2010年7月30日 (金) 11:18時点における版

国際会議発表一覧 （過去3年間）

2010

• Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-scale analysis of plasma-surface interactions and feature profile evolution during Si etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches", The 10th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 23th Symposium on Plasma Science for Materials (SPSM), July 8, 2010, Lotte Hotel Jeju, Jeju, Korea, 2010-401 (PP442).
• Hirotaka Tsuda, Tatsuya Nagaoka, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-scale analysis of plasma-surface interactions and feature profile evolution by molecular dynamics approaches", The 3rd International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2010), March 11-12, 2010, Meijyo University, Nagoya, Japan, P-22. IC-PLANTS 2010 The 3rd International Conference on Plasma-Nanotechnology & Science, 2010, pp. P-22.
• Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Profile simulation of silicon etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches", The 1st International Workshop on Plasma Nano-interfaces, January 10, 2010, Nagasaki University, Nagasaki, Japan, FS06.

2009

• Hirotaka Tsuda, Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Fully Atomistic Profile Evolution Simulation of Nanometer-scale Si Trench Etching by Energetic F, Cl, and Br Beams", AVS 56th International Symposium & Exhibition (Plasma Science and Technology), November 8-13, 2009, San Jose Convention Center, San Jose, CA, USA, PS1-ThA8.
• Yoshinori Takao, Takeshi Takahashi, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Optical Measurement of a Microwave-excited Miniature Plasma Source for Micro Propulsion", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, FT2.00001. Bull. Am. Phys. Soc. 54(12), 2009, p. 18.
• Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle Simulation of a Micro ICP Plasma Source for Miniature Ion Thruster", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, KTP.00097. Bull. Am. Phys. Soc. 54(12), 2009, p. 50.
• Hirotaka Tsuda, Tatsuya Nagaoka, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Plasma-surface interactions during Si etching in Cl- and Br-based plasmas: An empirical and atomistic study", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, SR3.00004. Bull. Am. Phys. Soc. 54(12), 2009, p. 70.
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-24. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 338-339.
• Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-28. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 346-347.
• Hirotaka Tsuda, Masahito Mori, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 2-P19. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 45-46.
• Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of H₂ Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 3-3. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 125-126.
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 9-4. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268.
• Takeshi Takahashi, Shunsuke Kitanishi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design Improvement for Implemantation to Satellite", 31st International Electric Propulsion Conference (IEPC 2009), September 20-24, 2009, University of Michigan, Ann Arbor, MI, USA, IEPC-2009-190.
• Takeshi Takahashi, Yugo Ichida, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight", 27th International Symposium on Space Technology and Science (ISTS 2009), July 5-12, 2009, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, b-21.
• Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 101-104.
• Asahiko Matsuda, Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 97-100.

2008

• Takumi Saegusa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Heat conduction in naked, H-terminated, and native-oxide-coated Si nanowires", 2008 Material Research Society (MRS) Fall Meeting, December 1-5, 2008, Boston, MA, USA, LL4.18.
• K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, K. Ishikawa, M. Yoshimaru, and K. Ono: "A New Framework for Performance Prediction of Advanced MOSFETs with Plasma-Induced Recess Structure and Latent Defect Site", IEEE International Electron Devices Meeting (IEDM), 2008, December 15-17, 2008, San Francisco, CA, USA. 2008 IEDM Technical Digest, 2008, pp. 1-4.
• H. Fukumoto, H. Ohta, K. Eriguchi, and K. Ono: "Effects of Etching-Mask Geometry and Charging on Etching Profile Evolution", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP24.
• H. Ohta, T. Nagaoka, K. Eriguchi, and K. Ono: "A Novel Interatomic Potential Model for MD Simulation of Si Etching by Cl⁺/B⁺ Containing Plasmas", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP20.
• T. Nagaoka, H. Ohta, K. Eriguchi, and K. Ono: "Molecular Dynamics Simulation of Si Etching by Monoenergetic Br⁺, Br₂⁺, H⁺, and HBr⁺ Ions Generated in HBr Plasmas", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS-TuP19 .
• Y. Nakakubo, A. Matsuda, Y. Ueda, H. Ohta, K. Eriguchi, and K. Ono: "Clarification of Surface and Interface Structures exposed to Inductively Coupled Plasma with Various Superposed Bias Frequencies and Its Implication in Plasma Damage Control", AVS 55th International Symposium & Exhibition, October 19-24, 2008, Boston, MA, USA, PS1-WeM4 .
• Yoshinori Ueda, Keisuke Nakamura, Hiroaki Kiyokami, Hiroaki Ohta, Koji Eriguchi, Kouichi Ono: "Threshold energy for plasma etching of high-k dielectric HfO₂ films in BCl₃-containing plasmas", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, TX, USA, XF1.00002. Bull. Am. Phys. Soc. 53(10), 2008, p. 94.
• H. Ohta, T. Nagaoka, A. Iwakawa, K. Eriguchi, K. Ono: "Quantitative improvement in MD-based plasma etching simulator: Si etching by halogen-including plasmas", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, WF3.00003. Bull. Am. Phys. Soc. 53(10), 2008, p. 92.
• Hirotaka Tsuda, Shoki Irie, Masahito Mori, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching in chlorine- and bromine-containing plasmas: Effects of surface oxidation on evolution of feature profiles", 61st Annual Gaseous Electronics Conference (GEC), October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, DT1.00003 . Bull. Am. Phys. Soc. 53(10), 2008, p. 18.
• Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Ueda, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-13. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 358-359.
• Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale simulation of Si etching by energetic Br⁺ and Br₂⁺ ions for the analysis of Gate- or STI-etching processes", 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-1. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008, pp. 334-335.
• H. Ohta, A. Iwakawa, K. Eriguchi, and K. Ono: "Atomic-scale Simulation of Silicon Etching by Bromine-containing Plasmas", 26th International Rarefied Gas Dynamics Symposium (RGD26), July 21-25, 2008, Kyoto University, Kyoto, Japan, 25-1-B.
• Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, K. Eriguchi and K. Ono: "Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 101-104.
• K. Eriguchi, M. Kamei, K. Okada, H. Ohta and K. Ono: "Threshold Voltage Shift Instability Induced by Plasma Charging Damage in MOSFETs with High-k Dielectric", International Conference on IC Design and Technology (ICICDT 2008), June 2-4, 2008, Minatec in Grenoble, France, session C2. Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology, 2008, pp. 97-100.
• Yugo Ichida, Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant", 26th International Symposium on Space Technology and Science (ISTS 2008), June 2-8, 2008, Act City Hamamatsu, Japan, b-20. ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science, 2008, .
• Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Numerical Simulation of a Microwave-Excited Microplasma Thruster", 26th International Symposium on Space Technology and Science (ISTS 2008), June 2-8, 2008, Act City Hamamatsu, Japan, b-17. ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science, 2008, .

2007

• M. Mori, S. Irie, N. Itabashi, K. Eriguchi, K. Ono: "A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 7-8.
• Y. Ueda, K. Nakamura, D. Hamada, M. Yoshida, K. Eriguchi, K. Ono: "Selective etching of high-k dielectric HfO₂ films in BCl₃-containing plasmas without rf biasing", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 283-284.
• Y. Nakakubo, Y. Ueda, M. Yoshida, D. Hamada, M. Kamei, K. Eriguchi, K. Ono: "Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies", 29th International Symposium on Dry Process (DPS 2007), November 13-14, 2007, Tokyo International Exchange Center, Plaza Heisei, Aomi, Koto-ku, Tokyo, Japan. pp. 287-288.
• D. Hamada, K. Nakamura, Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Comparative Study of ECR and ICP Plasma Etching of High-k Dielectric HfO₂ Films with BCl₃-Containing Gas Chemistries", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA8.
• M. Kamei, K. Eriguchi, H. Fukumoto, K. Ono: "Plasma source-dependent charging damage polarities in the performance degradation of MOSFETs with Hf-based high-k gate dielectrics", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-MoA10.
• K. Eriguchi, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Ions and Si Surface Interactions - Estimation of Plasma-Induced Defect Generation Probability", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS2-WeM5.
• H. Fukumoto, K. Eriguchi, K. Ono: "Geometrical Effects on Etching Profile Evolution", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS1-ThM6.
• S. Irie, M. Mori, N. Itabashi, K. Eriguchi, K. Ono: "Model Analysis of the Ion Reflection on Surfaces and the Profile Evolution during Etching of Si in Chlorine-and Bromine-Containing Plasmas", AVS 54th International Symposium & Exhibition, October 14-19, 2007, Washington State Convention Center, Seattle, WA, USA, PS-FrM9.
• Kouichi Ono: "Microwave-Excited Microplasma Thruster: A Numerical and Experimental Study of the Plasma Generation and Micronozzle Flow" (Invited), 4th International Workshop on Microplasmas 2007, October 28-31, 2007, Tainan City, Taiwan, FO-004.
• S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Atomic-scale model analysis of the feature profile evoltion during Si etching in chlorine- and bromine-containing plasmas", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 17.
• Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono: "Analysis of plasma-surface interactions during plasma etching by in-situ diagnostics of reactants and reaction products", 60th Gaseous Electronics Conference (GEC07), October 2-5, 2007, Arlington, VA, USA. Bull. Am. Phys. Soc. Vol. 52 No. 8, p. 19.
• K. Eriguchi, M. Kamei, D. Hamada, K. Okada, K. Ono: "A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO₂ Gate Dielectrics", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, A-6-3. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
• K. Eriguchi, A. Ohno, D. Hamada, M. Kamei, H. Fukumoto, K. Ono: "Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers", International Conference on Solid State Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-17. Ext. Abs. 2007 Int. Conf. on Solid State Devices and Materials, .
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical Analysis and Experiments of a Microwave-excited Microplasma Thruster", 30th International Electric Propulsion Conference, September 17-20, 2007, Florence, Italy, IEPC-2007-29.
• Kouichi Ono: "Micro plasma thruster for ultra small satellites: Plasma chemical and aerodynamical aspects" (Invited), 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 29C-a1.
• S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono: "Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-25.
• D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-26.
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 28P-123.
• H. Fukumoto, K. Eriguchi, K. Ono: "Effects of geometrically different microstructures on etching profiles", 18th International Symposium on Plasma Chemistry (ISPC-18), August 26-31, 2007, Kyoto, Japan, 30C-p6.
• Kouichi Ono: "Plasma Etching" (Invited), IUPAC Summer School on Plasma Chemistry for Materials Processing, August 23-25, 2007, Kyoto, Japan. IUPAC Summer School on Plasma Chemistry for Materials Processing Lecture Notes, pp. 123-145.
• M. Kamei, K. Eriguchi, K. Okada, K. Ono: "Investigation of Junction Characteristics of MOSFETs with High-k Gate Stack by Plasma Processing", International Conference on IC Design and Technology (ICICDT 2007), May 30-June 1, 2007, Austin, TX, USA. Proc. of 2007 Int. Conf. Integrated Circuit Design and Technology, pp. 117-120.
• S. Irie, Y. Osano, M. Nori, K. Eriguchi, K. Ono: "Atomic-scale Model for Feature Profile Evolution during Chlorine- and Bromine-Containing Plasma Etching of Si ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-4. p. 13.
• D. Hamada, K. Nakamura, K. Eriguchi, K. Ono: "Etching of High-k Dielectric HfO₂ in BCl₃-Containing Plasmas without RF Biasing ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-5. p. 14.
• T. Takahashi, Y. Takao, K. Eriguchi, K. Ono: "Microwave-Excited Micro Plasma Thruster ", Workshop on Micro- and Nano-Engineering for Aerospace Systems, March 6, 2007, Kyoto, Japan, P-6. p. 15.