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京大推進研

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2011年6月27日 (月) 16:33時点における版

国際会議発表一覧 （過去3年間）

(Showing presentations in the last 3 years)

2011

Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution”, 4th International Conference on Plasma Nano-Technology & Science (IC-PLANTS 2011), March 10-12, 2011, Takayama Public Cultural Hall, Takayama, Gifu, Japan, Paper O-07, Proceedings, O-07.
Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: “Surface Roughness Formation during Si Etching in Chlorine-based Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution”, 2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (2WPNI), March 1-4, Hotel Raj, Cerklje, Slovenia, March 2011, Proceedings, pp.41-42.

2010

Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites", 32nd International Symposium on Dry Process (DPS 2010), November 11-12, 2010, Tokyo Institute of Technology, Japan, P2-J2, Proc. 32nd Int. Symp. Dry Process, p. 173.
Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Molecular Dynamics Analysis of Surface Roughness during Si Etching in Chlorine-Based Plasmas", 32nd International Symposium on Dry Process (DPS 2010), November 11-12, 2010, Tokyo Institute of Technology, Japan, H-2, Proc. 32nd Int. Symp. Dry Process, p. 179.
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono: "Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar MOSFETs and the Optimization Strategies", 32nd International Symposium on Dry Process (DPS 2010), November 11-12, 2010, Tokyo Institute of Technology, Japan, J-1, Proc. 32nd Int. Symp. Dry Process, p. 185.
Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Comparative Study of Plasma-Charging Damage in High-k Dielectric and p-n Junction and their Effects on Off-State Leakage Current of MOSFETs", 32nd International Symposium on Dry Process (DPS 2010), November 11-12, 2010, Tokyo Institute of Technology, Japan, J-3, Proc. 32nd Int. Symp. Dry Process, p. 189.
Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy", 32nd International Symposium on Dry Process (DPS 2010), November 11-12, 2010, Tokyo Institute of Technology, Japan, J-4, Proc. 32nd Int. Symp. Dry Process, p. 191.
[Invited] Kouichi Ono: "Plasma-surface interactions in plasma etching processes for nanometer-scale microelectronic devices", 63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP), October 4-8, 2010, Maison de la Chimie, Paris, France, QR2.00001. Bull. Am. Phys. Soc. 55(7), 2010, p. 153.
Hirotaka Tsuda, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "3-dimentional atomics-scale cellular model and feature profile evolution during Si etching in chlorine-based plasmas: Analysis of profile anomalies and surface roughness", 63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP), October 4-8, 2010, Maison de la Chimie, Paris, France, KWP.00063. Bull. Am. Phys. Soc. 55(7), 2010, p. 119.
Koji Eriguchi, Yoshinori Takao, and Kouichi Ono: "A Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching", 63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP), October 4-8, 2010, Maison de la Chimie, Paris, France, KWP.00054. Bull. Am. Phys. Soc. 55(7), 2010, p. 118.
Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "11-GHz Microwave-Excited Microplasma Source for Electrothermal Thruster", 63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP), October 4-8, 2010, Maison de la Chimie, Paris, France, DTP.00228. Bull. Am. Phys. Soc. 55(7), 2010, p. 97.
Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "Particle Simulations of Sheath Dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges", 63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP), October 4-8, 2010, Maison de la Chimie, Paris, France, CTP.00024. Bull. Am. Phys. Soc. 55(7), 2010, p. 20.
Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Simulation of Microwave-Excited Microplasma Thruster with Helium Propellant", 61st International Astronautical Congress (IAC), September 27-October 1, 2010, Kongresove centrum Praha, Prague, Czech Republic, IAC-10.C4.4.13.
Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Numerical Analysis of a Micro Ion Thruster Using PIC/MCC Model", 46th AIAA/ASME/SAE/ASEE Joint Propulsion Conference & Exhibit (JPC), July 25-28, 2010, Nashville, TN, USA, AIAA-2010-6947.
Yoshinori Takao, Kenji Matsuoka, Koji Eriguchi, and Kouichi Ono: "PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching", 27th International Symposium on Rarefied Gas Dynamics (RGD), July 10-15, 2010, Asilomar Conference Grounds, Pacific Grove, California, USA, 2010-296.
Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-scale analysis of plasma-surface interactions and feature profile evolution during Si etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches", The 10th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 23th Symposium on Plasma Science for Materials (SPSM), July 8, 2010, Lotte Hotel Jeju, Jeju, Korea, 2010-401 (PP442).
[Invited] Kouichi Ono: "Plasma-surface interactions in plasma etching of high-k dielectrics and metal electrode matrials", The 10th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 23th Symposium on Plasma Science for Materials (SPSM), July 5, 2010, Lotte Hotel Jeju, Jeju, Korea, 2010-558 (ICA-05).
Hirotaka Tsuda, Tatsuya Nagaoka, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Atomic-scale analysis of plasma-surface interactions and feature profile evolution by molecular dynamics approaches", The 3rd International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 2010), March 11-12, 2010, Meijyo University, Nagoya, Japan, P-22. IC-PLANTS 2010 The 3rd International Conference on Plasma-Nanotechnology & Science, 2010, pp. P-22.
Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Profile simulation of silicon etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches", The 1st International Workshop on Plasma Nano-interfaces, January 10, 2010, Nagasaki University, Nagasaki, Japan, FS06.

2009

Hirotaka Tsuda, Tatsuya Nagaoka, Koji Eriguchi, Kouichi Ono, and Hiroaki Ohta: "Fully Atomistic Profile Evolution Simulation of Nanometer-scale Si Trench Etching by Energetic F, Cl, and Br Beams", AVS 56th International Symposium & Exhibition (Plasma Science and Technology), November 8-13, 2009, San Jose Convention Center, San Jose, CA, USA, PS1-ThA8.
Yoshinori Takao, Takeshi Takahashi, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Optical Measurement of a Microwave-excited Miniature Plasma Source for Micro Propulsion", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, FT2.00001. Bull. Am. Phys. Soc. 54(12), 2009, p. 18.
Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Particle Simulation of a Micro ICP Plasma Source for Miniature Ion Thruster", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, KTP.00097. Bull. Am. Phys. Soc. 54(12), 2009, p. 50.
Hirotaka Tsuda, Tatsuya Nagaoka, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Plasma-surface interactions during Si etching in Cl- and Br-based plasmas: An empirical and atomistic study", 62nd Annual Gaseous Electronics Conference (2009 GEC), October 20-23, 2009, Saratoga Springs, NY, USA, SR3.00004. Bull. Am. Phys. Soc. 54(12), 2009, p. 70.
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-24. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 338-339.
Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Miyagi, Japan, P-1-28. Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009, pp. 346-347.
Hirotaka Tsuda, Masahito Mori, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 2-P19. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 45-46.
Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa, Yoshinori Takao, Tetsuya Tatsumi, Koji Eriguchi, and Kouichi Ono: "Optical and Electrical Characterization of H₂ Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 3-3. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 125-126.
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono: "Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs", 31st International Symposium on Dry Process (DPS 2009), September 24-25, 2009, Busan Exhibition & Convention Center, Busan, Korea, 9-4. Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268.
Takeshi Takahashi, Shunsuke Kitanishi, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design Improvement for Implemantation to Satellite", 31st International Electric Propulsion Conference (IEPC 2009), September 20-24, 2009, University of Michigan, Ann Arbor, MI, USA, IEPC-2009-190.
Takeshi Takahashi, Yugo Ichida, Shunsuke Kitanishi, Koji Eriguchi, and Kouichi Ono: "Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight", 27th International Symposium on Space Technology and Science (ISTS 2009), July 5-12, 2009, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, b-21.
Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 101-104.
Asahiko Matsuda, Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", International Conference on IC Design and Technology (ICICDT 2009), May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology, 2009, pp. 97-100.

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 * Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Masayuki Kamei, Hiroaki Ohta, and Kouichi Ono: "Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs", [http://www.icicdt.org/ International Conference on IC Design and Technology (ICICDT 2009)], May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. ''Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology'', 2009, pp. 101-104.
 * Asahiko Matsuda, Yoshinori Nakakubo, Riki Ogino, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis", [http://www.icicdt.org/ International Conference on IC Design and Technology (ICICDT 2009)], May 18-20, 2009, Freescale Semiconductor, Austin, TX, USA, Session E. ''Proceedings 2009 IEEE International Conference on Integrated Circuit Design and Technology'', 2009, pp. 97-100.
-===2008===
-* Takumi Saegusa, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Heat conduction in naked, H-terminated, and native-oxide-coated Si nanowires", 2008 Material Research Society (MRS) Fall Meeting, December 1-5, 2008, Boston, MA, USA, LL4.18.
-* K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, K. Ishikawa, M. Yoshimaru, and K. Ono: "A New Framework for Performance Prediction of Advanced MOSFETs with Plasma-Induced Recess Structure and Latent Defect Site", [http://ieeexplore.ieee.org/servlet/opac?punumber=4786613 IEEE International Electron Devices Meeting (IEDM), 2008], December 15-17, 2008, San Francisco, CA, USA. ''2008 IEDM Technical Digest'', 2008, pp. 1-4.
-* H. Fukumoto, H. Ohta, K. Eriguchi, and K. Ono: "Effects of Etching-Mask Geometry and Charging on Etching Profile Evolution", [http://www2.avs.org/symposium/AVS55/pages/info.html AVS 55th International Symposium & Exhibition], October 19-24, 2008, Boston, MA, USA, PS-TuP24.
-* H. Ohta, T. Nagaoka, K. Eriguchi, and K. Ono: "A Novel Interatomic Potential Model for MD Simulation of Si Etching by Cl<sup>+</sup>/B<sup>+</sup> Containing Plasmas", [http://www2.avs.org/symposium/AVS55/pages/info.html AVS 55th International Symposium & Exhibition], October 19-24, 2008, Boston, MA, USA, PS-TuP20.
-* T. Nagaoka, H. Ohta, K. Eriguchi, and K. Ono: "Molecular Dynamics Simulation of Si Etching by Monoenergetic Br<sup>+</sup>, Br<sub>2</sub><sup>+</sup>, H<sup>+</sup>, and HBr<sup>+</sup> Ions Generated in HBr Plasmas", [http://www2.avs.org/symposium/AVS55/pages/info.html AVS 55th International Symposium & Exhibition], October 19-24, 2008, Boston, MA, USA, PS-TuP19 .
-* Y. Nakakubo, A. Matsuda, Y. Ueda, H. Ohta, K. Eriguchi, and K. Ono: "Clarification of Surface and Interface Structures exposed to Inductively Coupled Plasma with Various Superposed Bias Frequencies and Its Implication in Plasma Damage Control", [http://www2.avs.org/symposium/AVS55/pages/info.html AVS 55th International Symposium & Exhibition], October 19-24, 2008, Boston, MA, USA, PS1-WeM4 .
-* Yoshinori Ueda, Keisuke Nakamura, Hiroaki Kiyokami, Hiroaki Ohta, Koji Eriguchi, Kouichi Ono: "Threshold energy for plasma etching of high-''k'' dielectric HfO<sub>2</sub> films in BCl<sub>3</sub>-containing plasmas", [http://meetings.aps.org/Meeting/GEC06/ 61st Annual Gaseous Electronics Conference (GEC)], October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, TX, USA, XF1.00002. Bull. Am. Phys. Soc. '''53'''(10), 2008, p. 94.
-* H. Ohta, T. Nagaoka, A. Iwakawa, K. Eriguchi, K. Ono: "Quantitative improvement in MD-based plasma etching simulator: Si etching by halogen-including plasmas", [http://meetings.aps.org/Meeting/GEC06/ 61st Annual Gaseous Electronics Conference (GEC)], October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, WF3.00003. Bull. Am. Phys. Soc. '''53'''(10), 2008, p. 92.
-* Hirotaka Tsuda, Shoki Irie, Masahito Mori, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale cellular model and profile simulation of Si etching in chlorine- and bromine-containing plasmas: Effects of surface oxidation on evolution of feature profiles", [http://meetings.aps.org/Meeting/GEC06/ 61st Annual Gaseous Electronics Conference (GEC)], October 13-17, 2008, Marriott Dallas/Addison Quorum by the Galleria in Dallas, Texas, USA, DT1.00003 . Bull. Am. Phys. Soc. '''53'''(10), 2008, p. 18.
-* Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Ueda, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis", [http://www.ssdm.jp/2008/ 2008 International Conference on Solid State Devices and Materials (SSDM 2008)], September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-13. ''Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials'', 2008, pp. 358-359.
-* Tatsuya Nagaoka, Hiroaki Ohta, Koji Eriguchi, and Kouichi Ono: "Atomic-scale simulation of Si etching by energetic Br<sup>+</sup> and Br<sub>2</sub><sup>+</sup> ions for the analysis of Gate- or STI-etching processes", [http://www.ssdm.jp/2008/ 2008 International Conference on Solid State Devices and Materials (SSDM 2008)], September 23-26, 2008, Tsukuba International Congress Center (Epochal Tsukuba), Ibaraki, Japan, P-1-1. ''Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials'', 2008, pp. 334-335.
-* H. Ohta, A. Iwakawa, K. Eriguchi, and K. Ono: "Atomic-scale Simulation of Silicon Etching by Bromine-containing Plasmas", [http://gd.isas.jaxa.jp/RGD26/ 26th International Rarefied Gas Dynamics Symposium (RGD26)], July 21-25, 2008, Kyoto University, Kyoto, Japan, 25-1-B.
-* Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, K. Eriguchi and K. Ono: "Analysis of Si Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies", [http://www.icicdt.org/ International Conference on IC Design and Technology (ICICDT 2008)], June 2-4, 2008, Minatec in Grenoble, France, session C2. ''Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology'', 2008, pp. 101-104.
-* K. Eriguchi, M. Kamei, K. Okada, H. Ohta and K. Ono: "Threshold Voltage Shift Instability Induced by Plasma Charging Damage in MOSFETs with High-''k'' Dielectric", [http://www.icicdt.org/ International Conference on IC Design and Technology (ICICDT 2008)], June 2-4, 2008, Minatec in Grenoble, France, session C2. ''Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology'', 2008, pp. 97-100.
-* Yugo Ichida, Takeshi Takahashi, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant", [http://www.ists.or.jp/2008/ 26th International Symposium on Space Technology and Science (ISTS 2008)], June 2-8, 2008, Act City Hamamatsu, Japan, b-20. ''ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science'', 2008, .
-* Takeshi Takahashi, Yugo Ichida, Yoshinori Takao, Koji Eriguchi, Kouichi Ono : "Numerical Simulation of a Microwave-Excited Microplasma Thruster", [http://www.ists.or.jp/2008/ 26th International Symposium on Space Technology and Science (ISTS 2008)], June 2-8, 2008, Act City Hamamatsu, Japan, b-17. ''ISTS Paper Archives on Web and On-Site CD-ROM of 26th International Symposium on Space Technology & Science'', 2008, .
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