miniature Ion Thruster", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, KTP.00097. Bull. Am. Phys. Soc. 54(12), 2009, p. 50.
  • Hirotaka Tsuda (M), Tatsuya Nagaoka, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Plasma-surface interactions during Si etching in Cl- and Br-based plasmas: An empirical and atomistic study", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, SR3.00004. Bull. Am. Phys. Soc. 54(12), 2009, p. 70.
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-24. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 338-339.
  • Asahiko Matsuda (M), Yoshinori Nakakubo, Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-28. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 346-347.
  • Hirotaka Tsuda (M), Masahito Mori, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 2-P19. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 45-46.
  • Yoshinori Nakakubo (D), Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 3-3. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 125-126.
  • Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 9-4. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268.
  • Takeshi Takahashi (D), Shunsuke Kitanishi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design Improvement for Implemantation to Satellite", 31st International Electric Propulsion Conference (IEPC 2009), September 20-24, 2009, University of Michigan, Ann Arbor, MI, USA, IEPC-2009-190.
  • Takeshi Takahashi (D), Yugo Ichida, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight", 27th International Symposium on Space Technology and Science (ISTS 2009), July 5-12, 2009, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, b-21.
  • Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 101-104.
  • Asahiko Matsuda (M), Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 97-100.


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